View ZXTP25015DFH_5045613.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

ZXTP25015DFH 15V, SOT23, PNP medium power transistor
Summary
BVCEO > -15V BVECO > -3V IC(cont) = -4A RCE(sat) = 33m VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * * * High power dissipation SOT23 package High peak current Low saturation voltage 15V forward blocking voltage 3V reverse blocking voltage
E
Applications
* * * * * MOSFET and IGBT gate driving DC - DC converters Motor drive High side driver Load disconnect switch
E C B Pinout - top view
Ordering information
Device ZXTP25015DFHTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000
Device marking
1A7 Issue 2 - March 2008
(c) Zetex Semiconductors plc 2008
1
www.zetex.com
ZXTP25015DFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(b) Base current Peak pulse current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD PD Symbol VCBO VCEO VECO VEBO IC IB ICM PD Limit -15 -15 -3 -7 -4 -1 -10 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
Issue 2 - March 2008
(c) Zetex Semiconductors plc 2008
2
www.zetex.com
ZXTP25015DFH
Characteristics
Issue 2 - March 2008
(c) Zetex Semiconductors plc 2008
3
www.zetex.com
ZXTP25015DFH
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (base open) Collector-base cut-off current Emitter-base cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO BVECO ICBO IEBO VCE(sat) Min. -15 -15 -7 -3 Typ. -35 -30 -8.4 -8.2 <-1 <-1 -45 -110 -130 -160 -165 Base-emitter saturation voltage Base-emitter turn-on voltage VBE(sat) VBE(on) 300 200 90 -930 -810 450 315 145 30 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 295 25 33.8 43.5 196 51.7
300 s; duty cycle 2%.
Max.
Unit V V V V
Conditions IC = -100 A IC = -10mA (*) IE = -100 A IE = -100 A(*) VCB = -12V VCB = -12V, Tamb= 100C VEB = -5.6V IC = -1A, IB = -100mA(*) IC = -1A, IB = -10mA(*) IC = -2A, IB = -40mA(*) IC = -4A, IB = -200mA(*) IC = -5A, IB = -500mA(*) IC = -4A, IB = -200mA(*) IC = -4A, VCE = -2V(*) IC = -10mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -4A, VCE = -2V(*) IC = -10A, VCE = -2V(*)
-50 -20 -50 -55 -150 -175 -210 -220 -1050 -900 900
nA A nA mV mV mV mV mV mV mV
Static forward current transfer hFE ratio
MHz IC = -50mA, VCE = -10V f = 100MHz 30 pF ns ns ns ns VCB = -10V, f = 1MHz(*) VCC = -15V. IC = -750mA, IB1 = IB2= -15mA
NOTES: (*) Measured under pulsed conditions. Pulse width
Issue 2 - March 2008
(c) Zetex Semiconductors plc 2008
4
www.zetex.com
ZXTP25015DFH
Typical characteristics
Issue 2 - March 2008
(c) Zetex Semiconductors plc 2008
5
www.zetex.com
ZXTP25015DFH
Package outline - SOT23
E
e b 3 leads e1
L1
E1
D
A A1 L c
Dim. A A1 b c D e
Millimeters Min. 0.01 0.30 0.085 2.80 Max. 1.12 0.10 0.50 0.20 3.04 -
Inches Min. 0.0004 0.012 0.003 0.110 Max. 0.044 0.004 0.020 0.008 0.120
Dim. e1 E E1 L L1 -
Millimeters Min. 2.10 1.20 0.25 0.45 Max. 2.64 1.40 0.60 0.62 1.90 NOM
Inches Min. 0.083 0.047 0.0098 0.018 Max. 0.104 0.055 0.0236 0.024 0.075 NOM
0.95 NOM
0.037 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Kustermann-Park D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 - March 2008
(c) Zetex Semiconductors plc 2008
6
www.zetex.com

▲Up To Search▲

Price & Availability of ZXTP25015DFH

	To Download ZXTP25015DFH Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .