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| AP4501GM www..com RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. Simple Drive Requirement D2 D2 N-CH BVDSS RDS(ON) ID G2 S1 S2 G1 30V 28m 7A -30V 50m -5.3A Low On-resistance Fast Switching Performance D1 D1 P-CH BVDSS RDS(ON) ID SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 20 7.0 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 20 -5.3 -4.7 -20 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit /W Data and specifications subject to change without notice 1 200805264 AP4501GM www..com N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=7A VGS=4.5V, ID=5A Min. 30 1 - Typ. 6 8.4 1.4 4.7 5 8 18.5 9 485 80 75 Max. Units 28 42 3 1 25 100 13.5 770 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF BVDSS RDS(ON) VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=20V ID=6A VDS=24V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/s Min. - Typ. 19 11 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge 2 AP4501GM www..com P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70 C) o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. 5 8 1.7 4.5 6.7 10 21 10 595 80 75 Max. Units 50 90 -3 -1 -25 100 13 950 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-5A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=3.3,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-2.6A, VGS=0V IS=-5A, VGS=0V, dI/dt=100A/s Min. - Typ. 18 11 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4501GM www..com N-Channel 40 40 T A =25 ID , Drain Current (A) 30 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T A =150 30 10V 7.0V 5.0V 4.5V 20 20 V G =3.0V 10 V G =3.0V 10 0 0 1 2 3 4 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 34 1.8 I D = 5A 30 I D =7A V G =10V Normalized R DS(ON) T A = 25 o C RDS(ON0 (m) 1.4 26 1.0 22 30 18 2 4 6 8 10 -30 0 50 100 150 0.6 -50 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 10 8 1.2 T j =150 o C IS(A) 6 T j =25 o C Normalized VGS(th) (V) 1.4 1.0 4 0.8 2 0.6 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4501GM www..com N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) 10 C iss 8 6 ID=6A V DS = 24 V C (pF) 100 C oss C rss 4 2 0 0 3 6 9 12 15 18 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 100us ID (A) 1ms 1 0.2 0.1 0.1 10ms 100ms 0.1 0.05 PDM t 0.02 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 oC/W T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 30 0.01 0.0001 -30 Single Pulse 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 5 AP4501GM www..com P-Channel 40 40 T A =25 o C -ID , Drain Current (A) 30 -ID , Drain Current (A) - 10V - 7.0V - 5.0V - 4.5V T A = 150 o C - 10V - 7.0V - 5.0V - 4.5V 30 20 20 10 V G = - 3 .0V 10 V G = - 3 .0V 0 0 1 2 3 4 5 6 0 0 2 4 6 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.6 I D = -4.2 A T A =25 o C 1.4 60 I D = -5.3 A V G = - 10V Normalized R DS(ON) RDS(ON) (m) 1.2 50 1.0 40 0.8 30 30 2 4 6 8 10 -30 0 50 100 150 0.6 -50 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 8 6 Normalized -VGS(th) (V) 1.4 1.0 -IS(A) 4 T j =150 o C T j =25 o C 0.8 2 0 0.6 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4501GM www..com P-Channel f=1.0MHz 15 1000 C iss -VGS , Gate to Source Voltage (V) 12 C (pF) 9 I D = -5.3A V DS = -15V 100 C oss C rss 6 3 0 0.0 4.0 8.0 12.0 16.0 20.0 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (R thja) Duty factor=0.5 10 0.2 -ID (A) 100us 1ms 1 0.1 0.1 10ms 100ms 0.1 0.05 PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 oC/W T A =25 o C Single Pulse 0.1 1 10 1s DC 30 0.01 0.0001 0.01 -30 Single Pulse 0.01 100 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 7 www..com ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D SYMBOLS Millimeters MIN NOM MAX A 8 7 6 5 E1 1 E 1.35 0.10 0.33 0.19 4.80 3.80 5.80 0.38 0 1.55 0.18 0.41 0.22 4.90 3.90 6.15 0.71 4.00 1.27 TYP 1.75 0.25 0.51 0.25 5.00 4.00 6.50 1.27 8.00 A1 B C D E1 E L 2 3 4 e B e A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 4501GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 8 |
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