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Prod uct Bul le tin OP770A Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP770A, OP770B, OP770C, OP770D
Features * * * *
Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 C to +100 C Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 C(1) Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes: (1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/ C above 25 C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lense surface of the phototransistor being tested. (4) To calculate typical collector dark current in A, use the formula ICED = 10 (0.040T A-3.4) when TA is ambient temperature in C.
Description
The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity. The device's wide receiving angle provides relatively even reception over a large area. The OP770 is 100% production tested using an infrared light source for close correlation with Optek's GaAs and GaAIAs emitters. Side-looking package is designed for easy PC board mounting of slotted optical switches or optical interrupt detectors.
Typi cal Per form ance Curves
Typical Spectral Response
Schematic
Wavelength - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972) 323- 2200
Fax (972) 323- 2396
www..com
Types OP770A, OP770B, OP770C, OP770D
SYMBOL PARAMETER
On-State Collector Current IC(ON) OP770D OP770C OP770B OP770A
Elec tri cal Char ac ter is tics(TA = 25 o C un less oth er wise noted) MIN
0.85 0.85 1.50 2.25 100 100 5.0 0.40 1000
TYP MAX UNITS
7.00 2.80 4.20 7.00
TEST CON DI TIONS
VCE = 5.0 V, Ee = 1.0 mW/cm2(3)
mA
IC /T ICEO V(BR)ECO VCE(SAT) CCE
Relative IC Changes with Temperature Collector Dark Current Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Capacitance
%/ C nA V V pF
VCE = 5.0 V, Ee = 1.0 mW/cm2 , = 935 nm VCE = 10.0 V, Ee = 0 IE = 100 A IC = 100 A, Ee = 1.0 mW/cm2(3) VR = 0
Typi cal Per form ance Curves
Normalized Output vs. Frequency
1.00 .75 160 VR L = 1 V VCE = 5 V 50% Duty Cycle
Typical Rise and Fall Time vs. Load Resistance
LED = GaAIAs, = 890 140 n m 120 100 V CC = 5 V V RL = 1 V 80 f = 100 Hz 60 PW = 1 mS 40 20 0 OP770 OP550
OP770
.50 OP550 .25 RL = 10 K 0.0 1 10 100 1000
0
2
4
6
8
10
Frequency - KHz
RL - Load Resistance - K
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396

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