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| WFY4101 Trench Power MOSFET -20 V, Single P-Channel, SOT-23 SOT- Features -3.2A, -20V, RDS(on)(Max 85m)@VGS=-4.5V -1.8 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi's advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Absolute Maximum Ratings Symbol VDSS ID Drain Source Voltage Continuous Drain Current(Note 1) Steady State t10s Steady State t10s Steady State t=10s Tc=25 Tc=85 Tc=25 Tc=25 Tc=25 Tc=85 Tc=25 Parameter Value -20 -2.4 -1.7 -3.2 0.73 1.25 -1.8 -1.3 0.42 -7.5 8 C=100pF,R S = 1500 225 -55~150 260 Units V A PD ID PD IDM VGS ESD TJ, Tstg TL Total Power Dissipation(Note 1) Continuous Drain Current(Note 2) Total Power Dissipation(Note 2) Drain Current Pulsed Gate to Source Voltage ESD Capability (Note 3) Junction and Storage Temperature W A W A V V Maximum lead Temperature for soldering purposes Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min - Typ - Max 170 110 300 Units /W /W /W Note 1: Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Note 2: Surface-mounted on FR4 board using the minimum recommended pad size. Note 3: ESD Rating Information: HBM Class 0 Rev. A Mar.2010 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. P02-1 WFY4101 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current(Note 4) Drain cut-off current(Note 4) Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V(BR)DSS VGS(th) Test Condition VGS = 8 V, VDS = 0 V VDS = -16 V, VGS = 0 V ID = -250 A, VGS = 0 V VDS = VDS ID =-250 A VGS = -4.5 V, ID = -1.6 A Min -20 -0.40 - Type -0.72 70 90 112 Max 100 -1 -1.5 85 120 200 - Unit nA A V V Drain-source ON resistance RDS(ON) VGS = -2.5 V, ID = -1.3 A VGS = -1.8 V, ID = -0.9 A m Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time (Note 5) gfs Ciss Crss Coss tr ton tf toff Qg VDS = -5.0 V, ID = -2.3 A VDS = -10 V, VGS = 0 V, f = 1 MHz VGS = -4.5 V, VDS = -10 V, ID = - 75 675 75 100 12.6 7.5 21.0 30.2 7.5 1.2 2.2 6.5 S pF Turn-on time Fall time Turn-off time ns 8.5 nC -1.6 A, RG = 6.0 VGS = -4.5 V, VDS = -10 V, Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Reverse Recovery Charge Qgs Qgd RG ID = -1.6 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Charge Time Discharge Time Reverse recovery charge Symbol IDR IDRP VDSF trr ta tb Qrr Test Condition IDR = -2.4A, VGS = 0 V IDR = -2.4A, VGS = 0 V, dIDR / dt = 100 A / s Min - Type -0.82 12.8 9.9 3.0 Max -2.4 -7.5 -1.2 15 Unit A A V ns ns ns - 1008 - C Note 4: Pulse Test: Pulse Width 300s, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/5 Steady, all for your advance WFY4101 Fig. 1 On-State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance vs. Drain Current and On- Temperature Fig.4 Diode Forward Voltage vs. Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/5 Steady, all for your advance WFY4101 Fig.7 Resistive Switching Time Variation vs. Gate Resistance Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Drain-to-Source Leakage Current Fig.9 Drain-to- vs. Voltage Fig.10 On-Resistance vs. Drain Current and Fig.10 On- Temperature 4/5 Steady, all for your advance WFY4101 SOT-23 Package Dimension 5/5 Steady, all for your advance |
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