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PD - 93969
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si) RDS(on) 0.154 0.154 ID -29A -29A
IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655
RAD-Hard
TM
HEXFET TECHNOLOGY
(R)
QPL Part Number JANSR2N7426U JANSF2N7426U
SMD-2
International Rectifier's RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TM
HEXFET(R)
Features:
n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight -29 -18 -116 300 2.4 20 500 -29 30 -20 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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1
11/21/00
IRHNA9260, JANSR2N7426U
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-200 -- -- -- -2.0 14 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.27 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.154 0.159 -4.0 -- -25 -250 -100 100 300 65 58 37 141 148 220 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -18A VGS = -12V, ID = -29A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -18A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -29A VDS = -100V VDD = -100V, ID = -29A RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6143 915 159
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -29 -116 -3.0 738 12
Test Conditions
A
V ns C Tj = 25C, IS = -29A, VGS = 0V Tj = 25C, IF = -29A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 1.6 0.42 --
Units
C/W
Test Conditions
soldered to a 2" square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
2
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Radiation Characteristics
IRHNA9260, JANSR2N7426U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) V SD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage
100K Rads(Si)1
300K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS= -160V, VGS =0V VGS = -12V, ID =-18A VGS = -12V, ID = -18A VGS = 0V, IS = -29A
Min -200 -2.0 -- -- -- -- -- --
Max
Min
Max -- -5.0 -100 100 -25 0.161 0.160 -3.0
-- -200 -4.0 -2.0 -100 -- 100 -- - 25 -- 0.155 -- 0.154 -3.0 -- --
1. Part number IRHNA9260 2. Part number IRHNA93260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET MeV/(mg/cm2)) 28.0 36.8 Energy (MeV) 285 305 Range (m) 43.0 39.0 VDS (V) @VGS=0V @VGS=5V @VGS=10V -200 -200 -200 -200 -200 -125 @VGS=15V -200 -75 @VGS=20V -- --
-250 -200 VDS -150 -100 -50 0 0 5 10 VGS 15 20 Cu Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA9260, JANSR2N7426U
Pre-Irradiation
1000
100
-5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
20s PULSE WIDTH T = 150 C
J 1 10 100
10 1
20s PULSE WIDTH T = 25 C
J 10 100
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -29A
-I D , Drain-to-Source Current (A)
2.0
1.5
100
1.0
0.5
10 5.0
V DS = -50V 20s PULSE WIDTH 8.0 9.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHNA9260, JANSR2N7426U
10000
8000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -29A
16
VDS = 160V VDS = 100V VDS = 40V
C, Capacitance (pF)
6000
Ciss
12
4000
8
2000
C oss C rss
4
0 1 10 100
0 0 50 100 150
FOR TEST CIRCUIT SEE FIGURE 13
200 250 300 350
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS (on)
-ISD , Reverse Drain Current (A)
100
TJ = 150 C
-I D, Drain-to-Source Current (A)
100
10
TJ = 25 C
100s
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 -VDS , Drain-toSource Voltage (V)
1ms
1
10ms
0.1 0.0
V GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA9260, JANSR2N7426U
Pre-Irradiation
30
V DS VGS RG
RD
25
D.U.T.
+
-ID , Drain Current (A)
20
-12V
15
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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-
V DD
Pre-Irradiation
IRHNA9260, JANSR2N7426U
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
1200
RG
D .U .T.
IA S
VD D A D R IV E R
900
ID -13A -18.3A BOTTOM -29A TOP
-20V -12V
tp
0.01
600
15V
300
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
IAS
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
-12V 12V
.2F .3F
VG
VGS
-3mA
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-12 V
VDS
7
IRHNA9260, JANSR2N7426U
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD =-50V, starting TJ = 25C, L = 1.2mH, Peak IL= -29A, VGS = -12V ISD - 29A, di/dt -377A/s, VDD - 200V, TJ 150C Pulse width 300 s; Duty Cycle 2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A
Case Outline and Dimensions -- SMD-2
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