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| ADVANCE TECHNICAL INFORMATION www..com PolarHV Power MOSFET N-Channel Enhancement Mode TM IXTA 14N60P IXTP 14N60P IXTQ 14N60P VDSS ID25 RDS(on) = 600 V = 14 A 550 m TO-3P (IXTQ) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-220 TO-263 (TO-3P,TO-220) Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Tranisent TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C 300 -55 ... +150 150 -55 ... +150 300 250 W C C C C C G = Gate S = Source G S (TAB) D = Drain TAB = Drain Maximum Ratings 600 600 30 40 14 42 14 23 0.9 10 V V G V V A A A mJ J V/ns D S (TAB) TO-220 (IXTP) G DS (TAB) TO-263 (IXTA) Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.13/10 Nm/lb.in. 5.5 4 2 g g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.0 100 25 250 550 V V nA A A m Advantages Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2005 IXYS All rights reserved DS99329(02/05) IXTA 14N60P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 9 13 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz 210 27 23 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 (External) 27 70 26 70 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 17 34 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 K/W K/W IXTP 14N60P IXTQ 14N60P www..com TO-3P (IXTQ) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthCK VDS = 20 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14 42 1.5 A TO-220 (IXTP) Outline A V ns C IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 18A -di/dt = 100 A/s VR = 100V TO-263 (IXTA) Outline Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 510 4.0 Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 |
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