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| PHOTO IC Photo IC for laser beam synchronous detection S9703-10/-11 High sensitivity, high-speed response S9703 series photo IC uses a high-speed PIN photodiode designed for laser beam synchronous detection. When compared to S9703 and S9703-01 previously marketed, S9703-10 and S9703-11 have reduced their reflection effects in the package. Two types of current amplifiers are available with a gain of 6 times (S9703-11) and 20 times (S9703-10) that can be selected according to laser power to be used. Tape-and-reel shipment is available (S9703-30 and S9703-31). HAMAMATSU also provides S9684 series photo ICs that use a dualelement Si www..com PIN photodiode. Features Current amplifier gain: 20 times (S9703-10) 6 times (S9703-11) l Digital output l Small package l Suitable for lead-free solder reflow l Active area: 2.84 x 0.5 mm Applications l High sensitivity l Print start timing detection for laser printers, digital copiers, fax machines, etc. s Absolute maximum ratings (Ta=25 C, unless otherwise noted) Parameter Symbol Supply voltage Vcc Power dissipation *1 P Output voltage *2 Vo Output current Io Ro terminal current IRO Operating temperature Topr Storage temperature Tstg *1: Power dissipation decreases at a rate of 4 mW/C above Ta=25 C. *2: Vcc=+0.5 V or less Value -0.5 to +7 300 -0.5 to +7 5 3 -25 to +80 -40 to +85 Unit V mW V mA mA C C s Electrical and optical characteristics (Ta=25 C, =780 nm, Vcc=5 V, Ro=5.1 k, unless otherwise noted) Parameter Symbol Condition Current consumption Icc No input High level output voltage VOH IOH=4 mA Low level output voltage VOL IOL=4 mA *3 S9703-10 Threshold input power PTH S9703-11 S9703-10 HL propagation tPHL delay time S9703-11 PI=66 W (S9703-10) S9703-10 LH propagation PI=225 W (S9703-11) tPLH Duty ratio 1:1 delay time S9703-11 CL=15 pF *4 Rise time tr Fall time tf Maximum input power PI Max. *3: Input power [PI]=66 W (S9703-10), PI=225 W (S9703-11) 100 % INPUT LIGHT INTENSITY tPHL tPLH 90 % OUTPUT 1.5 V 10 % tf tr KPICC0112EA Min. 4.6 17 60 - Typ. 0.9 22 75 100 75 200 150 4 4 - Max. 1.5 0.3 27 90 200 150 250 200 7 7 PTH x 8 Unit mA V V W ns ns ns W 50 % 0% PRELIMINARY DATA Apr. 2007 1 Photo IC for laser beam synchronous detection s Block diagram Vcc Vref 0.1 F 5V S9703-10/-11 CURRENT AMPLIFIER PD Vo Ro EXTERNAL GAIN RESISTANCE Ro GND www..com KPICC0113EA s Function S9703-10/-11 photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally connected to the IC chip as shown in the block diagram. S9703-10/-11 should be used with terminal Ro connected to an external gain resistance Ro. A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and, after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages VRO at terminal Ro is given by the following expression. VRO=A x S x PI x Ro [V] ********** (1) A: Current amplifier gain (S9703-10: 20 times, S9703-11: 6 times) S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm) PI: Input power [W] Ro: External gain resistance []; usable range 2 k to 10 k VRO is input to the internal comparator and compared with the internal reference voltage Vref (approx. 1 V) so the output Vo is "High" when VRO < Vref or "Low" when VRO > Vref. In equation (1), set the Ro value so that VRO is 2 to 3 V. s Dimensional outline (unit: mm) 3.2 0.2 (INCLUDING BURR) 0.66 0.2 CENTER OF ACTIVE AREA 0.5 PHOTOSENSITIVE SURFACE 3.4 MIRROR AREA RANGE 0.8 0.8 0.8 0.8 (10 x) 0.4 4.2 0.2 (10 x) 0.3 4.0 * 1.0 0.4 2.84 0.15 0.2 3.0 * 1.0 0.4 0.05 0.35 5.0 0.3 0.45 0.3 3.0 * 2.8 2.4 MIRROR AREA RANGE 0.45 0.3 PHOTOSENSITIVE SURFACE 0.75 1.3 0.15 0.1 0.1 Tolerance unless otherwise noted: 0.1, 2 Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y0.2, 2 Vcc NC OUT GND Ro GND GND GND GND GND 2.9 3.0 * 4.0 * 3.8 3.9 KPICA0071EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIC1068E02 Aug. 2007 DN |
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