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 WTK6680
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 11.5 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE
D
1 2 3 4
S S S G
8 7 6 5
D D D
Description:
The WTK6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
1
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SOP-8
Features:
*Low On-Resistance *High Vgs Max Rating Voltage *Surface Mount Package
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 30 20 11.5 9.5 50 2.5 0.02 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Device Marking
WTK6680 = 6680SC
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WTK6680
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 30 1.0 -
Typ. 0.02 30 16.8 4.2 8 8.9 7.3 25.6 18.6 1450 285 180
Max. 3.0 100 1 25 11 18 -
Unit V V/ : V S nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=15V, ID=11.5A VGS= 20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=11.5A VGS=4.5V, ID=9.5A ID=11.5A VDS=15V VGS=5V VDS=15V ID=1A VGS=10V RG=5.5 RD=10 VGS=0V VDS=25V f=1.0MHz
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD IS
Min. -
Typ. -
Max. 1.3 1.92
Unit V A
Test Conditions IS=3.5A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.3V
Continuous Source Current (Body Diode)
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad.
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WTK6680
WE IT R ON
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WTK6680
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of Reverse Diode
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Fig 12. Gate Threshold Voltage v.s. Junction Temperature 4/6 15-Aug-08
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WTK6680
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
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WTK6680
SO-8 Package Outline Dimensions
Unit:mm
1
L
E1 D 7 (4X) A C 7(4X)
2A
A1
e
B
eB
SYMBOLS
MILLIMETERS MAX MIN
A A1 B C D E1 eB e L
1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8
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