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SGP10N60A SGW10N60A
Fast IGBT in NPT-technology
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter
PG-TO-247-3
C
G
E
* NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP10N60A SGW10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s
1 2
PG-TO-220-3-1
VCE 600V 600V
IC 10A 10A
VCE(sat) 2.3V 2.3V
Tj 150C 150C
Marking G10N60A G10N60A
Package PG-TO-220-3-1 PG-TO-247-3
Symbol VCE IC
Value 600 20 10.6
Unit V A
ICpuls VGE EAS
40 40 20 70 V mJ
tSC Ptot Tj , Tstg Ts
10 92 -55...+150 260
s W C
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.5 Nov 09
SGP10N60A SGW10N60A
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJC 1.35 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 50 0A VCE(sat) V G E = 15V, I C = 10A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0A, V C E =V G E V C E = 600V ,V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 3 Typ. 2 2.3 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 5
Unit
V
A 40 1500 100 660 75 51 68 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 10A V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 10A V G E = 1 5V PG -TO -220-3-1 PG -TO -247-3-21 V G E = 1 5V,t S C 10s V C C 600V, T j 150 C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.5 Nov 09
SGP10N60A SGW10N60A
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C = 10A, V G E = 0/ 1 5V , R G = 2 5 , L 1 ) = 18 0n H , C 1 ) = 55pF Energy losses include "tail" and diode reverse recovery. 28 12 178 24 0.15 0.17 0.320 34 15 214 29 0.173 0.221 0.394 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 4 00V, I C = 10A, V G E = 0/ 1 5V , R G = 2 5 L 1 ) = 18 0n H , 1) C = 55pF Energy losses include "tail" and diode reverse recovery. 28 12 198 26 0.260 0.280 0.540 34 15 238 32 0.299 0.364 0.663 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.5 Nov 09
SGP10N60A SGW10N60A
50A T C =80c
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
Ic
t p = 5s
40A 30A 20A 10A T C =110c
10A
15s 50s
1A
200s 1m s DC
1V 10V 100V 1000V
Ic
0,1A
0A 10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
12 0W
25A
10 0W
20A
8 0W
IC, COLLECTOR CURRENT
POWER DISSIPATION
15A
6 0W
10A
4 0W
Ptot,
2 0W
5A
0W 25 C
50C
75 C
1 00C
125 C
0A 2 5 C
5 0 C
7 5 C
1 0 0 C
1 2 5 C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
35A 30A
35A 30A
IC, COLLECTOR CURRENT
25A V GE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
25A V GE= 20 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
35A 30A
3,5V
T j=+25C +150C
I C = 20A
3,0V
IC, COLLECTOR CURRENT
25A 20A 15A 10A 5A 0A 0V
2,5V
I C = 10 A
2,0V
I C =5A
2V
4V
6V
8V
10V
1,5V 0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
t d(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
100ns
t d (o ff)
tf td(on) tr
10ns 0A
tf t d (o n )
10ns 0
tr
20 40 60 80
5A
10A
15A
20A
25A
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E)
5 ,5 V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5 ,0 V 4 ,5 V 4 ,0 V 3 ,5 V 3 ,0 V 2 ,5 V 2 ,0 V 1 ,5 V 1 ,0 V -5 0 C 0C 50C 100C 150C m in . ty p . m ax.
t d(o ff)
t, SWITCHING TIMES
100ns
t d(o n) tf tr
50C 100C 150C
10ns 0C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25, Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
6
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
1,6m J 1,4m J
*) Eon and Ets include losses due to diode recovery.
1,0m J
*) Eon and Ets include losses due to diode recovery.
E ts *
E, SWITCHING ENERGY LOSSES
1,2m J 1,0m J 0,8m J 0,6m J 0,4m J 0,2m J 0,0m J 0A
E, SWITCHING ENERGY LOSSES
E ts *
0,8m J
E on * E off
0,6m J
E off
0,4m J
E on *
5A
10A
15A
20A
25A
0,2m J 0
20
40
60
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 25, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E)
0,8mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
*) Eon and Ets include losses due to diode recovery.
10 K/W D=0.5 0.2 10 K/W
-1
0
E, SWITCHING ENERGY LOSSES
0,6mJ
0.1 0.05 0.02
0,4mJ
E ts*
0,2mJ
R,(K/W) 0.4287 0.4830 0.4383
R1
, (s) 0.0358 -3 4.3*10 -4 3.46*10
R2
-2 10 K/W 0.01
E off E on*
single pulse 10 K/W 1s
-3
C 1 = 1 /R 1 C 2 = 2 /R 2
0,0mJ 0C
50C
100C
150C
10s
100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25, Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
25V
1nF C iss
20V
VGE, GATE-EMITTER VOLTAGE
15V
120V 480V
C, CAPACITANCE
100pF C oss C rss
10V
5V
0V 0nC
25nC
50nC
75nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
200A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
150A
15 s
100A
10 s
50A
5 s
0 s 10V
11V
12V
13V
14V
15V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
PG-TO220-3-1
9
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
10
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
TC
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =55pF.
11
Rev. 2.5
Nov 09
SGP10N60A SGW10N60A
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
12
Rev. 2.5
Nov 09

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