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| GWM 180-004X2 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data G1 S1 L+ G3 S3 G5 S5 L1 L2 L3 G4 S4 G6 S6 L- VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW Straight leads Surface Mount Device G2 S2 MOSFETs Symbol VDSS VGS ID25 ID90 ID110 IF25 IF90 IF110 Symbol TC = 25C TC = 90C TC = 110C TC = 25C (diode) TC = 90C (diode) TC = 110C (diode) Conditions Conditions TJ = 25C to 150C Maximum Ratings 40 20 180 136 120 182 112 88 V V A A A A A A Applications AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. 1.9 2.8 2.5 TJ = 25C TJ = 125C 50 0.2 110 33 30 150 240 350 170 0.12 0.51 0.003 1.3 1.0 1.6 max. 2.5 4.5 5 mW mW V A A A nC nC nC ns ns ns ns mJ mJ mJ K/W K/W RDSon 1) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH 1) on chip level at VGS = 10 V; ID = 100 A VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V VGS = 20 V; VDS = 0 V TJ = 25C TJ = 125C VGS = 10 V; VDS = 20 V; ID = 100 A inductive load VGS = +10/0 V; VDS = 24 V ID = 135 A; RG = 39 ; TJ = 125C with heat transfer paste (IXYS test setup) VDS = ID*(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307c (c) 2011 IXYS All rights reserved 1-6 GWM 180-004X2 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. VSD trr QRM IRM (diode) IF = 100 A; VGS = 0 V IF = 100 A; -diF/dt = 600 A/s VR = 15 V; TVJ = 125C typ. 0.9 38 0.31 14 max. 1.2 V ns C A Component Symbol IRMS TJ Tstg VISOL FC Symbol IISOL < 1 mA, 50/60 Hz, f = 1 minute mounting force with clip Conditions Conditions per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings 300 -55...+175 -55...+125 1000 50 - 250 A C C V~ N Characteristic Values min. typ. 1.0 160 25 max. mW Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 CP Weight 1) coupling capacity between shorted pins and mounting tab in the case pF g VDS = ID*(RDS(on) + RPin to Chip) IXYS reserves the right to change limits, test conditions and dimensions. 20110307c (c) 2011 IXYS All rights reserved 2-6 GWM 180-004X2 Straight Leads 37,5 +0,20 (11x) 3 0,05 1,5 1 0,05 GWM 180-004X2-SL 5 0,05 1 0,05 0,5 0,02 25 +0,20 53 0,15 2,1 4,5 12 0,05 4 0,05 (3x) 6 0,05 Surface Mount Device 37,5 +0,20 1,5 (11x) 3 0,05 1 0,05 GWM 180-004X2-SMD 5 0,05 0,5 0,02 R1 0,2 25 +0,20 39 0,15 4,5 12 0,05 4 0,05 (3x) 6 0,05 2,1 1 0,05 5 0,10 5 2 Leads Straight SMD Ordering Standard Standard Part Name & Packing Unit Marking GWM 180-004X2 - SL GWM 180-004X2 - SMD Part Marking GWM 180-004X2 GWM 180-004X2 Delivering Mode Blister Blister Base Qty. 28 28 Ordering Code 508 772 508 786 20110307c IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 3-6 GWM 180-004X2 1.2 400 IDSS = 0.25 mA 1.1 350 300 VDS = 16 V VDSS 1.0 normalized ID [A] 250 200 150 100 50 TJ = 125C TJ = 25C 0 1 2 3 4 5 6 7 8 9 0.9 0.8 0.7 -25 0 25 50 75 100 125 150 0 TJ [C] VGS [V] Fig. 1 Drain source breakdown voltage VDSS versus junction temperature TVJ Fig. 2 Typical transfer characteristic 400 300 VGS = 20 V 15 V 10 V 400 TVJ = 25C 7V 300 VGS = 20 V 15 V 10 V TVJ = 125C 7V 6.5 V 200 6V 100 5.5 V 5V ID [A] 6.5 V 200 6V 100 5.5 V 5V 0 ID [A] 0 1 2 3 4 0 0 1 2 3 4 VDS [V] VDS [V] Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic 2.5 2.0 VGS = 10 V ID = 135 A RDS(on) 5 4.0 3.5 3.0 5V 5.5 V 6 V 6.5 V 7V TVJ = 125C 4 RDS(on) norm. 1.5 3 RDS(on) m 1.0 RDS(on) normalized 0.5 2 RDS(on) norm. 2.0 1.5 VGS = 10 V 15 V 20 V 2.5 1 1.0 0.5 0.0 -25 0 25 50 75 100 125 0 150 0 100 200 300 400 TVJ [C] ID [A] Fig. 5 Typ. drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. Fig. 6 Typ. drain source on-state resistance RDS(on) versus ID 20110307c (c) 2011 IXYS All rights reserved 4-6 GWM 180-004X2 12 10 8 200 ID = 135 A TVJ = 25C 180 160 140 VGS [V] 6 4 2 0 VDS = 15 V VDS = 28 V 120 ID 100 [A]80 60 40 20 0 20 40 60 80 100 120 0 0 25 50 75 100 125 150 175 200 QG [nC] TC [C] Fig. 7 Gate charge characteristics Fig. 8 Drain current ID vs. temperature TC 0.4 VDS = 15 V VGS = +10/0 V 0.3 RG = 39 TVJ = 125C tr 400 0.6 0.5 600 500 400 td(off) 300 Eon, Erec(off) 0.2 t td(on) 200 Eoff [mJ] 0.4 VDS = 15 V VGS = +10/0 V 0.3 RG = 39 TVJ = 125C 0.2 0.1 t 300 200 100 [mJ] 0.1 [ns] 100 [ns] tf Eon 10x Erec(off) 0.0 0 40 80 120 160 200 0 0.0 Eoff 0 40 80 120 160 200 0 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching ID [A] Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching 1.0 VDS = 15 V VGS = +10/0 V ID = 135 A TJ = 125C tr 500 1.0 VDS = 15 V VGS = +10/0 V ID = 135 A TVJ = 125C td(off) 1000 0.8 400 td(on) 300 t [ns] 0.8 800 Erec(on) 0.6 [mJ] 0.4 0.2 Eon 0.0 0 20 40 Erec(on) x10 60 80 100 Eon, 200 Eoff [mJ] 0.6 Eoff 0.4 tf 600 t [ns] 400 100 0.2 200 0 120 0.0 0 20 40 60 80 100 0 120 RG [] RG [] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110307c (c) 2011 IXYS All rights reserved 5-6 GWM 180-004X2 20 IF = 50 A 100 A 150 A 48 VR = 15 V TVJ = 125C 16 44 trr [ns] IRM 12 40 150 A 100 A 50 A [A] 8 36 4 32 200 300 400 500 600 700 800 0 200 300 400 500 600 700 800 -diF /dt [A/s] -diF /dt [A/s] Fig. 13 Reverse recovery time trr of the body diodes vs. di/dt Fig. 14 Reverse recovery current IRM of the body diodes versus di /dt 0.6 0.5 0.4 400 350 Qrr 0.3 IF = 50 A 100 A 150 A 300 IS [A] 250 200 150 100 TJ = -25C 25C 125C 150C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 [C] 0.2 0.1 0.0 200 50 400 600 800 0 0.0 -diF /dt [A/s] VSD [V] Fig. 15 Reverse recovery charge Qrr of the body diodes versus di/dt Fig. 16 Source current IS versus source drain voltage VSD (body diode) 0.7 0.6 0.5 Zth 0.4 [K/W] 0.3 0.2 Fig. 17 Definition of switching times 0.1 0.0 0.001 0.01 0.1 1 10 t [s] IXYS reserves the right to change limits, test conditions and dimensions. 20110307c (c) 2011 IXYS All rights reserved 6-6 |
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