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| SMD Type Low Frequency Transistor 2SA2018 Transistors IC SOT-523 +0.1 1.6-0.1 Unit: mm Features A collector current is large Collector saturation voltage is low. VCE(sat) 250mA at IC=200mA/IB=10mA 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 +0.1 0.5-0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=1ms Symbol VCBO VCEO IC ICP * PC Tj Tstg Rating 15 12 500 1 150 150 -55 to +150 Unit V V mA A mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO hFE IC=10 IC=1mA IE=10 A A Testconditons Min 15 12 6 100 270 100 6.5 260 680 250 mV pF MHz Typ Max Unit V V V nA VCB=15V VCE=2V, IC=10mA VCE(sat) IC/IB=200mA/10mA Cob fT VCB=10V, IE=0A, f=1MHz VCE=2V, IE=10mA, f=100MHz Marking Marking BW +0.05 0.8-0.05 www.kexin.com.cn 1 |
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