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TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
APT50GP60LDL(G)
600V, 50A, VCE(ON) = 2.2V Typical
Resonant Mode Combi IGBT(R)
The POWER MOS 7(R) IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications * Induction Heating * Welding * Medical * High Power Telecom * Resonant Mode Phase Shifted Bridge
G C E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
Ratings UNIT Volts
600 30
@ TC = 25C
150 72 190 190A @ 600V 625 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 4.5 2.2 2.1 525
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C)
I CES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
11-2008 052-6354 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2750
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GP60LDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 50A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A
4 5
MIN
TYP
MAX
UNIT
5700 465 30 7.5 165 40 50 190 19 36 85 60 465 835 635 19 36 115 85 465 1260 1060 J
ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
RG = 4.3 TJ = +25C
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A RG = 4.3
55
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.20 .63 6.10
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6354
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
70 60 50 40 TJ = -55C 30 TJ = 25C 20 TJ = 125C 10 0 70 60 50 40 TJ = -55C 30 20 10 0 TJ = 25C TJ = 125C
APT50GP60LDL(G)
IC, COLLECTOR CURRENT (A)
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) 100 90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0 0 1 23 456 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 100A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12
VCE = 300V
I = 50A C T = 25C
J
VCE = 120V
10 8 6 4 2 0 33.5 0 20 40 60 80 100 120 140 160 180 GATE CHARGE (nC)
VCE = 480V
TJ = -55C TJ = 25C TJ = 125C
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5
3 2.5 IC = 100A IC = 50A 2 IC = 25A 1.5 1 0.5
IC = 50A 2.0 1.5 1.0 0.5 0 IC = 25A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.20
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50
180 160 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 11-2008 052-6354 Rev B
Lead Temperature Limited
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT50GP60LDL(G)
25 td(ON), TURN-ON DELAY TIME (ns) VGE = 15V 20 td (OFF), TURN-OFF DELAY TIME (ns) 140 120 100
VGE =15V,TJ=125C
15
80 60 40 20 VCE = 400V RG = 4.3 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120
RG = 4.3, L = 100H, VCE = 400V TJ = 125C, VGE = 15V VGE =15V,TJ=25C
10
5 VCE = 400V TJ = 25C or 125C 0
RG = 4.3 L = 100H
30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 90 80
RG = 4.3, L = 100H, VCE = 400V
20
0
L = 100H
20
100 70 tr, RISE TIME (ns) tf, FALL TIME (ns) 60 50 40 30 20 10 20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EON2, TURN ON ENERGY LOSS (J) 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.3
G
80
60
TJ = 25C, VGE = 15V
40
TJ = 25 or 125C,VGE = 15V
20 0 0
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
3000 2500
TJ = 125C
2000 1500 1000
TJ = 25C
500 0
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE T = 125C
J
20 30 40 50 60 70 80 90 100 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000 SWITCHING ENERGY LOSSES (J) 3500 3000 2500 2000 1500 1000 500 0 0
Eon2,50A Eoff,50A Eon2,25A Eoff,25A Eoff,100A
V = 400V CE V = +15V GE R = 4.3
G
5000
Eon2,100A
4000
Eon2,100A Eoff,100A
3000
11-2008
2000
Eon2,50A Eoff,50A Eoff,25A
Rev B
1000 E 25A on2, 0 0
052-6354
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 IC, COLLECTOR CURRENT (A)
Cies
APT50GP60LDL(G)
200 180 160 140 120 100 80 60 40 20
C, CAPACITANCE ( F)
1,000 500
Coes
P
100 50
Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.20 D = 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
220 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
100
0.00908
0.00463
50
0.0193 Power (watts) 0.0658
0.00218
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
T = 125C J T = 75C C D = 50 % = 667V V CE R = 5
G
0.0142
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
0.0658 .1055 Case temperature. (C)
0.0142 .346
10
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10 20
052-6354
Rev B
11-2008
APT50GP60LDL(G)
APT50DL60
10%
Gate Voltage TJ = 125 C
td(on)
V CC
IC
V CE
tr 90% 10%
Collector Current
A D.U.T.
5%
5 % Collector Voltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage
TJ = 125 C
td(off)
tf
Collector Voltage
90%
0 Switching Energy 10% Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
052-6354
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
APT50GP60LDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 124C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT50GP60LDL(G) UNIT
50 150 320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 50A VF Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN TYP MAX UNIT
1.25 2.0 1.25
MIN TYP
1.6
Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.7 ZJC, THERMAL IMPEDANCE (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0
Note:
52 399 1498 9 649 3734 13 284 5134 34 -
IF = 50A, diF/dt = -200A/s VR = 400V, TC = 25C
-
nC Amps ns nC Amps ns nC Amps
IF = 50A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 50A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
0.316
Dissipated Power (Watts)
TC (C)
0.312
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
ZEXT
0.00467
0.1483
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6354
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
120 TJ= 125C 100 IF, FORWARD CURRENT (A) TJ= 55C 80 TJ= 25C 60 40 20 0 TJ= 150C trr, COLLECTOR CURRENT (A) 700 100A 600 500 400 300 200 100 0 25A
APT50GP60LDL(G)
T = 125C J V = 400V
R
50A
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage
T = 125C J V = 400V
R
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 45 IRRM, REVERSE RECOVERY CURRENT (A)
T = 125C J V = 400V
R
Qrr, REVERSE RECOVERY CHARGE (nC)
8000 7000 6000 5000 4000 3000 2000 1000
100A
40 35 30 25 20 15 10 5 0
50A 100A
50A 25A
25A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0 tRR IRRM
0
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
QRR
Duty cycle = 0.5 TJ = 126C
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 CJ, JUNCTION CAPACITANCE (pF)
75 100 125 150 175 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
25
50
450 400 350 300 250 200 150 100 50 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0
052-6354
Rev B
11-2008
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. diF /dt Adjust
APT50GP60LDL(G)
trr/Qrr Waveform
CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
6
5 3 2
0.25 IRRM Slope = diM/dt
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5 6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector (Cathode)
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Collector (Cathode) Emitter (Anode)
11-2008 052-6354 Rev B
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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