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| CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual, enhanced specification transistors in a space saving SOT-563 package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMLT3904E: CMLT3906E: CMLT3946E: CMLT3904EG*: CMLT3906EG*: CMLT3946EG*: L04 L06 L46 C4G C6G 46G SOT-563 CASE * Device is Halogen Free by design ENHANCED SPECIFICATIONS: BVCBO from 40V MIN to 60V MIN (PNP) BVEBO from 5.0V MIN to 6.0V MIN (PNP) MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance hFE from 60 MIN to 70 MIN (NPN/PNP) VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN) from 0.4V MAX to 0.2V MAX (PNP) SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg JA UNITS V V V mA mW mW mW C C/W 60 40 6.0 200 350 300 150 -65 to +150 357 Enhanced Specification Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN TYP TYP MAX ICEV VCE=30V, VEB=3.0V 50 BVCBO IC=10A 60 115 90 BVCEO IC=1.0mA 40 60 55 BVEBO IE=10A 6.0 7.5 7.9 VCE(SAT) IC=10mA, IB=1.0mA 0.057 0.050 0.100 VCE(SAT) IC=50mA, IB=5.0mA 0.100 0.100 0.200 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.75 0.75 0.85 VBE(SAT) IC=50mA, IB=5.0mA 0.85 0.85 0.95 hFE VCE=1.0V, IC=0.1mA 90 240 130 hFE VCE=1.0V, IC=1.0mA 100 235 150 hFE VCE=1.0V, IC=10mA 100 215 150 300 hFE VCE=1.0V, IC=50mA 70 110 120 hFE VCE=1.0V, IC=100mA 30 50 55 - UNITS nA V V V V V V V R4 (20-January 2010) CMLT3904E CMLT3904EG* NPN CMLT3906E CMLT3906EG* PNP CMLT3946E CMLT3946EG* NPN/PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25C) SYMBOL TEST CONDITIONS MIN fT VCE=20V, IC=10mA, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 NF VCE=5.0V, IC=100A, RS =1.0k f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA MAX 4.0 8.0 12 10 400 60 4.0 35 35 200 50 UNITS MHz pF pF k x10-4 S dB ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 CMLT3904E CMLT3904EG* * Device is Halogen Free by design CMLT3906E CMLT3906EG* CMLT3946E CMLT3946EG* R4 (20-January 2010) w w w. c e n t r a l s e m i . c o m |
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