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PTMA210404FL
Confidential, Limited Internal Distribution
Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 - 2200 MHz
Description
The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package. It is designed for use in cellular amplifier applications in the 18002200 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this amplifier offers excellent thermal performance and superior reliability. PTMA210404FL Package H-34248-12
Features
Broadband Performance of Each Side
VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA
* *
Designed for wide RF and modulation bandwidths and low memory effects Typical channel isolation = 26 dB Typical single channel performance CW, 2018 MHz, 28 V - Output power at P-1dB = 20 W - Linear Gain = 30.5 dB - Efficiency = 54% Typical Doherty performance with six-carrier TD-SCDMA signal, VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VG2A = 1.06 V, = 2018 MHz - Average output power = 10 W - Linear Gain = 27 dB - Efficiency = 35% - ACLR1 = -33 dBc - ACLR2 = -34 dBc
35
0
*
Gain
30 25 -5 -10 -15
Return Loss (dB)
Gain (dB)
*
20 15 10 5 1800
Return Loss Side A Side B
1900 2000 2100
-20 -25 -30 2200
* * *
Frequency (MHz)
Capable of handling 10:1 VSWR @ 28 V, 50 W (CW) output power Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F High-performance, thermally-enhanced package, Pb-free and RoHS compliant, with low-gold plating
RF Characteristics
Six-carrier TD-SCDMA Measurements in Doherty Circuit (tested in Infineon test fixture)
VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VGS2A = 1.05 V, POUT = 10 W average, = 2018 MHz, input PAR = 9.8 dB @ 0.01% CCDF
Characteristic
Gain Drain Efficiency Adjacent Channel Power Ratio Alternate Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated
Symbol
Gps
Min
26 33 -- --
Typ
27 35 -33 -34
Max
-- -- -30 -31
Unit
dB % dBc dBc
D
ACPR Alt
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 13 Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VGS2A = 1.05 V, = 2018 MHz
Characteristic
Gain Flatness Gain Compression
Conditions
1 W / 15 MHz 40 W
Symbol
G --
Min
-- --
Typ
0.30 -0.4
Max
-- -1.0
Unit
dB dB
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on)1 RDS(on)2
Min
65 -- -- -- -- 2.0 --
Typ
-- -- -- 3.6 0.6 2.4 --
Max
-- 1.0 10.0 -- -- 3.0 1.0
Unit
V A A V A
Final Stage On-state Resistance
VGS = 10 V, V DS = 0.1 V
Operating Gate Voltage Gate Leakage Current
VDS = 28 V, IDQ1 = 50 mA, IDQ2 = 120 mA VGS = 10 V, V DS = 0 V
VGS IGSS
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Input Power for CW - each side Total Device Dissipation Stage 1 Above 25C derate by Stage 2 Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) Stage 1 Stage 2 TSTG RJC RJC PD
Symbol
VDSS VGS TJ PIN PD
Value
65 -0.5 to +12 200 < 20 29 0.167 110 0.625 -40 to +150 6.0 1.6
Unit
V V C dBm W W/C W W/C C C/W C/W
*See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTMA210404FL V1 PTMA210404FL V1 R250
Package Outline
H-34248-12 H-34248-12
Flange Type
Earless flange Earless flange
Shipping
Tray Tape & Reel 250 pcs
Marking
PTMA210404FL PTMA210404FL
Typical Performance (data taken in a production test fixture)
Six-carrier TD-SCDMA Drive-up
Single Side: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA, = 2017.5 MHz
-20 -25 35 30
CW Performance of Each Side
VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA
32 31
60
Gain
50 40 30
-30 -35 -40 -45 33
25 20 15 10
30 29
Efficiency
28 27 30 32 34 36 38
2010 MHz 2018 MHz 2025 MHz 40 42 44
20 10
34
35
36
37
38
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 13
Rev. 04, 2009-06-16
Power Added Efficiency (%)
Efficiency (%)
ACPR (dBc)
Gain (dB)
Adj Low er Adj Upper Alt Low er Alt Upper Efficiency
PTMA210404FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Performance at Various I DQ1
Single Side, = 2018 MHz VDD = 28 V, IDQ1 = Varying, IDQ2 = 120 mA
-30
Two-tone Performance at Various I DQ2
Single Side, = 2018 MHz VDD = 28 V, IDQ1 = 60 mA, IDQ2 = Varying
-30
3rd Order Intermodulation Distortion (dBc)
-34 -36 -38 -40 -42 -44
55mA 60mA 65mA 70mA
3rd Order Intermodulation Distortion (dBc)
-32
50mA
-35 -40 -45 -50 -55 -60
100mA 110mA 120mA 130mA 140mA 30 31 32 33 34 35 36 37 38 39 40
30 31 32 33 34 35 36 37 38 39 40
Average Output Power (dBm)
Average Output Power (dBm)
CW Sweep at P-1dB
VDD1 = VDD2 = 28V, IDQ1 = 50 mA, IDQ2 = 120 mA
Two-carrier WCDMA Performance
VDD1 = VDD2 = 28 V, IDQ1 = 60 mA, IDQ2 = 260 mA 10 MHz Spacing, 8 dB PAR, = 2140 MHz
60 50
32 31
-15
40
3rd Order IMD
Gain (dB)
30 29 28 27 26 30 31 32 33 34 35 36 37 38 39 40 41 42 43
40 30
-25 -30 -35 -40 -45 -50 27 28 29 30 31 32 33 34 35 36 37 38 39 40
30 25
Efficiency
2110 MHz 2140 MHz 2170 MHz
IM3L
20 10 0
IM3U ACPR
20 15 10 5
Output Power (dBm)
Average Output Power (dBm)
Data Sheet
4 of 13
Rev. 04, 2009-06-16
Drain Efficiency (%)
Gain
Drain Efficiency (%)
-20
Efficiency
35
PTMA210404FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW Performance
Doherty Circuit, Carrier: VDD = 28 V, IDQ1 = 55 mA, IDQ2 = 120 mA Peaking: VDD = 28 V, IDQ1 = 55 mA, VGS2 = 1.07 V
29 60
Broadband Performance
Doherty Circuit Carrier: VDD = 28 V, IDQ1 = 55 mA, IDQ2 = 120 mA Peak: VDD = 28 V, IDQ1 = 55 mA, VGS2 = 1.07 V
35 30 25 20 15 10 5 1800 -5 -10 -15 -20
Input Return Loss (dB)
Gain
28
Efficiency
50 40 30
Gain (dB)
27 26 25 24 32
Gain
Return Loss
-25 -30 -35 2200
2010 MHz 2018 MHz 2025 MHz 34 36 38 40 42 44 46 48
20 10
1900
2000
2100
Frequency (MHz)
Output Power (dBm)
Power Gain vs Frequency
Doherty Circuit, CW, 40W Carrier: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA Peaking: VDD = 28V, IDQ1 = 60 mA, VGS2 = 1.07 V
28 27 26 25 24 23 22 1800 55
29
CW at Various Drain Voltage
Doherty Circuit, = 2018 MHz
60 50
Power Added Efficiency (%)
Gain
50 45 40
28
Gain (dB)
Gain (dB)
27 26 25 24 32
Gain
40 30 24 V 28 V 32 V 20 10
Efficiency
35 30 25 2100
1850
1900
1950
2000
2050
34
36
38
40
42
44
46
48
Frequency (MHz)
Output Power (dBm)
Data Sheet
5 of 13
Rev. 04, 2009-06-16
Power Added Efficiency (%)
Efficiency
Power Added Efficiency (%)
Gain (dB)
PTMA210404FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
CW at Various Temperatures
Doherty Circuit, Carrier: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA Peaking: VDD = 28 V, IDQ1 = 60 mA, VGS2 = 1.07 V
32 30 60
Gate - Source Voltage vs. Temperature
VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA
2.70
Power Added Efficiency (%)
Gate - Source Voltage (V)
-25oC 25oC 90oC
Efficiency
50 40
2.60 2.50 2.40 2.30 2.20
IDQ2 Slope = -1.168 mV/C
Gain (dB)
28 26 24 22 32 34 36 38 40 42 44 46 48
Gain
30 20 10
IDQ1 Slope = -1.435 mV/C
2.10 -30
-10
10
30
50
70
90
Output Power (dBm)
Temperature (C)
Broadband Circuit Impedance
Frequency
MHz 2000 2010 2020 2030 2040
R
Z Source
R 74.7 75.6 76.5 77.4 78.3 jX 25.2 24.9 24.5 24.1 23.7
Z Load
R 4.2 4.2 4.2 4.2 4.1 jX -2.2 -2.1 -2.0 -1.9 -1.9
G S D
Z Source
Z Load
- WAVE LE NGTH S T OW A
Z0 = 50
0.0
0.1
0.2
0.3
0.4
ARD LOAD HS TOW E NGT
2040 MHz
Z Load
2000 MHz
0.1
Data Sheet
6 of 13
0.5
0 .1
2000 MHz 2040 MHz
Z Source
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Reference Circuit
VDD 1 C1 10F C2 10F C3 1F C4 . 1F C5 12pF
VG1 R5
C6 10F
Q3 VG2 R4
C7 1F
C8 .1F
C9 12pF
C10 10F
C11 1F
C12 .1F
C13 12pF
C29 12pF
C30 .1F
C31 1F
C32 10F
VDD2 C33 100 F
l14
R1 50KV J1
l12
C14 0.9pF l13
3 4 5 6 7 8 9
C39 2.4pF 1 l 15 l16 l17
C40 0. 9pF l 18 l19
C41 12pF l 20 l10 l9 C46 0. 7pF l 11 J2
l1
l2 C28 0.9pF
10 11 12
2
C45 12pF l4 l5 C42 2.4pF l6 l7 C43 1.1pF l8 C44 0.7pF
l3
VG1 R3
C24 10F
Q1 VG2 R2
C25 1F
C26 .1F
C27 12pF
d_ 6- 1 2- 09
C34 12pF
C35 .1F
C36 1F
C37 10F
VDD2 C38 100 F
C20 10F
Q2
C21 1F
C22 .1F
C23 12pF
VDD 1 C15 10F C16 10F C17 1F C18 . 1F C19 12pF
Reference circuit block diagram for = 2017.5 MHz
Data Sheet
a
2 10 4
04 ef l _ b
7 of 13
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Circuit Assembly Information
DUT PCB PTMA210404FL 0.76 mm [.030"] thick, r = 3.48 LDMOS IC Rogers RO4350 1 oz. copper
Microstrip
Electrical Characteristics at 2017.5 MHz
0.285 0.302 0.311 0.031 0.056 0.051 0.043 0.071 0.239 0.289 0.086 0.285 0.302 0.311 0.031 0.056 0.051 0.043 0.071 0.140 , 51.0 , 51.0 , 67.0 , 17.2 , 17.2 , 19.5 , 28.0 , 51.0 , 51.0 , 33.0 , 51.0 , 51.0 , 51.0 , 67.0 , 17.2 , 17.2 , 19.5 , 28.0 , 51.0 , 51.0
Dimensions: L x W (mm)
25.68 x 1.63 27.23 x 1.63 28.58 x 1.02 2.59 x 7.24 4.75 x 7.24 4.29 x 6.22 3.71 x 3.94 6.43 x 1.63 21.54 x 1.63 24.54 x 3.15 7.75 x 1.63 25.68 x 1.63 27.23 x 1.63 28.58 x 1.02 2.59 x 7.24 4.75 x 7.24 4.29 x 6.22 3.71 x 3.94 6.43 x 1.63 12.65 x 1.63
Dimensions: L x W (in.)
1.011 1.072 1.125 0.102 0.187 0.169 0.146 0.253 0.848 0.966 0.305 1.011 1.072 1.125 0.102 0.187 0.169 0.146 0.253 0.498 x x x x x x x x x x x x x x x x x x x x 0.064 0.064 0.040 0.285 0.285 0.245 0.155 0.064 0.064 0.124 0.064 0.064 0.064 0.040 0.285 0.285 0.245 0.155 0.064 0.064
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 l15 l16 l17 l18 l19 l20
Data Sheet
8 of 13
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C31 C1 VDD C14 C6 VG1 R1 2A1306-3 0324 R5 Q3 R4 C10 C11 VG2 C15 C28 C24 R3 VG1 Q2 R2 VG2 Q1 C36
a 210404 e f l _ CD -assy 6- 10 - 09
C3 C7
C2 C4 C5
VDD C29 C30 C32 C33
VG2 C8 C9
C39
C40 C46
XInger
RF_IN
C13 C12 C19 C18 C27 C17 C23 C22 C21 C20
C41 C42 C43 C44
C45
Reference circuit assembly diagram (not to scale)*
Component
C1, C15 C2, C6, C10, C15, C20, C24, C32, C37 C3, C7, C11, C17, C21, C25, C31, C36 C4, C8, C12, C18, C22, C26, C30, C35 C5, C9, C13, C19, C23, C27, C29, C34, C41, C45 C14, C28, C40 C33, C38 C39, C42 C43 C44, C46 Q1, Q2, Q3 R1 R2, R3, R4, R5
*Gerber Files for this circuit available on request Data Sheet 9 of 13 Rev. 04, 2009-06-16
ANAREN
VDD C16
RF_OUT
C25 C26
C34
C35
C37 VDD
C38
Description
Tantalum Capacitor, 10 F, 35 V Ceramic Capacitor, 10 F Ceramic Capacitor, 1 F Capacitor, 0.1 F Ceramic Capacitor, 12 pF Ceramic Capacitor, 0.9 pF Electrolitic Capacitor, 100 F, 35 V Ceramic Capacitor, 2.4 pF Ceramic Capacitor, 1.1 pF Ceramic Capacitor, 0.7 pF Transistor Chip Resistor, 50 ohms Potentiometer, 2 k-ohms
Suggested Manufacturer P/N or Comment
Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC Digi-Key ATC ATC ATC Infineon Technologies Digi-Key Digi-Key 399-1655-2-ND 490-1891-2-ND 445-1411-2-ND 399-1267-2-ND 600S120JT 600S0R9BT PCE3373TR-ND 600S2R4BT 600S1R1BT 600S0R7BT BCP56 RFP100200-4Y502 3224W-202ETR-ND
PTMA210404FL
Confidential, Limited Internal Distribution
Application Examples
Single - ended
Doherty
In In
Out Out
In 90 Out
Quadrature Combined
Push-pull
In Out
In
Out
Data Sheet
10 of 13
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Package Specifications Package H-34248-12 Outline
8.223 [.324] 4.112 [.162] 2X (45 X 2.03 [.08]) C L 2.7280.510 [.107.020] 2X 5.710 [.225] R0.51+.381 -.127 R.020+.015 -.005 FLANGE
[
2
]
1
9.771 [.385] FLANGE
C L
9.398 [.370] LID
15.2270.510 [.600.020]
34 5 67
8 9 10 11 12
2X 1.269 [.050] 2X 4.213 [.166] 2X 7.157 [.282]
2X 2.538 [.100] 2X 5.888 [.232] 14.720 [.580] REF 19.8120.200 [.780.008]
8X 0.406 [.016] 2X 0.762 [.030]
SPH 1.575 [.062] 3.6320.380 [.143.015]
1.016 [.040]
C66065-A0003-C728-01-0027 H-34248-12-1.dwg 6-12-09
C L SOURCE 20.583 [.810]
0.038 [.0015] -A-
Diagram Notes--unless otherwise specified: 1. 2. 7. 4. 5. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. All tolerances 0.127 [.005] unless specified otherwise. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: 0.254 micron [10 microinch] max.
Data Sheet
11 of 13
Rev. 04, 2009-06-16
PTMA210404FL
Confidential, Limited Internal Distribution
Package Specifications (cont.) Package H-34248-12 Pinout
Top View
VD1A NC RFINA VG1A VG2A VD1B NC RFINB VG1B VG2B
3 4 5 6 7 1
VD2A
8 9 10 11 12
a 2 1 0 4 0f l _h - 3 4 2 4- 8 2 _P D _0 5- 2 2- 0 9 4 1
2
VD2B
Source: Package Flange Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 04, 2009-06-16
PTMA210404FL V1 Confidential, Limited Internal Distribution Revision History: 2009-06-16 2009-06-05, Preliminary Data Sheet Previous Version: Page all 7, 8, 9 11 Subjects (major changes since last revision) Remove Preliminary designation Add reference circuit information Finalize package information
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
Edition 2009-06-16 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 04, 2009-06-16

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