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| 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual band GSM/PCN designs. The ITT2110AH and ITT2111AH include a built-in negative voltage generator, while the ITT2112AH is a stand-alone dual bias PA. Also, the ITT2110AH has a detected power "sense" output that eliminates the need for a coupler and detector in the AGC circuit. PRELIMINARY DATA SHEET VOSC N/C N/C N/C GND RFIN GND VD1 VD2 VD3 GND GND GND VD4 VNVG COSC1a COSC1b COSC2a COSC2b VOUT GND VG VSENSE GND RFOUT RFOUT RFOUT GND Features * * * * * Single Bias (ITT2110AH, ITT2111AH) Detected Output Power Sense (ITT2110AH) Class AB Operation Self-Aligned MSAG(R)-Lite MESFET Process Guaranteed Stability and Ruggedness Typical 3.5 Volt Performance 35.2 dBm Power Output 35.2 dB Power Gain 41% Power Added Efficiency MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating DC Supply Voltage (Pins 8, 9, 10, 14) DC Gate Bias Voltage (Pin 21) DC Supply Voltage (NVG - ITT2110AH, ITT2111AH: Pins 1, 28) RF Input Power Junction Temperature Storage Temperature Range 28 pin narrow body SSOP ITT2110AH Symbol VDD VG VOSC,VNVG PIN TJ TSTG Value 10 -5 10 10 150 -40 to +150 Unit Vdc Vdc Vdc mW C C ELECTRICAL CHARACTERISTICS VDD=3.5 V, PIN=0 dBm, TA=25 C, Input and output externally matched to 50 . Characteristic Frequency Range Output Power (VCTL adjusted for desired output power) Power Gain (POUT = 35.2 dBm) Power Added Efficiency (POUT = 35.2 dBm) Harmonics (POUT = 35.2 dBm) Input VSWR (POUT = 35.2 dBm), 50 Ref. Thermal Resistance (Junction of 4th stage FET to solder point of pin 11) Load Mismatch (VDD = 5.1V, VSWR = 10:1, PIN = +6 dBm) Stability (PIN = -3 to +10 dBm, VDD = 2 to 5.1 V, POUT < 35.2 dBm, Load VSWR = 10:1) Preliminary Data - Specifications Subject to Change Without Notice Symbol POUT GP 2o, 3o -- RTH J-S -- -- Typical 880 to 915 35.2 35.2 41 <-40 <2:1 17 Unit MHz dBm dB % dBc -- C/W No Degradation in Power Output All non-harmonically related outputs more than 70 dB below desired signal 901968 C, December 1998 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH APPLICATION INFORMATION VREG k 4700 pF 47 k PRELIMINARY DATA SHEET Note: Electrical data were taken with an evaluation board using the schematic shown in Figure 1, pulsed according to the ETSI GSM specification. 20 k VCTL k 4700 pF ADI 8531 VNVG 1 28 27 26 25 2.2 pF 5 6 nH 7 8 9 39 nH 10 11 4700 pF F F 12 13 22 nH 14 24 23 22 21 20 19 18 17 16 15 13 pF 100 pF 0.1 F 0.1 F + VOSC 10 F RFIN VSENSE VDD RFOUT Figure 1. Evaluation Board Schematic (ITT2110AH) The ITT2111AH and ITT2112AH do not have the Vsense output. The ITTT2112AH does not have the internal oscillator and NVG. All other portions of the schematic are identical for each of the three parts. Biasing: The negative voltage generator must be on (VNVG and VOSC fully biased) and the control voltage must be low (VCTL <= 0.2 V) prior to the application of RF input power and drain bias voltage. Reverse the sequence when turning the part off -- remove the RF input and disable drain bias before disabling the negative voltage generator. VREG should be from a regulated source so that it will not increase to the battery charging voltage and exceed the rail to rail specification of the op amp. VDD, VNVG, and VOSC may be tied to unregulated sources. VOSC may be turned off during the transmit pulse to eliminate all spurious noise from the negative voltage generator. Alternatively, filtering may be used to limit NVG emissions. Preliminary Data - Specifications Subject to Change Without Notice 901968 C, December 1998 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH TYPICAL CHARACTERISTICS (ITT2110AH) 50 40 30 20 10 0 -10 -20 -30 -40 -50 0.0 V DD = 3.5 V PIN = 0 dBm = 902.5 PRELIMINARY DATA SHEET PAE POUT V SENSE 300 270 240 210 180 150 120 90 60 30 0 2.5 50 Pout (dBm), PAE (%) PAE 6:1 5:1 POUT POUT (dBm), PAE (%) 40 30 20 10 VSWR V DD = 3.5 V PIN = 0 dBm Vsense (mV) 3:1 2:1 1:1 0 850 870 890 910 930 Frequency (MHz) 0.5 1.0 1.5 Vctl (Volts) 2.0 950 Figure 2. Power, Efficiency and Vsense vs. Control Voltage 50 45 40 35 30 25 20 15 10 5 0 -7.0 400 360 320 280 240 200 160 120 80 40 0 5.0 Figure 3. Power, Efficiency and VSWR vs. Frequency 50 45 40 35 30 25 20 15 10 5 0 2.5 PAE Pout (dBm), PAE (%) Pout (dBm), PAE (%) PAE POUT POUT V SENSE V DD = 3.5 V = 902.5 Vsense (mV) PIN = 0 dBm = 902.5 MHz -5.0 -3.0 -1.0 1.0 Pin (dBm) 3.0 3 3.5 4 4.5 Vdd (volts) 5 5.5 Figure 4. Power, Efficiency and Vsense vs. Input Power 0 Figure 5. Power, Efficiency and Vsense vs. Drain Voltage Output power (dBc) -10 -20 -30 -40 -50 -60 -70 V DD = 3.5 V PIN = 0 dBm POUT = 35.2 dBm = 902.5 MHz 2 3 4 Harmonics 5 6 Figure 6. Harmonics Preliminary Data - Specifications Subject to Change Without Notice 901968 C, December 1998 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3 VSWR 4:1 |
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