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| IGC142T120T6RH IGBT4 High Power Chip FEATURES: * 1200V Trench + Field Stop technology * low VCEsat * soft turn off * positive temperature coefficient * easy paralleling This chip is used for: * medium / high power modules C Applications: * medium / high power drives G E Chip Type VCE ICn Die Size 11.31 x 12.56 m m 2 Package sawn on foil IGC142T120T6RH 1200V 150A MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.31 x 12.56 11.04 x 9.80 1.31 x 0.81 142.1 / 113.1 140 150 90 94 Photoimide 3200 nm AlSiCu Ni Ag -system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500m 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C m mm grd mm 2 Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007 IGC142T120T6RH MAXIMUM RATINGS Parameter Collector-Emitter voltage , T j=25 C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate -Emitter voltage Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150C Reverse bias safe operating area 2 ) (RBSOA) 1) 2) Symbol VC E IC Ic p u l s VG E Tj tp Value 1200 1) Unit V A A V C s 450 20 -40 ... +175 10 IC max = 300A, VCE max = 1200V, Tvj max= 150C depending on thermal properties of assembly not subject to production test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj =25 C Value Parameter Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate -Emitter threshold voltage Zero gate voltage collector current Gate -Emitter leakage current Integrated gate resistor Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES RGint Conditions min. VGE=0V , I C= 6 mA VGE=15V, IC=150A IC =6mA , VGE =VCE VCE=1200V , VGE =0V VC E=0V , VGE =20V 5 1200 1.5 5.0 1.7 5.8 2.0 6.5 20 600 A nA V typ. max. Unit ELECTRICAL CHARACTERISTICS (not subject to production test - verified by design/characterization) Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol C iss C oss C rss Conditions VC E = 2 5 V , V GE =0V, f=1MHz Value min. typ. 9300 580 510 pF max. Unit Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007 IGC142T120T6RH SWITCHING CHARACTERISTICS inductive l oad (not subject to production test - verified by design /characterization) Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) Symbol td ( o n ) tr td ( o f f ) tf Conditions 1) Value min. typ. tbd tbd max. Unit T j = 1 2 5C VC C =600V, I C =150A, V GE =- 1 5 / 1 5 V , R G= - - - ns tbd tbd values also influenced by parasitic L- and C- in measurement and package. Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007 IGC142T120T6RH CHIP DRAWING Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007 IGC142T120T6RH FURTHER ELECTRICAL CHARACTERISTICS This chip data sheet refers to the device data sheet tbd DESCRIPTION AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall not b e considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies compo nents may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7693A, Edition 1, 31.10 .2007 |
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