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GenX3TM 1200V IGBT
IXGH30N120B3D1 IXGT30N120B3D1
High speed Low Vsat PT IGBTs 3-20 kHz switching
VCES IC110 VCE(sat) tfi(typ)
= = =
1200V 30A 3.5V 204ns
Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 30 28 150 ICM = 60 @ 0.8 * VCE 300 -55 ... +150 150 -55 ... +150 W C C C Nm/lb.in. C C g g V V V V A A A A
TO-247 AD (IXGH)
G
C
E
C (TAB)
TO-268 (IXGT)
G G = Gate E = Emitter
E
C (TAB) C = Collector TAB = Collector
Mounting torque (TO-247) Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s TO-247 TO-268
1.13 / 10 300 260 6 4
Features Optimized for low conduction and switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 3.0 TJ = 125C 5.0 300 1.5 100 2.96 2.95 3.5 V A mA nA V V
High power density Low gate drive requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Welding Machines
VGE(th) ICES IGES VCE(sat)
IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 30A, VGE = 15V, Note 1 TJ = 125C
(c) 2008 IXYS CORPORATION, All rights reserved
DS99566A(05/08)
IXGH30N120B3D1 IXGT30N120B3D1
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS Inductive load, TJ = 25C IC = 30A, VGE = 15V, Notes 2 VCE = 0.8 * VCES, RG = 5 IC = 30A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VCE = 10V, Note 1 Min. 11 Characteristic Values Typ. Max. 19 1750 120 46 87 15 39 16 37 3.47 127 204 2.16 18 38 6.70 216 255 5.10 0.21 200 380 4.0 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W
Dim.
P
TO-247 AD Outline
e
Inductive load, TJ = 125C IC = 30A,VGE = 15V, Notes 2 VCE = 0.8 * VCES,RG = 5
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
TO-268 Outline
Reverse Diode (FRED) Symbol Test Conditions IF = 30A,VGE = 0V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 2.8 TJ = 150C 1.6 4 100 V V A ns 0.9 C/W
VF IRM trr RthJC
IF = 30A,VGE = 0V, -diF/dt = 100A/s, TJ = 100C VR = 300V TJ = 100C
Note 1: Pulse test, t 300s, duty cycle, d 2%. 2. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH30N120B3D1 IXGT30N120B3D1
Fig. 1. Output Characteristics @ 25C
60 55 50 45 200 VGE = 15V 13V 11V 180 160 140 VGE = 15V
Fig. 2. Extended Output Characteristics @ 25C
13V
IC - Amperes
40
IC - Amperes
35 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
9V
120 100 80 60 40 20 0
11V
7V
9V
7V
4.0
4.5
5.0
0
3
6
9
12
15
18
21
24
27
30
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
60 55 50 45 VGE = 15V 13V 11V 1.5 1.4 1.3
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I
C
= 60A
VCE(sat) - Normalized
IC - Amperes
40 35 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7V 9V
1.2 1.1 1.0 0.9 0.8 I 0.7
C
I
C
= 30A
= 15A
5V 0.6 -50 -25 0 25 50 75 100 125 150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
7.5 7.0 6.5 6.0 TJ = 25C 65 60 55 50 45
Fig. 6. Input Admittance
VCE - Volts
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 6 7 8 9 10 11 12 13 14 15 15A 30A I
C
IC - Amperes
= 60A
40 35 30 25 20 15 10 5 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 TJ = 125C 25C - 40C
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH30N120B3D1 IXGT30N120B3D1
Fig. 7. Transconductance
26 24 22 20 25C 125C TJ = - 40C 16 14 12 VCE = 600V I C = 30A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
18
14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70
VGE - Volts
16
10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 70
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz
60
Capacitance - PicoFarads
1,000
Cies
50
IC - Amperes
40 30 20 10 0 200
Coes 100
TJ = 125C RG = 5 dV / dt < 10V / ns
Cres 10 0 5 10 15 20 25 30 35 40
400
600
800
1000
1200
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N120B3(4A)5-06-08-A
IXGH30N120B3D1 IXGT30N120B3D1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
18 16 14 Eoff VCE = 960V Eon 20 16 14 12 Eoff VCE = 960V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
16
---
18 16
----
TJ = 125C , VGE = 15V
RG = 5 , VGE = 15V
14 12
E
Eoff - MilliJoules
Eoff - MilliJoules
E
on
12 10 8 6 4 2 5 7 9 11 13 15 17 19 21 23 25 I C = 30A I
C
14 = 60A 12 10 8 6 4
10 8 6 4 2 0 15 20 25
TJ = 125C
10 8 6 4 TJ = 25C 2 0
on
- MilliJoules
- MilliJoules
30
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
14 12 10 8 6 4 2 0 25 35 45 55 65 75 85 95 105 115 Eoff VCE = 960V I C = 60A Eon 16 460 440 14 12 420 400
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
650 600 550 500 450 I
C
----
RG = 5 , VGE = 15V
tf
VCE = 960V
td(off) - - - -
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
Eoff - MilliJoules
E - MilliJoules
380 360 340 320 300 280 260 240 5 7 9 11 13 15 17 19 21 23 25 I
C
10 8 6 4 2 125
on
= 60A
400 350 300
I C = 30A
= 30A
250 200 150 100
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
450 400 350 300 250 200 150 100 15 20 25 30 35 40 45 50 55 60 TJ = 25C 400 425 400 375 350
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
280
tf
VCE = 960V
td(off) - - - -
350 300 250 200 150 100 50
tf
VCE = 960V
td(off) - - - -
265 250 235 220
RG = 5 , VGE = 15V
RG = 5 , VGE = 15V
t d(off) - Nanoseconds
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
325 300 275 250 225 200 175 150 25 35 45 55 65 75 85 95 105 115 I
C
TJ = 125C
= 60A, 30A
205 190 175 160 145 130 115 125
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH30N120B3D1 IXGT30N120B3D1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
180 160 140 50 110 100 90 I
C
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
30
tr
VCE = 960V
td(on) - - - = 60A
46 42
tr
VCE = 960V
td(on) - - - -
28 26 24
TJ = 125C, VGE = 15V
RG = 5 , VGE = 15V
t r - Nanoseconds
120 100 80 60 40 20 0 5 7 9 11 13 15 17 19 21 23 25 I = 30A
38 34 30 26 22 18 14
t r - Nanoseconds
80 70 60 50 40 30 20 10 0 15
t d(on) - Nanoseconds
t d(on) - Nanoseconds
TJ = 125C, 25C
22 20 18 16 14 12 10 8
C
20
25
30
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
130 120 110 100 26
tr
VCE = 960V
td(on) - - - -
25 24 23 I C = 60A 22 21 20 19 18 17
RG = 5 , VGE = 15V
t d(on) - Nanoseconds
t r - Nanoseconds
90 80 70 60 50 40 30 20 10 25 35 45 55 65 I
C
= 30A
16 15
75
85
95
105
115
14 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N120B3(4A)5-06-08-A
IXGH30N120B3D1 IXGT30N120B3D1
60 A 50 IF 40 1000 nC V = 300V R 800 Qr
TVJ= 100C IF= 60A IF= 30A IF= 15A
IRM
30 A 25 20 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30 20
600
TVJ=100C TVJ=25C
400 10 200 5 0
10 0
0
1
2 VF
3V
0 100
A/s 1000 -diF /dt
0
200
400
600 A/s 800 -diF /dt
1000
Fig. 21. Forward current IF versus VF
2.0
Fig. 22. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 23. Peak reverse current IRM versus -diF/dt
20 V V FR 15
TVJ= 100C VR = 300V
TVJ= 100C IF = 30A VFR tfr
1.00 tfr 0.75 s
1.5 Kf 1.0
trr 80
IRM
70 0.5
IF= 60A IF= 30A IF= 15A
10
0.50
5
0.25
Qr
0.0 60 0 0.00 600 A/s 1000 800 diF /dt
0
40
80
120 C 160 T VJ
0
200
400
600 -diF /dt
800 A/s
1000
0
200
400
Fig. 24. Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 25. Recovery time trr versus -diF/dt
Fig. 26. Peak forward voltage VFR and tfr versus diF/dt
1
0.1 Z thJC
ZthJC - K/W
0.1
0.01
0.01
DSEP 29-06
0.001 0.00001 0.001 0.0001
0.0001
0.001
0.01
0.1
t
s
1
0.001
0.01 Time - Seconds
0.1
1
Fig. 27. Transient thermal resistance junction to case
(c) 2008 IXYS CORPORATION, All rights reserved

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