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| PD - 96159 IRLML6302GPBF l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free Halogen-Free HEXFET(R) Power MOSFET * ' 6 VDSS = -20V RDS(on) = 0.60 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro3TM Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -0.78 -0.62 -4.9 540 4.3 12 -5.0 -55 to + 150 Units A mW mW/C V V/ns C Thermal Resistance RJA Maximum Junction-to-Ambient Parameter Typ. Max. 230 Units C/W www.irf.com 1 07/23/08 IRLML6302GPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) g fs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 -0.70 0.56 Typ. -4.9 2.4 0.56 1.0 13 18 22 22 97 53 28 Max. Units Conditions V VGS = 0V, ID = -250A mV/C Reference to 25C, ID = -1mA 0.60 VGS = -4.5V, ID = -0.61A 0.90 VGS = -2.7V, ID = -0.31A -1.5 V VDS = VGS, ID = -250A S VDS = -10V, ID = -0.31A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 3.6 ID = -0.61A 0.84 nC VDS = -16V 1.5 VGS = -4.5V, See Fig. 6 and 9 VDD = -10V ID = -0.61A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = -15V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD trr Q rr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- -0.54 --- 35 26 -4.9 -1.2 53 39 V ns nC A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = -0.61A, VGS = 0V TJ = 25C, IF = -0.61A di/dt = -100A/s D G S Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -0.61A, di/dt 76A/s, VDDV(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. www.irf.com 2 IRLML6302GPBF 10 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 -I D , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 1 1 0.1 0.1 -1.5V 20s PULSE WIDTH TJ = 150C 0.1 1 10 0.01 0.1 -1.5V 1 20s PULSE WIDTH TJ = 25C A 10 0.01 A -VDS , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -0.61A 1.5 1 1.0 0.1 0.5 0.01 1.5 2.0 2.5 3.0 VDS = -10V 20s PULSE WIDTH 3.5 4.0 4.5 A 0.0 -60 -40 -20 0 20 40 60 80 V GS = -4.5V 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6302GPBF 180 160 140 -V GS , Gate-to-Source Voltage (V) Ciss V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 I D = -0.61A VDS = -16V 8 C, Capacitance (pF) 120 100 80 60 40 20 0 1 Coss 6 Crss 4 2 10 100 A 0 0.0 FOR TEST CIRCUIT SEE FIGURE 9 1.0 2.0 3.0 4.0 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 10 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) -I D , Drain Current (A) 1 100s TJ = 150C TJ = 25C 0.1 1 1ms 10ms 0.01 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 0.1 1 TA = 25C TJ = 150C Single Pulse 10 100 A -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4 IRLML6302GPBF QG V DS VGS RG RD -4.5V VG -4.5V Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% VGS -3mA IG ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 1 0.1 0.00001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com + D.U.T. VDS 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms t1 , Rectangular Pulse Duration (sec) + - QGS QGD D.U.T. VDD - 5 IRLML6302GPBF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS* ** * dv/dt controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD * * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13. For P-Channel HEXFETS www.irf.com 6 IRLML6302GPBF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) 6 D A 5 DIMENSIONS SYMBOL MILLIMETERS MIN MAX INCHES MIN MAX 3 6 E1 1 2 E 0.15 [0.006] M C B A 5 B e e1 A A2 C H 4 L1 c 0.10 [0.004] C L2 3X L 7 A1 3X b 0.20 [0.008] M C B A A A1 A2 b c D E E1 e e1 L L1 L2 0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0 1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8 "$ 0.0004 "$ ! " '" #& "& &$ % ! 0 ## # # ! ' ! # $$ 7T8 7T8A !# REF BSC 8 Recommended Footprint 0.972 0.950 NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. 0.802 2.742 1.900 Micro3 (SOT-23 / TO-236AB) Part Marking Information Micro3 / SOT-23 Package Marking XA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S Y = YEAR W = WEEK PART NUMBER A YW LC HALOGEN FREE INDICATOR LOT CODE @6S ! !! !" !# !$ !% !& !' !( ! ! " # $ % & ' ( XPSF X@@F ! " # X 6 7 8 9 PART NUMBER CODE REFERENCE: A = IRLML2402 B =IRLML2803 C = IRLML2402 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 Note: A line above the work week (as shown here) indicates Lead-free !# !$ !% XPSF X@@F !& !' !( " Y a XA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ !% !& !' !( ! 6 7 8 9 @ A B C E F X 6 7 8 9 $ $ $! Y a Note: For the most current drawing please refer to IR website at http://www.irf.com/package www.irf.com 7 IRLML6302GPBF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 ) TR 3.55 ( .139 ) 3.45 ( .136 ) 8.3 ( .326 ) 7.9 ( .312 ) FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 1.1 ( .043 ) 0.9 ( .036 ) 0.35 ( .013 ) 0.25 ( .010 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2008 8 |
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