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PTF210101M
High Power RF LDMOS Field Effect Transistor 10 W, 2110 - 2170 MHz
Description
The PTF210101M is an unmatched 10-watt GOLDMOS (R) FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.
PTF210101M Package PG-RFP-10
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 180 mA, = 2170 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz bandwidth
-25 30
Features
* Typical WCDMA performance - Average output power = 2.0 W - Gain = 15 dB - Efficiency = 20% - ACPR = -45 dB Typical CW performance - Output Power at P-1dB = 10 W - Gain = 14 dB - Efficiency = 50% Integrated ESD protection: Human Body Model Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power Pb-free and RoHS compliant
Efficiency
-30 25 20 15
-35 -40 -45 -50 -55 24 28 32 36
Drain Efficiency (%)
Adjacent Channel Power Ratio (dBc)
*
ACPR
* * * * *
10 5 0
Average Output Power (dBm)
RF Characteristics
Two-Tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
15 35 --
Typ
-- -- --
Max
-- -- -28
Unit
dB % dBc
D
IMD
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 8
*See Infineon distributor for future availability.
Rev. 02.1, 2009-02-18
PTF210101M
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 A VDS = 28 V, IDQ = 180 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.83 3.2 --
Max
-- 1.0 -- 4.0 1.0
Unit
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 10 W DC ) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 150 19 0.15 -40 to +150 6.5
Unit
V V C W W/C C C/W
Ordering Information
Type
PTF210101M
Package Outline
PG-RFP-10
Package Description
Molded plastic, SMD
Marking
0211
*See Infineon distributor for future availability. Data Sheet 2 of 8 Rev. 02.1, 2009-02-18
PTF210101M
Typical Performance (data taken in production test fixture)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 180 mA, = 2170 MHz
Two-Tone Drive-up
VDD = 28 V, IDQ = 180 mA, 1 = 2169, 2 = 2170 MHz
17
60
-20
Efficiency
16 50
Intermodulation Distortion (dBc)
-30 -40 -50 -60 -70 -80 26 28 30 32 34 36 38
IM3 IM5 IM7
Gain (dB)
15 14 13 12 11 15
Gain
40 30 20 10 0
Drain Efficiency (%)
20
25
30
35
40
45
40
42
Output Power (dBm)
Output Power, PEP (dBm)
Two-Tone Power Sweep
VDD = 28 V, IDQ = 180 mA, 1 = 2169, 2 = 2170 MHz
Broadband Performance
VDD = 28 V, IDQ = 180 mA, POUT = 41 dBm
16 15
45 40
60
-10
Gain (dB), Efficiency (%)
35 30 25
Efficiency (%)
Gain Gain (dB)
14 13 12 11 26 28 30 32 34 36 38 40 42
40 30 20 10
-12
Return Loss
Efficiency
20 15 10 5 0
-13 -14
Gain
2120 2140 2160
-15 -16 2180
0 2100
Output Power, PEP (dBm)
Frequency (MHz)
Data Sheet
3 of 8
Rev. 02.1, 2009-02-18
Input Return Loss (dB)
50
Efficiency
-11
PTF210101M
Typical Performance (cont.)
Voltage Sweep
IDQ = 180 mA, = 2110 MHz
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current.
1.04 0.05 A 0.28 A 0.51 A 0.74 A 0.97 A 1.20 A
42 41 40 39 38 37 20 22 24 26 28 30 32 34
Normalized Bias Voltage
1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20 0 20 40 60 80 100
Output Power (dBm)
Supply Voltage (V)
Case Temperature (C)
Broadband Circuit Impedance
D
Z Source
Z Load
G S
Frequency
MHz 2080 2110 2140 2170 2200 R
Z Source
jX -6.0 -5.8 -5.2 -4.9 -4.5 2.4 2.1 1.8 1.6 1.4
Z Load
R 2.1 2.1 2.1 2.0 2.0 jX -3.3 -3.1 -2.9 -2.8 -2.6
Data Sheet
4 of 8
Rev. 02.1, 2009-02-18
PTF210101M
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 220 V C3 0.001F R4 2KV R5 10 V C4 10 F 35V
R6 10 V C5 0.1F R7 1K V C6 10F 35V C7 10pF l8 R8 220 V C12 10pF C13 0.1F C14 1F C15 10F 50V
VDD
l11
C16 10pF
C9 10pF RF_IN
l7
DUT
l1
l2
C8 1.2pF
l3
l4
l5
C10 1.4pF
l6
l9
l10
C11 2.4pF
l12
l13
RF_OUT
Reference circuit schematic for = 2170 MHz
Circuit Assembly Information
DUT PCB PTF210101M 0.76 mm [.030"] thick, r = 3.48 LDMOS Transistor Rogers 4350 1 oz. copper
Microstrip
Electrical Characteristics at 2170 MHz1
0.048 0.139 0.034 0.025 0.068 0.028 0.176 0.193 0.015 0.233 0.197 0.020 0.072 , 50.0 , 50.0 , 50.0 , 9.6 , 9.6 , 9.6 , 81.0 , 81.0 , 12.9 , 12.9 , 67.0 , 50.0 , 50.0
Dimensions: L x W (mm)
3.99 x 1.63 11.63 x 1.63 2.84 x 1.63 1.93 x 14.27 5.21 x 14.27 2.16 x 14.27 15.11 x 0.69 16.66 x 0.69 1.19 x 10.16 17.93 x 10.16 16.76 x 1.02 1.68 x 1.63 6.68 x 1.63
Dimensions: L x W (in.)
0.157 0.458 0.112 0.076 0.205 0.085 0.595 0.656 0.047 0.706 0.660 0.066 0.263 x x x x x x x x x x x x x 0.064 0.064 0.064 0.562 0.562 0.562 0.027 0.027 0.400 0.400 0.040 0.064 0.064
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13
1Electrical characteristics are rounded.
Data Sheet
5 of 8
Rev. 02.1, 2009-02-18
210101 _ch ms
PTF210101M
Reference Circuit (cont.)
R5 C4 C5 R6 R7 C7 R4
10 35 V
+
R3 C3 R2 R1 LM Q1 C1 QQ1 C2 C12 C13 C14
C6
+
VDD
C15
RF_IN C8 C9 C10 C11 C16
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4, C6 C5, C13 C7, C9, C12, C16 C8 C10 C11 C14 C15 Q1 QQ1 R1 R2 R3, R8 R4 R5, R6 R7
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.1 F Ceramic capacitor, 10 pF Ceramic capacitor, 1.2 pF Ceramic capacitor, 1.4 pF Ceramic capacitor, 2.4 pF Capacitor, 1.0 F Tantalum capacitor, 10 F, 50 V Transistor Voltage regulator Chip Resistor 1.2 k-ohms Chip Resistor 1.3 k-ohms Chip Resistor 220 ohms Potentiometer 2 k-ohms Chip Resistor 10 ohms Chip Resistor 1 k-ohms
*Gerber Files for this circuit available on request Data Sheet 6 of 8 Rev. 02.1, 2009-02-18
10 35V
R8
RF_OUT
210101M_C_02
210101m_assy
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC ATC Garrett Electronics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND PCS6106TR-ND PCC104BCT-ND 100B 100 100B 1R2 100B 1R4 100B 2R4 920C105 TPSE106K050R0400 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P221ECT-ND 3224W-202ETR-ND P10ECT-ND P1KECT-ND
PTF210101M
Package Outline Specifications Package PG-RFP-10 (TSSOP-10 Outline)
0.15 MAX.
1.1 MAX.
0.85 0.1
H
3 0.1
C
+0.08 0.125-0.05
A
0.22 0.05
0.09
0.5
0.1 A
M
0.08
ABC
4.9
0.42 -0.10
+0.15
0.25
M
6 MAX.
ABC
PG-RFP-10
10
6
1 3 0.1
5
B
Index marking
Diagram Notes--unless otherwise specified: 1. 3. All tolerances 0.127 [.005] unless specified otherwise. Lead thickness: 0.09 2. Dimensions are mm 4. Pins: 1 - 5 = gate, underside = source, 6 - 10 = drain Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
7 of 8
Rev. 02.1, 2009-02-18
PTF210101M Confidential--Limited Distribution Revision History: 2009-02-18 2005-12-05, Data Sheet Previous version: Page 6 1 Subjects (major changes since last revision) Fixed typing error Revise package information and photo
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-18 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 02.1, 2009-02-18

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