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| BTS7904S OptiMOS(R) -T PN Half Bridge Product Summary P V DS -30 13 -40 N 55 12 40 V m A Features * Dual p- and n-channel MOSFET * Automotive AEC Q101 qualified * Green package (RoHS compliant) * Ultra low R DS(on) * 150 C operating temperature R DS(on),max ID PG-TO220-5-13 Type BTS7904S Package PG-TO220-5-13 Marking 7904S Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions P Continuous drain current1) ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS IAS V GS P tot T j, T stg T C=25 C T C=25 C I D=20 A -40 -40 -160 350 -40 -16 / +5 96 -55 ... 150 55/150/56 Value N 40 40 160 200 40 +16 / -163) 69 mJ A V W C A Unit 1.0 page 1 2008-07-08 BTS7904S Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case SMD version, device on PCB5) P R thJC N R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-1 mA N Gate threshold voltage P V GS(th) N Zero gate voltage drain current P I DSS V GS=0 V, I D=1 mA V DS=V GS, I D=-70 A V DS=V GS, I D=40 A V DS=-18 V, V GS=0 V, T j=25 C V DS=-18 V, V GS=0 V, T j=125 C N V DS=18 V, V GS=0 V, T j=25 C V DS=18 V, V GS=0 V, T j=125 C Gate-source leakage current P I GSS N Drain-source on-state resistance P R DS(on) N P N V GS=-16 V, V DS=0 V V GS=16 V, V DS=0 V V GS=-10 V, I D=-20 A V GS=10 V, I D=20 A V GS=-4.5 V, I D=-12.5 A V GS=4.5 V, I D=20 A -30 55 -1 1.2 -1.5 1.7 -0.01 -2.1 2.2 -1 A V 1.3 1.8 62 45 K/W Values typ. max. Unit - -1 -100 - 0.01 1 - 1 -10 1 7.2 9.7 17.5 16.8 100 -100 100 13 12 21 20.5 m nA 1.0 page 2 2008-07-08 BTS7904S Parameter Symbol Conditions min. Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance P Crss N Turn-on delay time P t d(on) N Rise time P tr N Turn-off delay time P t d(off) N Fall time P tf N Gate Charge Characteristics2) Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge Gate to drain charge Gate charge Gate plateau voltage P Q gs Q gd Qg V plateau N Q gs Q gd Qg V plateau V DD=44 V, I D=40 A, V GS=0 to 10 V V DD=-24 V, I D=-40 A, V GS=0 to - 10 V -12 -30 -80 -3.0 20 32 82 4.2 -16 -45 -121 27 48 123 nC V DD=15 V, V GS=10 V N: I D=30 A, R G=2 P: I D=-30 A, R G=2 V GS=0 V, V DS=25 V, f =1 MHz 3900 4600 1000 570 850 550 22 15 94 77 104 31 150 8 5200 6100 1300 760 1300 820 ns pF Values typ. max. Unit 1.0 page 3 2008-07-08 BTS7904S Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current2) Diode pulse current P IS N P I S,pulse N Diode forward voltage P V SD V GS=0 V, I F=-40 A, T j=25 C V GS=0 V, I F=40 A, T j=25 C -1.00 T C=25 C -40 40 -160 160 -1.2 V A Values typ. max. Unit N Reverse recovery time2) P t rr N Reverse recovery charge2) P Q rr N - 0.90 41 47 -40 50 1.2 nC ns V R=15 V, I F=I S, di F/dt =400 A/s - 1.0 page 4 2008-07-08 BTS7904S 1 Power dissipation (P) P tot=f(T C), V GS6 V 2 Power dissipation (N) P tot=f(T C), V GS6 V 100 80 80 60 60 P tot [W] P tot [W] 40 20 0 0 20 40 60 80 100 120 140 160 40 20 0 0 20 40 60 80 100 120 140 160 T C [C] T C [C] 3 Drain current (P) I D=f(T C) parameter: V GS6 V 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 4 Drain current (N) I D=f(T C) parameter: V GS6 V 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 -I D [A] I D [A] T C [C] T C [C] 1.0 page 5 2008-07-08 BTS7904S 5 Safe operating area (P) I D=f(V DS); T C=25 C; D =0 parameter: t p 103 6 Safe operating area (N) I D=f(V DS); T C=25 C; D =0 parameter: t p 103 10 s 1 s 102 100 s 102 10 s 100 s 1 ms -I D [A] 101 I D [A] 1 ms 101 100 100 10-1 10 -1 10-1 10 0 10 1 10 2 10-1 100 101 102 -V DS [V] V DS [V] 7 Max. transient thermal impedance (P) Z thJC=f(t p) parameter: D =t p/T 101 8 Max. transient thermal impedance (N) Z thJC=f(t p) parameter: D =t p/T 101 100 100 0.5 Z thJC [K/W] Z thJC [K/W] 0.5 0.1 0.05 0.1 10-1 0.05 10-1 0.01 0.01 single pulse single pulse 10-2 10 -6 10-2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] t p [s] 1.0 page 6 2008-07-08 BTS7904S 9 Typ. output characteristics (P) I D=f(V DS); T j=25 C parameter: V GS 120 -10 V -5 V -4.5 V -4 V 10 Typ. output characteristics (N) I D=f(V DS); T j=25 C parameter: V GS 120 10 V 100 100 80 -3.5 V 80 -I D [A] I D [A] 60 60 5V 40 -3 V 40 4.5 V 4V 20 -2.5 V 20 3.5 V 3V 0 0 1 2 3 0 0 1 2 2.5 V 3 -V DS [V] V DS [V] 11 Typ. drain-source on resistance (P) R DS(on)=f(I D); T j=25 C parameter: V GS 50 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 C parameter: V GS 50 3V 40 40 3.5 V R DS(on) [m] R DS(on) [m] 30 30 4V 4.5 V 5V -3 V -3.5 V 20 -4 V -4.5 V 20 10 -5 V -10 V 10 10 V 0 0 10 20 30 40 50 60 70 80 0 0 10 20 30 40 50 60 70 80 -I D [A] I D [A] 1.0 page 7 2008-07-08 BTS7904S 13 Typ. transfer characteristics (P) I D=f(V GS); V DS=-6 V parameter: T j 100 14 Typ. transfer characteristics (N) I D=f(V GS); V DS=6 V parameter: T j 100 80 25 C 80 25 C 60 -55 C 60 -I D [A] I D [A] -55 C 150 C 150 C 40 40 20 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 -V GS [V] V GS [V] 15 Drain-source on-state resistance (P) R DS(on)=f(T j); I D=-20 A; V GS=-10 V 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=20 A; V GS=10 V 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 22 20 18 16 14 R DS(on) [m] R DS(on) [m] 12 10 8 6 4 2 0 -60 -20 20 60 100 140 T j [C] T j [C] 1.0 page 8 2008-07-08 BTS7904S 17 Typ. gate threshold voltage (P) V GS(th)=f(T j); V GS=V DS parameter: I D 2.5 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS parameter: I D 2.5 2 2 200 A 40 A -V GS(th) [V] -70 A V GS(th) [V] 1.5 -280 A 1.5 1 1 0.5 0.5 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [C] T j [C] 19 Typ. capacitances (P) C =f(V DS); V GS=0 V; f =1 MHz 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss Ciss Coss C [pF] 103 C [pF] Crss 103 Coss Crss 102 0 10 20 30 102 0 10 20 30 -V DS [V] V DS [V] 1.0 page 9 2008-07-08 BTS7904S 21 Forward characteristics of reverse diode (P) I F=f(V SD) parameter: T j 103 22 Forward characteristics of reverse diode (N) I F=f(V SD) parameter: T j 103 102 102 -I F [A] I F [A] 150 C 25 C 150 C 25 C 101 101 100 0 0.5 1 1.5 2 100 0 0.5 1 1.5 2 -V SD [V] V SD [V] 23 Avalanche characteristics (P) I AS=f(t AV); R GS=25 parameter: T j(start) 100 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 parameter: T j(start) 100 25 C -I AV [A] I AV [A] 125 C 100 C 10 10 125 C 100 C 25 C 1 1 10 100 1000 1 1 10 100 1000 t AV [s] t AV [s] 1.0 page 10 2008-07-08 BTS7904S 25 Typ. gate charge (P) V GS=f(Q gate); I D=-40 A pulsed parameter: V DD 12 26 Typ. gate charge (N) V GS=f(Q gate); I D=40 A pulsed parameter: V DD 12 10 -6 V -24 V 10 11 V 44 V 8 8 -V GS [V] 6 V GS [V] 0 20 40 60 80 100 6 4 4 2 2 0 0 0 20 40 60 80 100 -Q gate [nC] Q gate [nC] 27 Drain-source breakdown voltage (P) V BR(DSS)=f(T j); I D=-1 mA 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=1 mA 38 36 34 32 70 65 60 55 -V BR(DSS) [V] 30 28 26 24 22 20 -60 -20 20 60 100 140 V BR(DSS) [V] 50 45 40 35 30 -60 -20 20 60 100 140 T j [C] T j [C] 1.0 page 11 2008-07-08 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2008 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. 1.0 page 12 2008-07-08 BTS7904S Revision History Version Date Changes 1) Current is limited by bondwire. With an RthJC(HS)=1.3K/W the HS chip is able to carry ID=-80A at 25C. With an RthJC(LS)=1.8K/W the LS chip is able to carry ID=63A at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) 3) 4) Defined by design, not subject to production tests Qualified at -5V and +16V. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 1.0 page 13 2008-07-08 |
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