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| www..com IRF630M IRF630MFP N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP MESH OVERLAYTM MOSFET TYPE IRF630M IRF630FPM s s s s VDSS 200 V 200 V RDS(on) < 0.40 < 0.40 ID 9A 9A TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB's. .com .APPLICATIONS s MONITOR DISPLAYS s GENERAL PURPOSE SWITCH DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter IRF630M Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 75 0.6 5 --65 to 150 150 (1)ISD 9A, di/dt 300A/s, V DD V(BR)DSS, Tj TJMAX. (**) Limited only by Maximum Temperature Allowed Value IRF630MFP 200 200 20 9 (**) 5.7 (**) 36 30 0.24 5 2500 Unit V V V A A A W W/C V/ns V C C (*)Pulse width limited by safe operating area October 2001 1/9 .com .com DataSheet 4 U .com www..com IRF630M / FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.67 62.5 300 TO-220FP 4.17 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 200 1 50 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 4.5 A Min. 2 Typ. 3 0.35 Max. 4 0.40 Unit V t4U.com DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance .com Test Conditions VDS > ID(on) x RDS(on)max, ID = 4.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3 Typ. 4 540 90 35 Max. Unit S DataSh ee 700 120 50 pF pF pF 2/9 .com .com DataSheet 4 U .com www..com IRF630M / FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 100 V, ID = 4.5 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 9 A, VGS = 10V Min. Typ. 10 15 31 7.5 9 Max. 14 20 45 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 160V, ID = 9 A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 12 12 25 Max. 17 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 9 A, VGS = 0 ISD = 9 A, di/dt = 100A/s V.com DD = 50 V, T j = 150C (see test circuit, Figure 5) 170 0.95 11 Test Conditions Min. Typ. Max. 9 36 1.5 Unit A A V ns C A t4U.com DataSh ee Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 .com .com DataSheet 4 U .com www..com IRF630M / FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics t4U.com .com DataSh ee Transconductance Static Drain-source On Resistance 4/9 .com .com DataSheet 4 U .com www..com IRF630M / FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature t4U.com .com DataSh ee Source-drain Diode Forward Characteristics 5/9 .com .com DataSheet 4 U .com www..com IRF630M / FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit t4U.com .com DataSh ee Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 .com .com DataSheet 4 U .com www..com IRF630M / FP TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 t4U.com .com DataSh D E ee A C D1 L2 F1 G1 Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/9 .com .com DataSheet 4 U .com www..com IRF630M / FP TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 t4U.com O .com DataSh ee A B L3 L6 L7 F1 D F G1 E H F2 123 L2 L4 8/9 .com .com DataSheet 4 U .com G www..com IRF630M / FP t4U.com .com Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9 .com .com DataSheet 4 U .com |
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