 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = 60V : RSAT = 34m ; IC = 4.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * Extemely low equivalent on-resistance; RSAT = 34m at 5A * 4.5 amps continuous current * Up to 15 amps peak current * Very low saturation voltages E-LINE APPLICATIONS * Emergency lighting circuits * Motor driving (including DC fans) * Solenoid, relay and actuator drivers * DC modules * Backlight inverters ORDERING INFORMATION DEVICE ZXTN2010ASTOA ZXTN2010ASTZ QUANTITY 2000 units / reel 2000 units / carton DEVICE MARKING ZXT N20 10 PINOUT ISSUE 2 - MAY 2006 1 SEMICONDUCTORS ZXTN2010A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Peak pulse current Practical power dissipation (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range (a) SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 150 60 7 4.5 15 1.0 8 0.71 5.7 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient Junction to ambient (a) (b) SYMBOL R JA R JA VALUE 125 175 UNIT C/W C/W NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b For a device mounted in a socket in still air conditions. Collector lead length 10mm. ISSUE 2 - MAY 2006 SEMICONDUCTORS 2 ZXTN2010A CHARACTERISTICS ISSUE 2 - MAY 2006 3 SEMICONDUCTORS ZXTN2010A ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R 1k I EBO V CE(SAT) 18 40 45 95 170 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) h FE 100 100 55 20 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF * Measured under pulsed conditions. Pulse width 950 840 200 200 105 40 130 31 42 760 300 s; duty cycle 2%. 300 MIN. 150 150 60 7 TYP. 190 190 80 8.1 50 0.5 100 0.5 10 30 55 65 130 210 1050 950 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV mV I C =100 A I C =1 A, RB 1k I C =10mA* I E =100 A V CB =120V VCB=120V, Tamb=100 C V CB =120V VCB=120V, Tamb=100 C V EB =6V I C =100mA, I B =5mA* IC=1A, IB=100mA* IC=1A, IB=50mA* IC=2A, IB=50mA* IC=5A, IB=200mA* I C =4A, I B =200mA* I C =4A, V CE =1V* I C =10mA, V CE =1V* IC=2A, VCE=1V* IC=5A, VCE=1V* IC=10A, VCE=1V* MHz I C =100mA, VCE =10V f=50MHz pF ns ns V CB =10V, f=1MHz* I C =1A, V CC =10V, I B1 =I B2 =100mA ISSUE 2 - MAY 2006 SEMICONDUCTORS 4 ZXTN2010A TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2006 5 SEMICONDUCTORS ZXTN2010A PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A B C D E F G L 0.41 0.41 3.61 4.37 2.16 -- Max 0.495 0.495 4.01 4.77 2.41 2.50 Min 0.016 0.016 0.142 0.172 0.085 -- Max 0.0195 0.0195 0.158 0.188 0.095 0.098 Inches 1.27 NOM 13.00 13.97 0.050 NOM 0.512 0.550 (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2006 SEMICONDUCTORS 6 |
Price & Availability of ZXTN2010ASTOA
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |