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| CMPT491E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT491E type is an Enhanced version of the industry standard 491 NPN silicon transistor. This device is manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. The CMPT491E features Low VCE(SAT), high hFE, and has been designed for high current general purpose amplifier applications. MARKING CODE: C49 COMPLEMENTARY TYPE: CMPT591E SOT-23 CASE FEATURED ENHANCED SPECIFICATIONS: VCE(SAT) @ 1.0A = 0.4V MAX (from 0.5V MAX) hFE @ 500mA = 200 MIN (from 100 MIN) MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB ICM PD TJ, Tstg JA otherwise noted) MIN 80 60 5.0 1.0 200 2.0 350 -65 to +150 357 UNITS V V V A mA A mW C C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless SYMBOL TEST CONDITIONS ICBO VCB=60V IEBO VEB=4.0V BVCBO IC=100A BVCEO IC=10mA BVEBO IE=100A IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=100mA VCE(SAT) VBE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=500mA hFE hFE VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=2.0A fT VCE=10V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Enhanced specification MAX 100 100 80 60 5.0 0.20 0.40 1.1 1.0 200 200 50 15 150 600 UNITS nA nA V V V V V V V 10 MHz pF R4 (27-January 2010) CMPT491E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C49 R4 (27-January 2010) w w w. c e n t r a l s e m i . c o m |
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