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| IPP50R399CP CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ON x Qg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Pb-free lead plating; RoHS compliant * Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ 560 0.399 17 V nC PG-TO220 CoolMOS CP is designed for: * Hard and soft switching SMPS topologies * DCM PFC for Lamp Ballast * PWM for Lamp Ballast, LCD & PDP TV Type IPP50R399CP Package PG-TO220 Marking 5R399P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 C T C=25 C I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V Value 9 6 20 215 0.33 3.3 50 20 30 83 -55 ... 150 60 W C Ncm 2007-11-06 A V/ns V mJ Unit A IPP50R399CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 4.9 20 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 1.5 62 K/W T sold - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) V DS=V GS, I D=0.33 mA V DS=500 V, V GS=0 V, T j=25 C V DS=500 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=4.9 A, T j=25 C V GS=10 V, I D=4.9 A, T j=150 C Gate resistance RG f =1 MHz, open drain 500 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 1 A - 10 0.36 100 0.399 nA - 0.90 2.2 Rev. 2.0 page 2 2007-11-06 IPP50R399CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 890 40 38 - pF V GS=0 V, V DS=0 V to 400 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=4.9 A, R G=35.1 81 35 14 80 14 ns Q gs Q gd Qg V plateau V DD=400 V, I D=4.9 A, V GS=0 to 10 V - 4 6 17 5.2 23 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=4.9 A, T j=25 C - 0.9 260 1.9 12.2 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. I SDI D, di /dt 400A/s, V DClink=400V, V peak 3) 4) 5) 6) Rev. 2.0 page 3 2007-11-06 IPP50R399CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 100 102 80 limited by on-state resistance 1 s 10 s 100 s 101 60 P tot [W] I D [A] 1 ms 40 10 0 DC 10 ms 20 0 0 25 50 75 100 125 150 175 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z(thJC)=f(tp); parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 30 25 20 V 10 V 100 0.5 20 7V 8V Z thJC [K/W] I D [A] 0.2 0.1 0.05 15 6V 10-1 0.02 0.01 10 5.5 V single pulse 5 5V 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.0 page 4 2007-11-06 IPP50R399CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 20 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 2.2 7V 2 20 V 15 7V 10 V 8V 1.8 6.5 V 1.6 R DS(on) [] 6V I D [A] 10 5.5 V 1.4 6V 10 V 1.2 5.5 V 5V 5 4.5 V 1 0.8 0 0 5 10 15 20 25 0.6 0 5 10 15 20 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=4.9 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1 0.9 30 25 C 25 0.8 0.7 20 150 C R DS(on) [] I D [A] 98 % typ 0.6 0.5 0.4 0.3 0.2 0.1 -60 -20 20 60 100 140 180 15 10 5 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2007-11-06 IPP50R399CP 9 Typ. gate charge V GS=f(Q gate); I D=4.9 A pulsed parameter: V DD 10 9 8 7 6 100 V 25 C, 98% 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 150 C, 98% 101 150 C 25 C 400 V V GS [V] 5 4 3 2 1 0 0 5 10 15 20 I F [A] 100 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=3.3 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 250 580 560 200 540 150 V BR(DSS) [V] E AS [mJ] 520 100 500 480 50 460 0 25 75 125 175 440 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.0 page 6 2007-11-06 IPP50R399CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 104 5 10 3 Ciss 4 3 102 Coss E oss [J] 2 1 0 200 300 400 500 0 C [pF] 101 Crss 100 0 100 V DS [V] 100 200 300 400 500 V DS [V] Rev. 2.0 page 7 2007-11-06 IPP50R399CP Definition of diode switching characteristics Rev. 2.0 page 8 2007-11-06 IPP50R399CP PG-TO220-3-1/PG-TO220-3-21: Outline Rev. 2.0 page 9 2007-11-06 IPP50R399CP Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2007-11-06 |
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