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| www..com MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 IN8 8 GND 9 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 NC NC : No connection OUTPUT FEATURES High breakdown voltage (BVCEO 40V) Synchronizing current (Ic(max) = 50mA) Wide operating temperature range (Ta = -20 to +75C) Package type 18P4G(P) NC 1 20 NC APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals FUNCTION The M54513P and M54513FP each have eight circuits consisting of NPN transistors. These ICs have resistance of 2 k at inputs and of 13.6k between the base and emitter. The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design. INPUT IN1 2 IN2 3 IN3 4 IN4 5 IN5 6 IN6 7 IN7 8 IN8 9 GND 10 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 NC NC : No connection OUTPUT Package type 20P2N-A(FP) CIRCUIT DIAGRAM OUTPUT 2K INPUT 13.6K GND The eight circuits share the GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Aug. 1999 MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings -0.5 ~ +40 50 -0.5 ~ +10 1.79(P)/1.10(FP) -20 ~ +75 -55 ~ +125 Unit V mA V W C C RECOMMENDED OPERATING CONDITIONS Symbol VO IC VIH VIL Parameter Output voltage Collector current "H" input voltage "L" input voltage (Unless otherwise noted, Ta = -20 ~ +75C) min 0 0 2 0 Limits typ -- -- -- -- max 40 30 8 0.2 Unit V mA V V ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions Limits min 40 -- -- -- 80 typ+ -- 25 70 0.85 200 max -- 100 170 1.7 -- Unit V mV mA -- Collector-emitter breakdown voltage ICEO = 100A Collector-emitter saturation voltage Input current DC amplification factor VI = 2V, IC = 10mA VI = 2.5V, IC = 30mA VI = 2.5V VCE = 4V, IC = 30mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 65 1200 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Measured device VO TIMING DIAGRAM 50% RL OUTPUT 50% INPUT PG 50 CL OUTPUT 50% 50% ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VP = 2.5VP-P (2) Output conditions : RL = 300, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes toff Aug. 1999 MITSUBISHI SEMICONDUCTOR M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 50 M54513P VI = 2V Ta = -20C Ta = 25C Ta = 75C Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54513FP Collector current Ic (mA) 50 75 100 40 30 1.0 20 0.5 10 0 0 25 0 0 0.05 0.10 0.15 0.20 Ambient temperature Ta (C) DC Amplification Factor Collector Current Characteristics 103 7 VCE = 4V Output saturation voltage VCE (sat) (V) Grounded Emitter Transfer Characteristics 50 VCE = 4V Ta = 75C Ta = -20C DC amplification factor hFE 5 3 2 Ta = 25C Ta = 75C Collector current Ic (mA) 40 30 Ta = 25C 102 7 5 3 2 Ta = -20C 20 10 101 0 10 2 3 5 7 101 2 3 5 7 102 0 0 0.5 1.0 1.5 2.0 Collector current Ic (mA) Input voltage VI (V) Input Characteristics 5 4 Input current II (mA) Ta = -20C 3 Ta = 25C 2 Ta = 75C 1 0 0 2 4 6 8 10 Input voltage VI (V) Aug. 1999 |
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