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| PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor FEATURES * RDS(ON),VGS@10V,I DS@30A=4m * RDS(ON),VGS@5.0V,I DS@24A=6m * Advanced trench process technology * High Density Cell Design For Uitra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * In compliance with EU RoHS 2002/95/EC directives G S D TO-252 MECHANICALDATA * Case : TO-252 Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 * Marking : 04N03D G D S Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Drain-Source Voltage Gate-Source Voltage Continous Drain Current Pulsed Drain Current (1) Avalanche Energy L=0.1mH,I D=53A,VDD=25V Power Dissipation TC=25oC TC=75oC TC=25oC Symbol VDS VGS ID I DM EAS PD TJ,TSTG RJC RJA Limits 25 +20 80 220 140 100 66 -55 to +175 1.5 Units V V A A mJ W Operating Junction and Stroage Temperature Range Junction-to-Case Junction-to-Ambient NOTE : Pulse width limited by maximum junction temperature o C o C/W 50 PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE December 10,2009-REV.00 PAGE . 1 PJ04N03D ELECTRICAL CHARACTERISTICS (TA=25oC,Unless Otherwise Noted) PA RA ME TE R S YM B O L T E S T C O N D IT IO N S M IN . T YP. MA X . U N IT S TA T IC D ra i n-S o urc e B re a k d o wn Vo lta g e Ga te Thre s ho ld Vo lta g e D r a i n - S o u r c e O n- s t a t e Re s i s t a nc e Ga te -B o dy L e ak a ge Ze r o Ga te Vo lta g e D ra i n C urre nt O n - S t a t e D r a i n C ur r e nt F o r w a r d Tr a ns c o n d uc t a nc e I V (B R)D S S V GS (TH) V GS= 0 V, I V D S = V GS, I D=2 50A D=250A D=3 0A D=2 4 A 25 1 65 15 3 .6 4 .8 - 3 4 .0 6 .0 +100 1 25 - V V m m nA A A A S V GS = 1 0 V, I R D S (ON) V GS= 5 V, I I GS S V D S= 0 V, V GS = + 2 0 V V D S = 2 0 V , V GS = 0 V I DSS V D S= 2 0 V, V GS = 0 V, TJ= 1 2 5 oC D (ON) V D S= 1 0 V, V GS = 1 0 V V DS= 5 V,I D=2 4 A g fs D YN A M IC V DS =1 5 V ,V GS =5 V,I To t a l G a t e C h a r g e QG D=3 0A - 2 6 .4 5 8 .2 5 .4 11 . 6 1 7 .6 11 . 8 4 8 .6 1 9 .2 2950 520 430 1 .2 22 18 72 26 - nC nC nC nC nS nS nS nS pF pF pF G a t e - S o ur c e C h a r g e Ga te -D ra i n C ha rg e Tur n- O n D e l a y Ti m e R i s e Ti m e Tur n- O f f D e l a y Ti m e F a l l Ti m e In p ut C a p a c i t a nc e O u t p ut C a p a c i t a nc e R e ve r s e Tr a ns f e r C a p a c i t a n c e Ga te Re s i s t a nc e Q GS QGD t d (o n) tr td(off) tf C IS S C OSS C RSS Rg V D S = 1 5 V , V GS = 1 0 V I D=30A - V D S= 1 5 V , I D = 1 A , V GS = 1 0 V R GS= 3 . 6 - V GS= 0 V, V D S = 1 5 V f=1 MHz - V GS = 1 5 m V , V D S = 0 V , f = 1 M H z - S o urc e -D ra i n D i o d e C o nt i n uo u s C ur r e n t F o rwa rd Vo lta g e I S I F = 3 0 A , V GS = 0 V - 80 1.3 A V V SD - NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. Switching Test Circuit VIN VDD Gate Charge Test Circuit VGS VOUT VDD RL RL RG 1mA RG December 10,2009-REV.00 PAGE . 2 PJ04N03D Typical Characteristics Curves ( Ta=25, unless otherwise noted) 100 ID - Drain-to-Source Current (A) 80 60 40 20 2.5V 0 0 2 3 4 VDS - Drain-to-Source Voltage (V) 1 5 80 ID - Drain Source Current (A) 4.0V VGS= 4.5V, 5.0V, 6.0V, 10.0V 3.5V 3.0V VDS =10V 60 40 TJ = 125oC 20 25oC - 55oC 0 1 1.5 2 2.5 3 3.5 4 VGS - Gate-to-Source Voltage (V) 4.5 Fig.1 Output Characteristric Fig.2 Transfer Characteristric RDS(ON) - On-Resistance (m ) RDS(ON) - On-Resistance (m ) 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 ID - Drain Current (A) 80 90 VGS = 10V 20 ID =30A 16 12 8 4 TJ =25oC 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 VGS = 5.0V 125oC Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance (Normalized) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) 4000 C - Capacitance (pF) VGS =10 V ID =30A 3500 3000 2500 2000 1500 1000 500 0 Ciss f = 1MHz VGS = 0V Coss Crss 0 VDS - Drain-to-Source Voltage (V) 5 10 15 20 25 Fig.5 On Resistance vs Junction Temperature December 10,2009-REV.00 Fig.6 Capacitance PAGE. 3 PJ04N03D Typical Characteristics Curves ( Ta=25, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 10 20 30 40 Qg - Gate Charge (nC) 50 60 100 IS - Source Current (A) VDS =15 V ID =30A VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform 1.3 Fig.8 Source-Drain Diode Forward Voltage 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) BVDSS - Breakdown Voltage(Normalized) Vth - G-S Threshold Voltage (Normalized) ID = 250A ID =250A 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature Fig.10 Threshold Voltage vs Junction Temperature December 10,2009-REV.00 PAGE. 4 PJ04N03D MOUNTING PAD LAYOUT ORDER INFORMATION * Packing information T/R - 3K per 13" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 10,2009-REV.00 PAGE . 5 |
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