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| NTMD6601NR2G Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 Features * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SO-8 Surface Mount Package Saves Board Space This is a Pb-Free Device http://onsemi.com V(BR)DSS 80 V 245 mW @ 4.5 V RDS(on) Max 215 mW @ 10 V 2.2 A ID Max Applications * LCD Displays MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA t < 5 s (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 70C TA = 25C TA = 25C TA = 70C TA = 25C TA = 25C TA = 70C TA = 25C, tp = 10 ms IDM TJ, TSTG IS EAS PD ID PD ID Symbol VDSS VGS ID Value 80 15 1.4 1.2 1.0 1.1 0.9 0.6 2.2 1.7 9.0 -55 to +150 1.3 25 A C A mJ 8 1 SO-8 CASE 751 STYLE 11 1 S1 G1 S2 G2 N-Channel Unit V V A G W A W A 8 6601N AYWW G S D MARKING DIAGRAM & PIN ASSIGNMENT D1 D1 D2 D2 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 50 V, VGS = 10 V, IL = 7.0 Apk, L = 1.0 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C 6601N A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package THERMAL RESISTANCE RATINGS Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Junction-to-FOOT (Drain) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJF RqJA Max 120 48 40 200 C/W Unit ORDERING INFORMATION Device NTMD6601NR2G Package SO-8 (Pb-Free) Shipping 2500/Tape & Reel 1. Surface-mounted on 2 inch sq FR4 board using 1 inch sq pad size, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 1 February, 2008 - Rev. 0 Publication Order Number: NTMD6601N/D NTMD6601NR2G ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V VGS = 5.0 V CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY - DRAIN DIODE RATINGS (Note 3) Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.0 A VGS = 0 V ID = 1.0 A TJ = 25C TJ = 150C 0.8 0.6 44 21 23 43 86 nC ns 1.0 V td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 10 V, VDD = 40 V, ID = 2.5 A, RG = 47 W VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RG = 27 W 21 62 52 50 15 95 50 105 ns 35 105 85 85 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 10 V, VDS = 40 V, ID = 1.0 A VGS = 5.0 V, VDS = 40 V, ID = 1.0 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V 220 55 16 5.0 0.4 1.0 2.75 9.0 15 nC 400 100 30 9.0 nC pF ID = 2.2 A ID = 1.0 A VGS = VDS, ID = 250 mA 1.0 1.9 4.6 190 215 215 245 3.0 V mV/C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 80 V TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 80 99.8 1.0 25 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = 15 V 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMD6601NR2G TYPICAL ELECTRICAL CHARACTERISTICS 5 9V ID, DRAIN CURRENT (A) 4 8V 7V 3 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 6 TJ = 100C TJ = 25C TJ = - 55C VDS 10 V 10 V 4V 5V 6V VGS = 3.5 V ID, DRAIN CURRENT (A) 2 1 0 TJ = 25C Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.5 VGS = 5.0 V 0.4 TJ = 100C 0.3 TJ = 25C 0.2 TJ = -55C 0.1 0.3 TJ = 25C 0.25 VGS = 5.0 V 0.2 VGS = 10 V 0.15 0.1 0.05 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) 0 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.5 VGS = 5.0 V ID = 1.0 A 2 100,000 VGS = 0 V 10,000 IDSS, LEAKAGE (nA) TJ = 150C 1000 1.5 1 100 TJ = 100C 0.5 0 -50 10 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) 10 20 30 40 50 60 70 80 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage http://onsemi.com 3 NTMD6601NR2G TYPICAL ELECTRICAL CHARACTERISTICS VDS = 0 V VGS = 0 V Ciss VGS, GATE-TO-SOURCE VOLTAGE (V) 600 500 C, CAPACITANCE (pF) 400 300 200 100 10 QT 8 TJ = 25C 6 Q1 Q2 Crss Ciss 4 Crss 0 -10 -5 VGS 0 VDS 5 10 15 Coss 20 25 2 0 0 1 ID = 1.0 A TJ = 25C 2 3 4 5 6 7 QG, TOTAL GATE CHARGE (nC) 8 9 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 2.5 IS, SOURCE CURRENT (A) Figure 7. Capacitance Variation 1000 VDD = 64 V ID = 2.2 A VGS = 5.0 V t, TIME (ns) 100 tr td(off) tf td(on) 2 VGS = 0 V TJ = 25C 1.5 1 10 0.5 0 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current ID, DRAIN CURRENT (A) VGS = 15 V SINGLE PULSE TC = 25C 100 ms 1 ms EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 10 25 ID = 7.0 A 20 15 1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 10 ms 10 5 0 25 50 75 100 125 150 175 TJ, STARTING JUNCTION TEMPERATURE (C) 0.1 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTMD6601NR2G TYPICAL ELECTRICAL CHARACTERISTICS 10 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 Normalized to qja at 10s. Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W 0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient 1.0E+03 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 Figure 13. Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 5 NTMD6601NR2G PACKAGE DIMENSIONS SO-8 NB CASE 751-07 ISSUE AJ -XA 8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 B 1 4 S 0.25 (0.010) M Y M -YG C -ZH D 0.25 (0.010) M SEATING PLANE K N X 45 _ 0.10 (0.004) M ZY S J X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTMD6601N/D |
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