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DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage PACKAGE DRAWINGS (Unit: mm) 1.5 -0.1 +0.2 6.5 0.2 5.0 0.2 1.6 0.2 2.3 0.2 0.5 0.1 4 5.5 0.2 7.0 MIN. 13.7 MIN. +0.2 power supply devices, as well as for high-current switching. FEATURES * Available for high-current control in small dimension * Z type is a lead processed product and is deal for mounting a hybrid IC. * Low collector saturation voltage: VCE(sat)1 = -0.3 V MAX. (IC = -3.0 A) * Fast switching speed: tf = 0.4 s MAX. (IC = -3.0 A) * High DC current gain and excellent linearity 1.1 0.2 1 2 3 0.5 -0.1 2.3 2.3 0.75 0.5 -0.1 +0.2 TO-251 (MP-3) Parameter Collector to base voltage Collector to emitter voltage Base to emitter voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation (Tc = 25C) Total power dissipation (TA = 25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Note 1 Ratings -150 -100 -7.0 -5.0 -10 -2.5 18 1.0 Note 2 Unit V V V A A A W 6.50.2 5.00.2 0.8 4.3 MAX. 1.5-0.1 +0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25C) 2.30.2 0.50.1 1 2 3 2.0 MIN. 5.50.2 10.0 MAX. 1.10.2 IB(DC) PT PT Tj Tstg 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 , 2.0 Note 3 W C C TO-252 (MP-3Z) 150 -55 to +150 ELECTRODE CONNECTION 1. 2. 3. 4. Base Collector Emitter Collector Fin Notes 1. PW 10 ms, Duty Cycle 50% 2. Printing board mounted 3. 7.5 mm2 x 0.7 mm ceramic board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14839EJ4V0DS00 (4th edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. c 0.7 1.0 MIN. 1.8TYP. 4 2002 2SA1647,1647-Z ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Collector to emitter voltage Collector to emitter voltage Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time Fall time Symbol VCEO(SUS) VCEX(SUS) ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 Note Conditions IC = -2.5 A, IB = -0.25 A, L = 1 mH IC = -2.5 A, IB1 = -IB2 = -0.25 A, VBE(OFF) = 1.5 V, L = 180 H, clamped VCB = -100 V, IE = 0 A VCE = -100 V, RBE = 50 , TA = 125C VCE = -100 V, VBE(OFF) = 1.5 V VCE = -100 V, VBE(OFF) = 1.5 V, TA = 125C VEB(OFF) = -5.0 V, IC = 0 A VCE = -2.0 V, IC = -0.5 A VCE = -2.0 V, IC = -1.0 A VCE = -2.0 V, IC = -3.0 A IC = -3.0 A, IB = -0.15 A IC = -4.0 A, IB = -0.2 A IC = -3.0 A, IB = -0.15 A IC = -4.0 A, IB = -0.2 A VCB = -10 V, IE = 0, f = 1.0 MHz VCE = -10 V, IC = 0.5 A IC = -3.0 A, RL = 17 , IB1 = -IB2 = -0.15 A, VCC -50 V Refer to SWITCHING TIME TEST CIRCUIT. MIN. -100 -100 TYP. MAX. Unit V V -10 -1.0 -10 -1.0 -10 100 100 60 -0.3 -0.5 -1.2 -1.5 110 90 0.3 1.5 0.4 400 A mA A mA A Note Note VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Cob fT ton tstg tf Note V V V V pF MHz Note Note Note s s s Note Pulse test PW 350 s, Duty Cycle 2%/Pulsed hFE CLASSIFICATION Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 SWITCHING TIME TEST CIRCUIT Base current waveform Collector current waveform 10% 90% 2% 2 Data Sheet D14839EJ4V0DDS 2SA1647,1647-Z TYPICAL CHARACTERISTICS (TA = 25C) Total Power Dissipation PT (W) Case Temperature TC (C) Transient Thermal Resistance rth(j-c) (t) (C/W) IC Derating dT (%) Case Temperature TC (C) TC = 25C 25C Single pulse Single pulse 25C Collector Current IC (A) Rth(j-A)Rth 125= 125 C/W = (j-A) C/W Rth 6.94 6.94 Rth(j-C) = (j-C) = C/WC/W Collector to Emitter Voltage VCE (V) Pulse Width PW (s) TA = 125C Pulse test Collector Current IC (A) DC Current Gain hFE 25C -40C Collector to Emitter Voltage VCE (V) Collector Current IC (A) Data Sheet D14839EJ4V0DDS 3 2SA1647,1647-Z Collector Saturation Voltage VCE(sat) (V) Base Saturation Voltage VBE(sat) (V) IC / IB = 20 A IC / IB = 20 A Pulse test Pulse test TA = -40C 25C 125C TA = 125C 25C -40C Collector Current IC (A) Collector Current IC (A) Collector Current IC (A) Collector Capacitance Cob (pF) Gain Bandwidth Product fT Collector to Base Voltage VCB (V) IC = 20 A * IB1 = -20 A * IB2 Turn-On Time ton (s) StorageTime tstg (s) Fall Time tf (s) Collector Current IC (A) 4 Data Sheet D14839EJ4V0DDS 2SA1647,1647-Z * The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
Price & Availability of 2SA1647-Z-T2
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