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| IXA12IF1200TC preliminary XPT IGBT Copack C (2) I C25 = = VCES VCE(sat)typ = 20 A 1200 V 1.8 V Part number IXA12IF1200TC (G) 1 E (3) Features / Advantages: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage Applications: AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Package: Housing: TO-268AA (D3Pak) rIndustry standard outline rEpoxy meets UL 94V-0 rRoHS compliant IGBT Ratings Symbol VCES VGES IC25 I C90 Ptot I CES I GES VCE(sat) VGE(th) Q Gon t d(on) tr t d(off) tf Eon Eoff RBSOA Total power dissipation Collector emitter leakage current Definition Collector emitter voltage Maximum DC gate voltage Collector current Conditions VGE = 0 V TVJ = 25C TVJ = 25C TC = 25C TC = 90C TVJ = 25C VCE = VCES ; VGE = 0 V VCE = 0 V; VGE = 20 V IC = 9 A; VGE = 15 V TVJ = 25C TVJ = 125 C TVJ = 25C TVJ = 125 C min. typ. max. 1200 20 20 13 85 0.1 Unit V V A A W mA mA nA V V V nC ns ns ns ns mJ mJ 0.1 500 1.8 2.1 5.5 6 27 70 40 6.5 2.1 Gate emitter leakage current Collector emitter saturation voltage Gate emitter threshold voltage Total gate charge Turn-on delay time Current rise time Turn-off delay time Current fall time Turn-on energy per pulse Turn-off energy per pulse Reverse bias safe operation area I C = 0.3 mA; VGE = VCE VCE = 600 V; VGE = 15 V; IC = 10 A Inductive load VCE = 600 V; IC = 10 A VGE = 15 V; R G = 100 VGE = 15 V; R G = 100 TVJ = 125 C TVJ = 125C 250 100 1.1 1.1 30 A VCEK = 1200 V VCE = 900 V; VGE = 15 V RG = 100 ; non-repetitive TVJ = 125C 10 40 1.5 s A K/W www..com circuit safe operation area Short SCSOA t SC I SC RthJC Short circuit duration Short circuit current Thermal resistance juntion to case IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA12IF1200TC preliminary Diode Ratings Symbol I F25 I F 90 VF Q rr I RM t rr Erec(off) RthJC Forward voltage Definition Forward current Conditions TC = 25C TC = 90C I F = 10 A TVJ = 25C TVJ = 125 C min. typ. max. 22 14 V Unit A A V V C A ns mJ 1.95 1.85 tbd tbd tbd tbd 2.2 Reverse recovery charge Maximum reverse recovery current Reverse recovery time Reverse recovery losses at turn-off Thermal resistance juntion to case VR = 600 V; di F /dt = I F = 10 A A/s; TVJ = 125 C 1.8 K/W Equivalent Circuits for Simmulation I V0 R0 Ratings Symbol V0 R0 V0 R0 R1 C1 Definition IGBT min. TVJ = 150 C TVJ = 150 C typ. max. 1.1 153 1.1 90 Unit V m V m Diode R2 C2 R3 C3 R4 C4 IGBT R1 R2 R3 R4 tbd tbd tbd tbd tbd tbd tbd tbd Diode tbd tbd tbd tbd tbd tbd tbd tbd 1 2 3 4 www..com IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA12IF1200TC preliminary Package TO-268AA (D3Pak) Ratings Symbol TVJ Tstg RthCH Weight FC Mounting force with clip Definition Virtual junction temperature Storage temperature Thermal resistance case to heatsink Conditions min. -55 -55 typ. max. 150 150 Unit C C K/W g 0.15 5 20 120 N Product Marking IXYS abcd Part number I X A 12 IF 1200 TC = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] TO-268AA (D3Pak) (2) Logo Part No. Date Code Order Code Ordering Standard Part Name IXA 12 IF 1200 TC Marking on Product IXA12IF1200TC Delivering Mode Base Qty Code Key www..com IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA12IF1200TC preliminary 20 VGE = 15 V 20 VGE = 15 V 17 V 19 V 13 V 16 16 TVJ = 125C 11 V 12 IC [A] TVJ = 25C 12 IC TVJ = 125C 8 [A] 8 9V 4 4 0 0 1 VCE [V] Fig. 1 Typ. output characteristics 0 2 3 0 1 2 VCE [V] Fig. 2 Typ. output characteristics 20 IC = 10 A VCE = 600 V 3 4 20 16 15 VGE 10 [V] IC [A] 12 8 4 TVJ = 125C TVJ = 25C 5 0 5 6 7 8 0 9 10 11 12 13 0 10 20 QG [nC] 30 VGE [V] Fig. 3 Typ. tranfer characteristics Fig. 4 Typ. turn-on gate charge Eon 3.0 2.5 2.0 E [mJ] RG = 100 VCE = 600 V VGE = 15 V TVJ = 125C 2.0 1.6 IC = 10 A VCE = 600 V VGE = 15 V TVJ = 125C Eon 1.5 1.0 0.5 Eoff E [mJ] 1.2 Eoff 0.8 0.4 www..com 0.0 0 4 8 12 IC [A] Fig. 5 Typ. switching energy vs. collector current 16 20 0.0 80 120 160 200 240 RG [] Fig. 6 Typ. switching energy vs. gate resistance IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved IXA12IF1200TC preliminary 20 16 12 IC [A] 8 TVJ = 125C TVJ = 25C 4 0 0 1 VF [V] Fig. 7 Typ. forward characteristic 2 3 www..com IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20090409 (c) 2009 IXYS all rights reserved |
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