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| PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES * 10A , 600V, RDS(ON)=1.0@VGS=10V, ID=5.0A * * * * * * Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA * Case: TO-220AB / ITO-220AB Molded Plastic * Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP10N60 PJF10N60 MARKING P10N60 F10N60 PACKAGE TO-220AB ITO-220AB PACKING Gate 50PCS/TUBE 50PCS/TUBE Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R J C R J A P J P 1 0 N6 0 P J F 1 0 N6 0 Uni ts V V 600 +3 0 10 40 156 1 .2 5 10 40 50 0 .4 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 500 0 .8 6 2 .5 2 .5 100 O C Avalanche Energy with Single Pulse IAS=10A, VDD=50V, L=10mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE March 31,2010-REV.00 PAGE . 1 PJP10N60 / PJF10N60 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n. Typ . Ma x. Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 5.0A VDS=600V, VGS=0V V GS =+3 0 V, V D S =0 V 600 2 .0 - 0.78 - 4 .0 1.0 10 +1 0 0 V V uA n Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti me Turn-Off D e la y Ti me Turn-Off F a ll Ti me Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e Qg Q gs Q gd - 4 1 .6 8 .6 14.2 16.2 18.6 4 0 .2 2 2 .8 1520 140 12.5 52 22 32 ns 86 38 pF nC V D S =4 8 0 V, ID =1 0 A , V GS =1 0 V - t d (o n) tr t d (o ff) tf C C C i ss VDD=300V, I D =10A V GS =1 0 V, RG=25 - o ss V D S =2 5 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e -D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS I SM V SD t rr Q rr IS =1 0 A , V GS =0 V V GS =0 V, IF =1 0 A d i /d t=1 0 0 A /us - 420 4 .2 10 40 1 .4 - A A V ns uC Ma x.P uls e d S o urc e C urre nt D i o d e F o rwa rd Vo lta g e Re ve rs e Re c o ve ry Ti me Re ve rs e Re c o ve ry C ha rg e NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. March 31,2010-REV.00 PAGE . 2 PJP10N60 / PJF10N60 Typical Characteristics Curves ( Ta=25, unless otherwise noted) ID - Drain-to-Source Current (A) ID - Drain Source Current (A) 20 VGS= 20V~ 6.0V 100 VDS =50V 10 TJ = 125oC 25oC 16 12 8 4 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 5.0V 1 0.1 -55oC 0.01 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) 7 Fig.1 Output Characteristric Fig.2 Transfer Characteristric 2 RDS(ON) - On Resistance() RDS(ON) - On Resistance() 4 ID =5.0A 3 1.5 1 VGS=10V 2 TJ =25oC 0.5 VGS = 20V 1 0 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) 0 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2.8 2.4 2 1.6 1.2 0.8 0.4 2800 C - Capacitance (pF) VGS =10 V ID =5.0A 2400 2000 1600 1200 800 400 0 f = 1MHz VGS = 0V Ciss C C C Coss Crss 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.5 On Resistance vs Junction Temperature March 31,2010-REV.00 Fig.6 Capacitance PAGE. 3 PJP10N60 / PJF10N60 Typical Characteristics Curves ( Ta=25, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 Qg - Gate Charge (nC) 40 45 VDS=480V VDS=300V VDS=120V IS - Source Current (A) ID =10A 10 VGS = 0V 1 TJ = 125oC 25oC 0.1 -55oC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig.8 Source-Drain Diode Forward Voltage BVDSS - Breakdown Voltage(Normalized) 1.2 ID = 250A 1.1 1 0.9 0.8 -50 -25 TJ - Junction Temperature (oC) 0 25 50 75 100 125 150 Fig.9 Breakdown Voltage vs Junction Temperature March 31,2010-REV.00 PAGE. 4 PJP10N60 / PJF10N60 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. March 31,2010-REV.00 PAGE . 5 |
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