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FDW254P
June 2008
FDW254P
P-Channel 1.8V Specified PowerTrench(R) MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V - 8V).
Features
* -9.2 A, -20 V. RDS(ON) = 12 m @ VGS = -4.5 V RDS(ON) = 15 m @ VGS = -2.5 V RDS(ON) = 21.5 m @ VGS = -1.8 V
Applications
* Load switch * Motor drive * DC/DC conversion * Power management
* Rds ratings for use with 1.8 V logic * Low gate charge * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
D S S D G S S D
5 6 7 8
Pin 1
4 3 2 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25 C unless otherwise noted
o
Parameter
Ratings -20
8
(Note 1)
Units
V V A W C
-9.2 -50
1.3 0.6
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
-55 to +150
96 208
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
C/W
Package Marking and Ordering Information
Device Marking 254P Device FDW254P Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2008 Fairchild Semiconductor Corporation
FDW254P Rev D1 (W)
FDW254P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = -8 V, VGS = 8 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
-20
Typ
Max Units
V
Off Characteristics
-11 -1 -100 100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -9.2 A VGS = -2.5 V, ID = -7.9 A VGS = -1.8 V, ID = -6.5 A VGS=-4.5 V, ID =-9.2 A, TJ=125C VGS = -4.5 V, VDS = -5 V, VDS = -5 V ID = -9.2 A
-0.4
-0.6 2 9 11 14 12
-1.5
V mV/C
12 15 21.5 18
m
ID(on) gFS
On-State Drain Current Forward Transconductance
-50 54
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = -10 V, f = 1.0 MHz
V GS = 0 V,
5878 994 559
pF pF pF
Switching Characteristics
td(on) Tr Td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = -10 V, VGS = -4.5 V,
ID = -1 A, RGEN = 6
15 15 210 100
27 27 336 160 96
ns ns ns ns nC nC nC
VDS = -10 V, VGS = -4.5 V
ID = -9.2 A,
60 7 13
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.2 A
(Note 2)
-1.2 -0.5 -1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 96C/W (steady state) when mounted on a 1 inch copper pad on FR-4. b) RJA is 208C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDW254P Rev. D1 (W)
FDW254P
Typical Characteristics
50 VGS = -4.5V 40 -3.0V -2.5V 30 -2.0V -1.5V
2 VGS = -1.5V 1.8 1.6 1.4 -2.0V -2.5V -3.0V -3.5V 1 0.8
0 0.5 1 1.5 2
20
1.2
10
-4.5V
0
0
10
20
30
40
50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.035
1.5 1.4 1.3 ID = -9.2A VGS = -4.5V
ID = -4.6A 0.03 0.025
1.2 1.1 1 0.9 0.01 0.8 0.7 -50 -25 0 25 50 75 100
o
0.02 TA = 125 C 0.015
o
TA = 25 C 0.005 125 150 0 1 2 3 4 5
o
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
50 VDS = -5V 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
TA = -55 C
o
25 C 125 C
o
o
VGS = 0V 10 TA = 125 C
o
30
1 25 C
o
20
0.1 -55 C
o
10
0.01
0 0.5 1 1.5 2
0.001 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW254P Rev. D1 (W)
FDW254P
Typical Characteristics
5 ID = -9.2A 4
VDS = -6V -8V
10000 f = 1 MHz VGS = 0 V 8000
-10V
CISS 6000
3
2
4000 COSS 2000 CRSS
0 10 20 30 40 50 60 70
1
0
0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
(c)2008 Fairchild Semiconductor Corporation
Figure 8. Capacitance Characteristics.
50
FDW254P Rev D1 (W)
100
RDS(ON) LIMIT 10 10s 1 VGS = -4.5V SINGLE PULSE RJA = 208 C/W TA = 25 C 0.01 0.01 0.1 1
o o
100s 10ms 100ms 1s
40
SINGLE PULSE RJA = 208C/W TA = 25C
30
DC 20
0.1
10
0 10 100 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) + RJA RJA = 208 C/W P(pk)
0.01
t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.1 t1, TIME (sec) 1 10 100 1000
0.001 0.0001 0.001 0.01
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW254P Rev. D1 (W)
FDW254P
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I35
FDW254P Rev. D1 (W)
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production

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