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STP75NF68
N-channel 68 V, 0.010 , 80 A, TO-220 STripFETTM II Power MOSFET
Features
Type STP75NF68

VDSS 68 V
RDS(on) max < 0.014
ID 80 A
Exceptional dv/dt capability 100% avalanche tested
1 3 2
Application
TO-220
Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable in advanced high-efficiency switching applications. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 75NF68 Package TO-220 Packaging Tube
Order code STP75NF68
August 2008
Rev 2
1/12
www.st.com 12
Contents
STP75NF68
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STP75NF68
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 68 20 80 56 320 190 1.27 13 700 -55 to 175 175 Unit V V A A A W W/C V/ns mJ C C
PTOT
dv/dt (2) Peak diode recovery voltage slope EAS
(3)
Single pulse avalanche energy Storage temperature Operating junction temperature
Tstg TJ
1. Pulse width limited by safe operating area 2. ISD 80 A, di/dt 300 A/s, VDD V(BR)DSS, TJ TJMAX 3. Starting TJ = 25 oC, ID = 40 A, VDD = 34 V
Table 3.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose(1) Value 0.79 62.5 300 Unit C/W C/W C
1. 1.6mm from case for 10 sec
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Electrical characteristics
STP75NF68
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 40 A 2 3 0.010 Min. 68 1 10 100 4 0.014 Typ. Max. Unit V A A nA V
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V, ID = 40 A VDS =25 V, f = 1 MHz, VGS = 0 Min. Typ. 60 2550 550 175 75 17 30 Max. Unit S pF pF pF nC nC nC
VDD = 34 V, ID = 80 A VGS =10 V
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STP75NF68
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 34 V, ID= 40 A, RG=4.7 , VGS=10 V Figure 13 on page 8 Min. Typ. 17 60 90 75 Max. Unit ns ns ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/s, VDD = 25 V, TJ = 150 C Figure 15 on page 8 70 160 4.7 Test conditions Min Typ. Max 80 320 1.5 Unit A A V ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP75NF68
2.1
Figure 2.
ID (A)
Electrical characteristics (curves)
Safe operating area
AM00935v1
Figure 3.
Thermal impedance
Operation in this area is limited by max RDS(on)
100
100s
10
1ms 10ms
1
0.1 0.1
1
10
VDS(V)
Figure 4.
ID (A) 250 200 150 100 50
Output characteristics
AM00936v1 VGS=10V 8V 7V
Figure 5.
ID (A) 250 200 150
6V
Transfer characteristics
AM00937v1 VDS=15V
100 50
5V
0
0
5
10
15 VDS(V)
0
0
1
2
3
4
5
6
7 VGS(V)
Figure 6.
Normalized BVDSS vs temperature
AM00957v1
Figure 7.
RDS(on) () 10.5 10
Static drain-source on resistance
AM00951v1
VBR(DSS) (norm) 1.2
VGS=0 ID=250A
1.1 9.5 1.0 9 0.9 8.5 8 -50 0 50 100 TJ(C) 0
0.8
20
40
60
80
ID(A)
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STP75NF68 Figure 8.
VGS (V) 12 10 4000 8 3000 6 4 2 0 80 2000 Crss 1000 VDD=34V ID=80A
Electrical characteristics Gate charge vs gate-source voltage Figure 9.
AM00952v1
Capacitance variations
AM00953v1
C(pF) TJ=25C 5000 f=1MHz
Ciss
Coss 20 40 60 Qg(nC) 0 0 10 20 30 40 50 60 Qg(nC)
0
Figure 10. Normalized gate threshold voltage vs temperature
AM00954v1
Figure 11. Normalized on resistance vs temperature
AM00955v1
VGS(th) (norm) 1.0
VDS=VGS ID=250A
RDS(on) (norm) 1.8 VGS=10V ID=40A
0.9
1.4
0.8
1.0
0.7
0.6
0.6
-50
0
50
100
TJ(C)
0.2
-50
0
50
100
TJ(C)
Figure 12. Source-drain diode forward characteristics
AM00956v1
VSD (V) 1.1 TJ=-55C
0.9
0.7
25C
0.5 175C 0.3 0 20 40 60 80 ISD(A)
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Test circuits
STP75NF68
3
Test circuits
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
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STP75NF68
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP75NF68
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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STP75NF68
Revision history
5
Revision history
Table 8.
Date 24-Jul-2008 06-Aug-2008
Document revision history
Revision 1 2 First release Document status promoted from preliminary data to datasheet Changes
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STP75NF68
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