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Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 600 20 38 20 152 145 75 +150 -40 +150 50 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=20mA VGE=15V IC=20A VGE=0V VCE=10V f=1MHz VCC=300V IC=20A VGE=15V RG=120 VCC=300V IC=20A VGE=+15V RG=12 IF=20A VGE=0V IF=20A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 3.0 300 5.5 1300 300 70 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 0.86 1.66 Units C/W Collector Current vs. Collector-Emitter Voltage 60 T j= 2 5 C 60 12V 50 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C V GE = 2 0 V , 1 5 V 50 V GE = 2 0 V , 1 5 V [A] 40 [A] 12V 40 C Collector Current : I 30 10V 20 Collector Current : I C 30 10V 20 10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 40A 4 IC = 40A 20A 2 20A 10A 2 10A 0 0 0 5 10 15 20 25 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 1 2 , V GE= 1 5 V , T j= 2 5 C 1000 1000 Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 1 2 , V GE = 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] t off t on 100 tf tf t on 100 tr Switching Time : t on tr 10 0 10 20 30 Switching Time : t 10 0 on 10 20 30 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =300V, I C = 2 0 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =300V, I C = 2 0 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 t on t off tr tf 100 1000 t off t on tf tr on Switching Time : t Switching Time : t on 100 10 0 100 Gate Resistance : R G [ ] 10 0 100 Gate Resistance : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 500 Dynamic Input Characteristics T j= 2 5 C 25 [V] , C res , C ies [pF] CE 1000 Collector-Emitter Voltage : V 300 15 C oes 100 200 10 C res 100 5 10 0 0 5 10 15 20 25 30 35 0 20 40 60 Gate Charge : QG 80 100 [nQ] 0 120 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 200 / dt= 1 0 0 A / s e c 8 / dt = 1 0 0 A / s e c [nsec] [A] 150 rr Reverse Recovery Time : t 100 25C Reverse Recovery Current : I rr 125C 125C 6 4 25C 50 2 0 0 5 10 15 20 25 30 35 0 0 5 10 15 20 25 30 35 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V Capacitance : C oes GE [V] C ies 400 V C C =200V, 300V, 400V 20 Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE < 15V, T j<125C, R G >1 2 50 300 Typical Short Circuit Capability V CC = 4 0 0 V , R G = 1 2 , T j= 1 2 5 C 60 I SC 250 [A] 40 t SC 50 [A] SC C 150 30 20 100 20 10 50 10 0 0 100 200 300 400 500 600 700 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 60 T j= 1 2 5 C , 2 5 C 350 I F = 2 0 A , T j= 1 2 5 C -di / dt 14 I rr [nsec] 50 300 12 [A] Forward Current : I 200 8 30 150 6 20 100 t rr 50 4 10 2 0 0 1 2 3 4 5 0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 FWD 10 0 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Reverse Recovery Current : I 40 Reverse Recovery Time : t F rr 250 10 rr [A] Short Circuit Time : t 30 Short Circuit Current : I Collector Current : I SC 200 40 [s] Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 381-9991 (fax) P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 233-0481 www.collmer.com |
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