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RLS-73
Diodes
Leadless High Speed Switching Diode
RLS-73
Application High speed switching Features 1) Ultra small. (LLDS) 2) For surface mounting 3) High speed (trr=2ns Typ.) & high reliability.
ROHM : LLDS JEDEC : LL-34
External dimensions (Unit : mm)
CATHODEBAND (YELLOW) 0.4 0.4
3.40.2 1.5MAX
Construction Silicon epitaxial planar
Land size figure (Unit : mm)
5.0 R1.4 1.4 1.4 1 .6
Structure
Taping dimensions (Unit : mm)
1.750.1 4.00.1 2.00.05 1.50.1 0 0.3MAX
3.50.05
8.00.3
1.40.1
1.80.2 TE-11 4.00.1 1.00.2 0 3.80.1 1.60.1
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Peak reverse current Average rectified forward current Surge current 1s Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge P Tj Tstg Limits 90 80 400 130 600 300 175 -65 to +175 Unit V V mA mA mA mW
Electrical characteristics (Ta=25C) Parameter Symbol
Forward voltage Reverse current Capacitance between terminals Reverse recovery time
VF IR Ct Trr
Min. -
Typ. -
Max. 1.2 0.5 2.0 4.0
Unit V A pF ns
Conditions IF=100mA VR=80V VR=0.5V , f=1MHz VR=6.0V,IF=10mA,RL=50
Rev.C
1/3
RLS-73
Diodes
Electrical characteristic curves (Ta=25C)
100 Ta=75 1000000 Ta=125 Ta=25 10 Ta=175 Ta=-25 100000 Ta=175 Ta=125 Ta=75 Ta=25 Ta=-25 1 0.1 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGEVF(V) VF-IF CHARACTERISTICS 1.2 0 10 20 30 40 50 60 70 80 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
10000 1000 100 10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
1
0.1
0.1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
950
100
1
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
940
Ta=25 Ta=25 IF=100mA IF=100mA n=30pcs n=30pcs
90 80 70 60 50 40 30 20 10 AVE:21.9nA 0
Ta=25 VR=80V n=30pcs
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
AVE:0.803pF
Ta=25 VR=0.5V f=1MHz n=10pcs
930
920 AVE:926.5mV AVE:926.5mV 910
900 VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
3 2.5 2 1.5 1 0.5 0 IFSM DISRESION MAP trr DISPERSION MAP Mounted on epoxy board
20
PEAK SURGE FORWARD CURRENT:IFSM(A)
15 8.3ms 10 AVE:11.6A 5
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm
1cyc
RESERVE RECOVERY TIME:trr(ns)
Ta=25 VR=6V IF=10mA RL=50 n=10pcs
Ifsm 15 8.3ms 8.3ms 1cyc
10
AVE:1.46ns
5
0
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
100
1000
IM=1mA
IF=10mA
0.02
Rth(j-a)
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
1ms
time
Rth(j-l) 100 Rth(j-c)
REVERSE POWER DISSIPATION:PR (W)
300us
0.015
10
0.01
DC
D=1/2
0.005
1 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100
10 0.001
0
0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0
Sin(180) 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.C
2/3
RLS-73
Diodes
0.4 0.35
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V DC
Io
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 Sin(180) D=1/2 DC 0A 0V t T Io
ELECTROSTATIC DISCHARGE TEST ESD(KV)
20
t T
0.3 0.25 0.2 0.15 0.1 0.05 0 0 Sin(180) D=1/2
VR D=t/T VR=40V Tj=175
VR D=t/T VR=40V Tj=175
15
10 AVE:2.2kV 5
AVE:7.4kV
0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 175
25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
175
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
Rev.C
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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