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MGSF2N02EL Power MOSFET 2.8 Amps, 20 Volts
N-Channel SOT-23
These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.
Features http://onsemi.com
* Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Miniature SOT-23 Surface Mount Package Saves Board Space * IDSS Specified at Elevated Temperature
Applications
2.8 AMPS 20 VOLTS RDS(on) = 85 mW (max)
N-Channel D
* DC-DC Converters * Power Management in Portable and Battery Powered Products, ie:
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25C - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Ambient (Note 1) Thermal Resistance - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. 1" Pad, t < 10 sec. 2. Min pad, steady state. Symbo l VDSS VGS ID IDM PD TJ, Tstg RJA Value 20 8.0 2.8 5.0 1.25 - 55 to 150 100 300 TL 260 C W C C/W
1 2
G
Unit Vdc Vdc A
3
S
MARKING DIAGRAM
SOT-23 CASE 318 STYLE 21
NT W
NT W
= Device Code = Work Week
PIN ASSIGNMENT
3
Drain
1
2
Gate
Source
ORDERING INFORMATION
Device MGSF2N02ELT1 MGSF2N02ELT3
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Package SOT-23 SOT-23
Shipping 3000 Tape & Reel 10,000 Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2002
1
April, 2002 - Rev. 1
Publication Order Number: MGSF2N02EL/D
MGSF2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 10 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Source Leakage Current (VGS = $ 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate-Source Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 3.6 A) (VGS = 2.5 Vdc, ID = 3.1 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 16 Vd ID = 1.75 Adc, Vdc, 1 75 Ad VGS = 4.0 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward Voltage (IS = 1.0 Adc, VGS = 0 Vdc) (Note 3) Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dlS/ dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD - - - - - - 0.76 - 104 42 62 0.20 1.2 - - - - - mC ns V (VDD = 16 Vdc, ID = 2.8 Adc, Vgs = 4.5 V, RG = 2.3 W) td(on) tr td(off) tf QT Qgs Qgd - - - - - - - 6.0 95 28 125 3.5 0.6 1.5 - - - - - - - nC ns (VDS = 5.0 Vdc, VGS = 0 V 5 0 Vdc V, f = 1.0 MHz) Ciss Coss Crss - - - 150 130 45 - - - pF VGS(th) 0.5 - RDS(on) - - 78 105 85 115 - -2.3 1.0 - Vdc mV/C mW V(BR)DSS 20 - IDSS - - IGSS - - - - 1.0 10 "100 nA - 22 - - Vdc mV/C mAdc Symbol Min Typ Max Unit
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MGSF2N02EL
8 ID, DRAIN CURRENT (AMPS) 5 ID, DRAIN CURRENT (AMPS) VGS = 10 V VGS = 7 V VGS = 5 V TJ = 25C VGS = 2.2 V 4 VDS w 10 V
6
VGS = 2.6 V 4 VGS = 3 V 2
VGS = 2.0 V VGS = 1.8 V VGS = 1.6 V VGS = 1.2 V
3
2 TJ = 100C 1
TJ = 55C
0 0
0 0.5 1 1.5 2 2.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
0
0.5
1
1.5
2
2.5
3
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
0.3
Figure 2. Transfer Characteristics
0.12 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = 25C 0.10 ID = 3.6 A
TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0.2
0.08
0.06
0.1
VGS = 2.5 V
0.04
0.02 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V)
0 4 5 6 7 8 -ID, DRAIN CURRENTS (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
Figure 4. On-Resistance vs. Gate Voltage
1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 3.6 A VGS = 4.5 V
10000 VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150C 1000
1.5
1.2
0.9
100
TJ = 100C
0.6 -50
-25
0
25
50
75
100
125
150
10 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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MGSF2N02EL
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (V) 350 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 0 4 8 12 16 20 Ciss Coss Crss TJ = 25C 5 QT 4
3 Q1 2 Q2
1
ID = 3.6 A TJ = 25C 0 1 2 3
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE, (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source Voltage vs. Total Charge
1.8 IS, SOURCE CURRENT (AMPS)
1000
VDD = 16 V ID = 2.8 A VGS = 4.5 V tf tr td(off)
1.5 1.2 0.9 0.6 0.3
VGS = 4.5 V TJ = 25C
t, TIME (ns)
100
10 td(on)
1 1 10 RG, GATE RESITANCE (W) 100
0 0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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MGSF2N02EL INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
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MGSF2N02EL
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AH
A L
3 1 2
BS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
V
G C D H K J
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
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MGSF2N02EL
Notes
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MGSF2N02EL
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MGSF2N02EL/D

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