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| NPN BUX12 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX12 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB Pt TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Ratings IB = 0 IE = 0 IC = 0 VBE = -1.5V tp = 10ms @ TC = 25 Value 250 300 7.0 300 20 25 4 150 200 -65 to +200 Unit V V V V A A A Watts C C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case Value 1.17 Unit C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) VEB0(SUS) ICEO ICEX IEBO Ratings Collector-Emitter Sustaining Voltage (1) Emitter-Base Breakdown Voltage (1) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC=200 mA Test Condition(s) Min Typ Mx Unit 250 7 1.5 1.5 6 1 V V mA mA mA IC=0A , IE=50 mA VCE=200 V , IB=0A VCE= VCEX , VBE= -1.5V VCE= VCEX , VBE= -1.5V, Tcase = 125C VEB=5.0 V, IC=0 COMSET SEMICONDUCTORS 1/2 NPN BUX12 hFE VCE(SAT) VBE(SAT) DC Current Gain (1) Collector-Emitter saturation Voltage (1) Base-Emitter saturation Voltage (1) IC=5 A , VCE=4.0 V IC=10 A , VCE=4.0 V IC=5 A , IB=0.5 A IC=10 A , IB=1.25 A IC=10 A , IB=1.25 A 20 10 - 0.22 0.5 1.23 60 1 1.5 1.5 - V Symbol IS/B ES/B fT ton ts tf Ratings Second breakdown collector current Clamped ES/B Collector current Transition frequency Turn-on time Storage time File time Test Condition(s)Sec VCE=30 V , ts = 1s VCE=140 V , ts = 1s Vclamp=250 V , L=500 H VCE=15 V , IC=1 A , f=10 MHz IC=10 A , IB=1.25 A , VCC=150 V Min Typ Mx Unit 5 0.15 10 8 0.28 1.45 0.23 1 2 0.5 s A A MHz IC=10 A , VCC=150 V IB1 = -IB2 =1.25 A (1) Pulse Duration = 300 s, Duty Cycle <= 2% MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Emitter Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/2 |
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