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| Datasheet File OCR Text: |
| IGBT MODULE ( N series ) n Features * * * * n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Ratings 1200 20 40 80 40 320 1200 20 15 30 120 1200 1 50 +150 -40 +125 2500 3.5 3.5 Units V A W V A W V A C V Nm Continuous 1ms Continuous 1 device Continuous 1ms 1 device 10ms A.C. 1min. Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) n Electrical Characteristics( Tj=25C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=40mA VGE=15V IC=40A f=1MHz, VGE=0V, VCE=10V VCC=600V IC = 40A VGE=15V RG = 24 IF=40A VGE=0V -di A IF=40A; VGE=-10V; /dt=120 /s VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=15V IC=15A VCC=600V IC = 15A VGE=15V RG = 82 VR=1200V Min. Max. 3.0 15 4.5 7.5 3.3 6200 (typ.) 1.2 1.5 0.5 3.0 350 1.0 100 3.3 1.2 1.5 0.5 1.0 600 Units mA A V pF s V ns mA nA V s mA ns n Thermal Characteristics Items Thermal Resistance (1 device) Contact Thermal Resistance Symbols Rth(j-c) Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound Min. Max. 0.39 0.85 1.04 0.05 (typ.) Units C/W Collector current vs. Collector-Emitter voltage T j=25C 100 V GE =20V,15V,12V,10V 100 Collector current vs. Collector-Emitter voltage T j=125C V GE=20V,15V,12V,10V, [A] C Collector current : I Collector current : I C [A] 75 75 50 50 8V 25 25 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 80A 40A 20A 4 IC= 80A 2 2 40A 20A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, Tj=25C 1000 t off t on tf tr 1000 Switching time vs. Collector current V CC =600V, R G =24 , V GE =15V, Tj=125C toff ton tf tr , t r , t off , t f [nsec] 100 , t r , t off , t f [nsec] Switching time : t on Switching time : t on 100 10 0 25 50 75 Collector current : I C [A] 10 0 25 50 75 Collector current : I C [A] Switching time vs. R G V CC =600V, I C=40A, V GE =15V, Tj=25C 1000 t off t on Dynamic input characteristics T j=25C 25 V CC =400V 800 600V 800V 600 15 20 , t r , t off , t f [nsec] 1000 tr tf Switching time : t Collector-Emitter voltage : V on CE [V] 400 10 200 100 5 10 Gate resistance : R G [ ] 100 0 0 100 200 300 400 500 600 0 700 Gate charge : Q G [nC] Forward current vs. Forward voltage 100 V GE =OV Reverse recovery characteristics t rr , I rr vs. I F [A] 75 rr [nsec] T j=125C 25C t rr 125C t rr 25C 100 F Reverse recovery current : I rr [A] Forward current : I 50 Reverse recovery time :t I rr 125C I rr 25C 25 10 0 0 1 2 3 4 5 0 25 50 75 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance 400 1 Brake IGBT Diode Reversed biased safe operating area +V GE =15V, -V GE <15V, T j<125C, R G >24 [C/W] th(j-c) C [A] IGBT 300 SCSOA (non-repetitive pulse) 200 Thermal resistance : R 0,1 Collector current : I 100 RBSOA (Repetitive pulse) 0,01 0,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [V] Switching loss vs. Collector current V CC =600V, R G =24 , V GE =15V 15 Capacitance vs. Collector-Emitter voltage T j=25C , E off , E rr [mJ/cycle] , C oes , C res [nF] 10 C ies 10 E on 125C E off 125C on E on 25C Switching loss : E Capacitance : C ies 1 5 E off 25C E rr 125C E rr 25C C oes C res 0 0 25 50 75 Collector Current : I C [A] 0,1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Brake Chopper IGBT Collector current vs. Collector-Emitter voltage T j=25C V GE =20V,15V,12V,10V 30 [A] [A] 30 Collector current vs. Collector-Emitter voltage T j=125C V GE=20V,15V,12V,10V, C Collector current : I 20 Collector current : I C 20 8V 10 10 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 [V] CE CE Collector-Emitter vs. Gate-Emitter voltage T j=125C 10 [V] 8 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 30A 15A 7.5A 4 IC= 30A 15A 7.5A 2 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, RG=82 , V GE =15V, Tj=25C 1000 t off t on tf tr , t r , t off , t f [nsec] 1000 Switching time vs. Collector current V CC =600V, R G =82 , V GE =15V, Tj=125C t off t on tf tr , t r , t off , t f [nsec] on on 100 Switching time : t 10 0 10 20 30 Collector current : I C [A] Switching time : t 100 10 0 10 20 30 Collector current : I C [A] Brake Chopper IGBT Switching time vs. R G V CC =600V, I C =15A, V GE =15V, Tj=25C 1000 , t r , t off , t f [nsec] t off t on 1000 tr tf V CC =400V 800 600V 800V Collector-Emitter voltage : V 600 15 20 Dynamic input characteristics T j =25C 25 Switching time : t on CE [V] 400 10 200 5 100 0 100 Gate resistance : R G [ ] 0 50 100 150 200 250 0 300 Gate charge : Q G [nC] Reversed biased safe operating area +V GE =15V, -V GE <15V, T j <125C, R G >51 150 , E off , E rr [mJ/cycle] 3 Switching loss vs. Collector current V CC =600V, R G =51 , V GE =15V C 100 SCSOA (non-repetitive pulse) E on 125C E off 125C 2 E on 25C Collector current : I [A] 50 Switching loss : E on 1 E off 25C E rr 125C Err 25C RBSOA (Repetitive pulse) 0 0 200 400 600 800 1000 1200 Collector-Emitter voltage : V C E [V] 0 0 10 20 30 Collector Current : I C [A] Capacitance vs. Collector-Emitter voltage T j =25C 10 , C oes , C res [nF] C ies 1 Capacitance : C ies 0,1 C oes C res 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V C E [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax- (972) 233-0481 - (fax) P.O. Box 702708 - Dallas, TX - (972) 733-1700 (972) 381-9991 www.collmer.com |
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