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| 2SD668, 2SD668A Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IC(peak) PC Tj Tstg 2SD668 180 120 5 50 100 1 150 -55 to +150 2SD668A 180 160 5 50 100 1 150 -55 to +150 Unit V V V mA mA W C C 2SD668, 2SD668A Electrical Characteristics (Ta = 25C) 2SD668 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min 180 120 5 -- 1 2SD668A Max -- -- -- 10 320 -- 2 1.5 -- -- Min 180 160 5 -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- 140 3.5 Max -- -- -- 10 200 -- 2 1.5 -- -- V V MHz pF Unit V V V A Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA IC = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Typ -- -- -- -- -- -- -- -- 140 3.5 Collector cutoff current ICBO DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage VCE(sat) 60 30 -- -- -- -- Base to emitter voltage VBE Gain bandwidth product fT Collector output capacitance Note: Cob 1. The 2SD668 and 2SD668A are grouped by hFE1 as follows. B C 100 to 200 100 to 200 D 160 to 320 -- 2SD668 2SD668A 60 to 120 60 to 120 2 2SD668, 2SD668A Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 0.5 0 50 100 Ambient temperature Ta (C) Typical Output Characteristics 150 20 Collector current IC (mA) 100 16 90 80 70 12 60 50 8 40 30 4 20 10 A IB = 0 0 2 4 6 8 10 Collector to emitter voltage VCE (V) Typical Transfer Characteristics 100 Collector current IC (mA) VCE = 5 V 30 Ta = 75C 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 Base to emitter voltage VBE (V) DC Current Transfer Ratio vs. Collector Current 280 DC current transfer ratio hFE 240 200 160 120 80 40 0.5 25 -25 Ta = 75C VCE = 5 V 1.0 2 5 10 20 Collector current IC (mA) -25 3 25 50 3 2SD668, 2SD668A 1.2 lC = 10 lB 1.0 0.8 0.6 0.4 0.2 25 0 -0.1 Collector current IC (mA) 0 VCE (sat) VBE (sat) C Ta = -25 25 75 0.24 0.20 0.16 0.12 0.08 25 C 75 T - a= 0.04 Gain Bandwidth Product vs. Collector Current 500 Gain bandwidth product fT (MHz) VCE = 10 V 200 100 50 20 10 1 2 5 10 20 Collector current IC (mA) 50 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 2 5 10 20 50 100 Collector to base voltage VCB (V) 4 Collector to emitter saturation voltage VCE (sat) (V) Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE (sat) (V) 2SD668, 2SD668A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 5 |
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