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PD-97292A
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) IRHLYS793034CM 300K Rads (Si) RDS(on) ID 0.074 -20A* 0.074 -20A*
2N7625T3 IRHLYS797034CM 60V, P-CHANNEL
TECHNOLOGY
Low-Ohmic TO-257AA
International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLYS77034CM
Absolute Maximum Ratings
Parameter
ID@VGS = -4.5V, TC = 25C ID@VGS = -4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page -20* -16.6 -80 75 0.6 10 181 -20 7.5 10.9 -55 to 150
Pre-Irradiation
Units
A W
W/C
V mJ A mJ V/ns C
300 (0.063in/1.6mm from case for 10s) 4.3 (Typical)
g
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IRHLYS797034CM, 2N7625T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
-60
Typ Max Units
-- -0.06 -- -- 3.8 -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.074 -2.0 -- -- -1.0 -10 -100 100 36 14 18 32 265 100 85 -- V V/C V mV/C S A nA
Test Conditions
VGS = 0V, ID = -250A Reference to 25C, ID = -1.0mA VGS = -4.5V, ID = -16.6AA VDS = VGS, ID = -250A VDS = -10V, IDS = -16.6A A VDS= -48V ,VGS =0V VDS = -48V, VGS = 0V, TJ = 125C VGS = -10V VGS = 10V VGS = -4.5V, ID = -20A VDS = -30V VDD = -30V, ID = -20A, VGS = -5.0V, RG = 7.5
BV DSS /TJ Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage -1.0 -- VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 17 IDSS Zero Gate Voltage Drain Current -- -- IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- --
nC
ns
nH
Ciss Coss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- --
2249 580 86
-- -- -- 20
pF
Measured from Drain lead ( 6mm / 0.025 in from package ) to Source lead ( 6mm/ 0.025 in from package ) VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -20* -80 -5.0 100 128 A V ns nC
Test Conditions
Tj = 25C, IS = -20A, VGS = 0V A Tj = 25C, IF = -20A, di/dt -100A/s VDD -25V A
ton Forward Turn-On Time * Current is limited by package
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 1.67 80
Units
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLYS797034CM, 2N7625T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-state Resistance (Low Ohmic TO-257) Diode Forward Voltage Up to 300K Rads (Si)1
Min
-60 -1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = -250A VGS = VDS, ID = -250A VGS = -10V VGS = 10V VDS= -48V, VGS= 0V VGS = -4.5V, ID = -16.6A VGS = -4.5V, ID = -16.6A VGS = 0V, ID = -20A
-- -2.0 -100 100 -1.0 0.076 0.074 -5.0
1. Part numbers IRHLYS797034, IRHLYS793034
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm )) 38 5% 62 5% 85 5%
2
Energy
(MeV) 300 7.5% 355 7.5% 380 7.5%
Range
(m) 38 7.5% 33 7.5% 29 7.5%
@VGS= @VGS=
VDS (V)
@VGS= @VGS= @VGS= @VGS=
0V -60 -60 -60
2V -60 -60 -60
4V -60 -60 -60
5V -60 -60 -60
6V -60 -60 -
7V -40 -
-70 -60 -50 -40 -30 -20 -10 0 0 1 2 3 4 5 6 7 Bias VGS (V)
Bias VDS (V)
LET=38 5% LET=62 5% LET=85 5%
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHLYS797034CM, 2N7625T3
Pre-Irradiation
100
100
VGS TOP -10V -5.0V -4.5V -4.0V -3.5V -3.0V -2.5V BOTTOM -2.3V TOP VGS -10V -5.0V -4.5V -4.0V -3.0V -2.7V -2.5V -2.3V
-ID, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
BOTTOM
10 -2.3V
10
-2.3V
20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 1000 -VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
T J = 150C T J = 25C 10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -20A
1.5
-I D, Drain-to-Source Current (A)
1.0
0.5
VDS = -25V 60s PULSE WIDTH 15 1 2 2.5 3 3.5 4 4.5 5 -VGS, Gate-to-Source Voltage (V)
VGS = -4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLYS797034CM, 2N7625T3
RDS(on), Drain-to -Source On Resistance (m)
140 120 100 80 60 40 20 0 2 4 6 8 T J = 25C
ID = -20A
RDS(on), Drain-to -Source On Resistance ( m)
160
140 130 120 110 100 90 80 70 60 50 40 30 0 10 20 30 40 50 60 70 80 -I D, Drain Current (A) Vgs = -4.5V T J = 25C T J = 150C
T J = 150C
10
12
-VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs Gate Voltage
Fig 6. Typical On-Resistance Vs Drain Current
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
75
2.0
70
-V GS(th) Gate threshold Voltage (V)
ID = -1.0mA
1.5
65
1.0
60
0.5
ID = -50A ID = -250A ID = -1.0mA
ID = -150mA
0
55 -60 -40 -20 0 20 40 60 80 100 120 140 160
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
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IRHLYS797034CM, 2N7625T3
Pre-Irradiation
3600 3200 2800
-VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
12 ID = -20A 10 8 6 4 2 0 0 10 20 30 40 50 60 QG, Total Gate Charge (nC) VDS = -48V VDS = -30V VDS = -12V
C, Capacitance (pF)
2400 2000 1600 1200 800 400 0 1
Ciss
Coss
Crss
10 100
FOR TEST CIRCUIT SEE FIGURE 17
-VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
30 LIMITED BY PACKAGE 25
-I D, Drain Current (A)
VGS = 0V 4 5 6
-I SD , Reverse Drain Current (A)
10
T J = 150C
20 15 10 5
1
T J = 25C
0 0 1 2 3 -V SD , Source-to-Drain Voltage (V)
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current Vs. Case Temperature
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Pre-Irradiation
IRHLYS797034CM, 2N7625T3
EAS , Single Pulse Avalanche Energy (mJ)
1000
360
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) 100
100s
300
240
ID TOP -8.9A -12.6A BOTTOM -20A
180
10 Tc = 25C Tj = 150C Single Pulse 1 10
1ms
120
10ms
60
1
DC
0
100
25
50
75
100
125
150
-VDS , Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05
P DM t1 t2
0.1
0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1 1
0.01 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRHLYS797034CM, 2N7625T3
Pre-Irradiation
VDS
L
I AS
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
VGS -20V
tp
0.01
15V
tp V(BR)DSS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
-4.5V
QGS VG
QG QGD
50K
-12V 12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 17a. Basic Gate Charge Waveform
Fig 17b. Gate Charge Test Circuit
V DS VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
td(on) tr t d(off) tf
VGS
D.U.T.
+
10%
V DD
90% VDS
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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+
D.U.T.
-
VDS
-
Pre-Irradiation
IRHLYS797034CM, 2N7625T3
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L = 0.9 mH Peak IL = -20A, VGS = -10V A ISD -20A, di/dt -359A/s, VDD -60V, TJ 150C -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low Ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035]
CERAMIC EYELETS
13.63 [.537] 13.39 [.527] 1 2 3
16.89 [.665] 16.39 [.645]
10.92 [.430] 10.42 [.410]
B
C 15.88 [.625] 12.70 [.500]
0.71 [.028] MAX.
STANDARD PIN-OUT
OPTIONAL PIN-OUT
2.54 [.100] 2X
3X O
0.88 [.035] 0.64 [.025] CA B
3.05 [.120]
O 0.50 [.020]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2010
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