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MMBTA92
PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE FEATURES
* PNP silicon, planar design * High voltage (max. 300V) * In compliance with EU RoHS 2002/95/EC directives
300 Volts
POWER
225 mWatts
MECHANICAL DATA
Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram Marking: A92
ABSOLUTE RATINGS
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature
CONDITIONS open emitter o p e n b a se open collector
SYMBOL VCBO VCEO VEBO IC I CM I BM
MIN. -65 -65
MAX. -300 -300 -5 -500 -600 -100 225 +150 150 +150
UNIT V V V mA mA mA mW
o
TAMB<25oC ; note1
PTOT TSTG TJ TAMB
C C C
o
o
Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.
REV.0.2-JUL.10.2009
PAGE . 1
MMBTA92
T H E R M A L C H A R A C T E R IS T IC S
PA RA ME TE R
C O N D IT IO N S
S YM B O L RJA
VA L UE 500
U N IT K /W
The r m a l r e s i s ta nc e fr o m junc ti o n to a m b i e nt no te 1 N o t e 1 : Tr a n s i s t o r m o u n t e d o n F R - 4 b o a r d 7 0 x 6 0 x 1 m m . C H A R A C T E R IS T IC S TA MB = 2 5 oC unle s s o t he r wi s e s p e c i f i e d PA RA ME TE R C o lle c to r c ut- o ff c ur r e nt E m i tte r c ut- o ff c ur r e nt I I C O N D IT IO N S
E=0 ;V CB=-2 0 0 V
S YM B O L I I
CBO
M IN . 25 40 25 50
MA X . -250 -100 -500 -900 6 -
U N IT nA nA
C=0 ;V EB=-3 V
EBO
D C c ur r e nt g a i n
V C E= - 1 0 V ;no te 2 I C=-1mA I C=-10mA I C=-30mA I I
C=-2 0 mA ;I B=-2 mA
hF E
-
C o l l e c t o r - e m i t t e r s a t ur a t i o n vo l t a g e B a s e - e m i t t e r s a t ur a t i o n vo l t a g e C o lle c to r c a p a c i ta nc e Tr a n s i t i o n f r e q u e n c y No te 2 : P uls e te s t : tp < 3 0 0 s ; < 0 . 0 2
V C E (S A T) V B E (S A T) CC fT
mV mV pF MHz
C=-2 0 mA ;I B=-2 mA
I E = i e= 0 ; V C B = - 2 0 V ; f=1 MHz I C=-1 0 mA ;V CE=-2 0 V ; f=1 0 0 MHz
REV.0.2-JUL.10.2009
PAGE . 2
MMBTA92
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC) VCE = 20V, f = 100MHz
400
mW
320 280
fT
10 3 MHz
5
Ptot
240 200 160
10 2 5
120 80 40 0 0
15
30
45
60
75
90 105 120
C 150 TS
10 1 10 0
5
10 1
5
10 2 mA 5
10 3
C
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3
Ptot max 5 Ptot DC
D= tp T
tp
Operating range IC = f (VCEO) TA = 25C, D = 0
10 3
mA
C
T
10 2 5
10 2 5
10 1
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 s
10 1 5
DC
100 s 1 ms 100 ms 500 ms
5
10 5
0
10 0 10 -6
10
-5
10
-4
10
-3
10
-2
s
tp
10
0
10 -1 10 0
5
10 1
5
10 2
V5
V CEO
10 3
REV.0.2-JUL.10.2009
PAGE.3
MMBTA92
Collector cutoff current ICBO = f (TA ) VCB = 200V
10 4
Collector current IC = f (VBE) VCE = 10V
10 3 mA
CB0
nA
10 3
max
C
10 2 5
10
2
10 1
10 1
5
typ
10
0
10 0 5
10 -1
0
50
100
C
TA
150
10 -1
0
0.5
1.0
V
V BE
1.5
DC current gain hFE = f (IC ) VCE = 10V
10 3 5
Gain Bandwidth Product vs Collector Current
f T - GAIN BANDWIDTH PRODUCT (MHz)
h FE
10 5 2
10 1 5
2
100
VCE = 50V
80
60
VCE = 15V
40
20
0
1
10
20
50
100
I C - COLLECTOR CURRENT (mA)
10 0 -1 10
5 10 0
5 10 1
5 10 2 mA 10 3
C
REV.0.2-JUL.10.2009 PAGE . 4
MMBTA92
MOUNTING PAD LAYOUT
ORDER INFORMATION
* Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.
REV.0.2-JUL.10.2009
PAGE . 5

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