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3.6V Integrated RF Front-End for DECT ITT2207GF
FEATURES
* * * * * * * 3.6V Operation Single Positive Supply 55% Power Added Efficiency 100% Duty Cycle 1.6 dB LNA Noise Figure 16 Pin TSSOP Full Downset Plastic Package (R) Self-Aligned MSAG -Lite MESFET Process
PRELIMINARY
DESCRIPTION
The ITT2207GF is an integrated DECT front-end (R) based on GaAsTEK's GaAs Self-Aligned MSAG MESFET Process. This product has an integrated power amplifier, low noise amplifier, and switch in one surface mount package.
MAXIMUM RATINGS
(TA = 25 C unless otherwise noted)
Rating DC Supply Voltage Reverse DC Supply Voltage RF Input Power, PAIN RF Input Power, LNAIN Junction Temperature Storage Temperature
Symbol VDD -VDD PIN PIN TJ TSTG
Value +5.5 -0.7 +10 +10 +150
-40 to +175
Unit V V mW mW C C
ELECTRICAL CHARACTERISTICS Ts (Solder Point Temperature) = 40 C
Characteristic Frequency Transmit Path (Power Amplifier + T/R Switch) VDD1,2,3= 3.6V, PIN=-2 dBm, Load Power (at Ant) Current Consumption Input VSWR Harmonics Duty Cycle Forward Isolation (RFIN to Ant) VDD1,2,3=0.0V Forward Isolation (ANT to LNAOUT) Receive Path (T/R Switch + Low Noise Amplifier) VDD1,2,3= 0.0V, Current Consumption Noise Figure (Ant to LNAOUT) Gain (Ant to LNAOUT) Third-Order Input Intercept Point Reverse Isolation (LNAOUT to ANT) Thermal Resistance (Junction of 3rd stage FET to solder point of pin 13) Symbol POUT IDD1,2,3
LNAENABLE
Min 1880
Typ 25 226
Max 1930
Unit MHz
TRSUP=3.6V, TRSWIT=3.6V, LNAENABLE=0.0V, =1900MHz
dBm mA 2:1 dBc % dB dB
-41 100 54 34
TRSUP=3.6V, TRSWIT=0.0V, LNAENABLE=2.4V, =1900MHz
NF G IIP3 Rth
4.3 2.1 15 3.5 18 37.5
mA dB dB dBm dB C/W
Specifications Subject to Change Without Notice
902222 H, December 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1
3.6V Integrated RF Front-End for DECT ITT2207GF
TYPICAL CHARACTERISTICS
60 50 POUT (dBm), PAE (%) 40 POUT PAE IDD 0.300 0.250 0.200 IDD (A) POUT (dBm) and PAE (%) 60
PAE
PRELIMINARY
0
50 40
-5 -10 IRL (dB)
30 20 VDD = 3.6V 10 0 -10 -8 -6 -4 TS = 40 C Freq = 1900 MHz
0.150 0.100 0.050 0.000
30
POUT
-15
20 PIN = -2 dBm 10 VDD = 3.6 V TS = 40 C
IRL
-20 -25
-2
0
2
4
0 1800
1850
1880
1900
1930
1950
-30 2000
P IN (dBm)
Frequency (MHz)
Figure 1. Output power, efficiency and supply current vs. input power
60 50 POUT (dBm), PAE (%) PAE IDD POUT 40 30 20 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDD (V) PIN = -2 dBm Freq. = 1900 MHz TS = 40 C 0.350 0.300 0.250 0.200 0.150 IDD (A)
Figure 2. Output power, efficiency and input return loss vs. frequency.
35 25 15 POUT (dB m ) 5 -5 -15
PIN = -2 dBm f o = 1900 MHz VDD = 3.6 V TS = 40 C
0.100 0.050
-25 -35 fo 2fo 3fo 4fo 5fo
Figure 3. Output power, efficiency and supply current vs. supply voltage
Figure 4. Harmonics
Specifications Subject to Change Without Notice
902222 H, December 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2
3.6V Integrated RF Front-End for DECT ITT2207GF
TYPICAL CHARACTERISTICS (CONT)
70 60 PAE POUT (dBm), PAE (%) 50 -10 40 -15 30 20 10 0 -60 -40 -20 0 20 40 60 80 Temperature (C) Freq. = 1900 MHz PIN = -2 dBm VDD = 3.6V -30 100 IRL -25 1 0 -60 -40 -20 0 20 2 POUT -20 IRL (dB) 0 9 8 -5 7 NF (dB), IDD (mA) 6 5 4 3 Freq. = 1900 MHz LNAENABLE = 2.4V
PRELIMINARY
18 16 Gain 14 12 10 IDD 8 6 NF 4 2 0 100 Gain (dB)
40
60
80
Temperature (C)
Figure 5. Output power, efficiency and supply current vs. temperature
Figure 6. Noise figure, gain and supply current vs. temperature
Specifications Subject to Change Without Notice
902222 H, December 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3
3.6V Integrated RF Front-End for DECT ITT2207GF
APPLICATION INFORMATION
PRELIMINARY
ANT
Vdd
RF IN LNA enable
902045x8
TR swit TR sup
LNA OUT
Figure 7. Component layout and printed circuit drawing for evaluation board.
Specifications Subject to Change Without Notice
902222 H, December 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 4
3.6V Integrated RF Front-End for DECT ITT2207GF
APPLICATION INFORMATION (CONT)
PRELIMINARY
Figure 8. Evaluation Board Schematic External components: C1 - C11 MuRata 100 pF 0402 GRM36C0G101J50 C12 - C14 MuRata 0.1 F 0402 GRM36Y5V104Z1 C15 - C17 MuRata 33 pF 0402 GRM36C0G330J50 C18 Dielectric Labs 2.2 pF 0603 C06CF2R2B5UL C19 Dielectric Labs 2.4 pF 0603 C06CF2R4B5UL C20 MuRata 22 pF 0402 GRM36C0G220G50 L1 - L3 Coilcraft 27 nH 0603 0603CS-27NXJBB L4 Toko 3.3 nH 0603 LL1608-F3N3K L5 Coilcraft 7.5 nH 0402 0402 0402CS-7N5XJB L6 Toko 2.7 nH 0805 LL2012-F2N7S R1 - R2 Panasonic 301 0603 ERJ-3EKF3010 R3 Panasonic 10 0603 ERJ-3EKF10R0V D1 Siemens Pin Diode BAR6303W
Specifications Subject to Change Without Notice
902222 H, December 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 5
3.6V Integrated RF Front-End for DECT ITT2207GF
GaAsTEK TEST SET UPS
H P 8753 D netw ork ana lyzer
PRELIMINARY
A tte nuator
902045x7

R e actel low pass filter (<21 00M H z)
Figure 9. Transmit path power, current, and spurious.
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902045x7
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UTE Microwave isolator 1.6-3.2GHz
Figure 10. Receive path noise figure and gain.
Specifications Subject to Change Without Notice
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G igatronics 8541 pow e r m eter
HP83620A synthesized sweeper Avantek mixer
UTE Microwave isolator 1.6-3.2GHz
902222 H, December 1999
GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 6

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