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| UNISONIC TECHNOLOGIES CO., LTD D882SS MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS NPN SILICON TRANSISTOR APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Normal D882SS -x-AE3-R Ordering Number Lead Free Halogen Free D882SSL-X-AE3-R D882SSG -x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright (c) 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-018,D D882SS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Ta=25C Collector Dissipation TC=25C SYMBOL VCBO VCEO VEBO IC ICP IB PC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25C, unless otherwise specified ) RATINGS 40 30 5 3 7 0.6 350 10 UNIT V V V A A A mW W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz MIN 40 30 5 TYP MAX UNIT V V V nA nA 1000 1000 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF Note: Pulse test: PW<300s, Duty Cycle<2% CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R206-018,D D882SS TYPICAL CHARACTERISTICS Static Characteristics 150 Collector Current, Ic (A) 1.6 IB=9mA Derating, IC (%) IB=8mA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA 0.4 0 0 IB=2mA IB=1mA 4 8 12 16 Collector-Emitter Voltage (V) Current Gain-Bandwidth Product Current Gain- Bandwidth Product, FT(MHz) 10 3 NPN SILICON TRANSISTOR Derating Curve of Safe Operating Areas 1.2 0.8 100 S/ b lim ite n io at ip ss Di d 50 lim d ite 20 0 -50 0 50 100 150 Case Temperature, TC (C) Safe Operating Area 200 10 Collector Current, IC (A) 1 0. 10 mS 1m S 1m S 102 VCE=5V 100 IC(max), DC IB=8mA 10 1 10-1 IC(max), Pulse 10 0 10 -2 -2 10 10 -1 10 0 10 1 100 101 Collector-Emitter Voltage Saturation Voltage 102 Collector Current, Ic (A) DC Current Gain 103 Saturation Voltage (mV) 104 VBE(SAT) 103 DC Current Gain, hFE 102 VCE=2V 102 VCE(SAT) 101 101 100 100 10 1 10 3 10 4 100 100 101 102 103 104 Collector Current, IC (mA) Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-018,D D882SS TYPICAL CHARACTERISTICS(Cont.) NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-018,D |
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