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PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 - 2025 MHz and 2110 - 2170 MHz
Description
The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS (R) FETs intended for TD-SCDMA applications from 2010 to 2025 MHz, and WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTF210451E Package H-30265-2 PTF210451F Package H-31265-2
3-Carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ = 580 mA, C = 2017.5 MHz
Efficiency Adj Low er Adj Upper Alt Low er Alt Upper
Features
* *
-38 -42 -46 -50 -54 -58 ACPR (dBc)
Thermally-enhanced packages, Pb-free and RoHS-compliant Internal matching for wideband performance Typical three-carrier TD-SCDMA performance - Average output power = 3 W - Gain = 14 dB - Efficiency = 12.5% - ACPR = -50 dBc Typical CW performance - Output power at P-1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power
25 20 Efficiency (%) 15 10 5 0 0.0
*
*
* * * *
3.0
6.0
9.0
Output Power (W)
RF Characteristics
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 500 mA, POUT = 11.5 W AVG
1 = 2140 MHz, 2 = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IMD Gps D
Min
-- -- --
Typ
-37 14 27
Max
-- -- --
Unit
dBc dB %
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 10
*See Infineon distributor for future availability.
Rev. 06, 2008-02-13
PTF210451E PTF210451F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 500 mA, POUT = 45 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps D IMD
Min
13 35 --
Typ
14 38 -32
Max
-- -- -30
Unit
dB % dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, ID = 10 A VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 500 mA VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.2 3.2 --
Max
-- 1.0 -- 4.0 1.0
Unit
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 45 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 175 1.0 -40 to +150 1.0
Unit
V V C W W/C C C/W
Ordering Information
Type and Version
PTF210451E V1 PTF210451F V1
Package Outline
H-30265-2 H-31265-2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended
Marking
PTF210451E PTF210451F
*See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 06, 2008-02-13
PTF210451E PTF210451F
Typical Performance (data taken in production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 500 mA, POUT = 40 dBm
30 0
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 500 mA, = 2170 MHz
17 60
Efficiency
Gain (dB), Efficiency (%) Input Return Loss (dB)
Gain (dB)
20 15 10 5 0 2070
-10 -15
15
40
Gain
14 13 12 34 36 38 40 42 44 46 48 30 20 10
Gain
-20 -25 -30 2210
Input Retrun Loss
2105 2140 2175
Frequency (MHz)
Output Power (dBm)
Intermodulation Distortion vs. Output Power for selected currents
VDD = 28 V, = 2140 MHz, tone spacing = 1 MHz
-30 -35 0.40 A -40 -25 -30 -35
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 500 mA, = 2140 MHz, POUT = 45 W PEP
3rd Order
IMD (dBc)
IMD (dBc)
0.60 A -45 -50 -55 -60 34 36 38 40 42 44 46 48 0.45 A
-40 -45 -50
5th Order
7th Order
0.50 A
0.55 A
-55 -60 0 10 20 30 40
Output Power, PEP (dBm)
Tone Spacing (MHz)
Data Sheet
3 of 10
Rev. 06, 2008-02-13
Drain Efficiency (%)
25
Efficiency
-5
16
50
PTF210451E PTF210451F
Typical Performance (cont.)
Two-tone Drive-Up
VDD = 28 V, IDQ = 500 mA, = 2140 MHz, tone spacing = 1 MHz
-25 -30 -35 45 40 35 30
Single-carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 500 mA, = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
-35 30
Drain Efficiency (%)
Efficiency
Efficiency Drain Efficiency (%)
-40 25 20 15
IMD (dBc)
ACPR (dB)
-40 -45 -50 -55 -60 -65 34 36 38 40 42 44 46 48
-45 -50 -55 -60 30 32 34 36 38 40 42
IM3
25 20
IM5 IM7
15 10 5
ACPR Up ACPR Low
10 5
Peak Output Power (dBm)
Avgerage Output Power (dBm)
IM3, Gain & Drain Efficiency vs. Supply Voltage
IDQ = 500 mA, = 2140 MHz, POUT = 44.75 dBm (PEP), tone spacing = 1 MHz
0 -5 50
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage. Series show current.
1.03
Normalized Bias Voltage
45
Gain (dB), Drain Efficiency (%)
3rd Order IMD (dBc)
-10 -15 -20 -25 -30 -35 -40 -45 23 24 25 26 27 28 29
Efficiency
1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20
4.50 A 3.75 A 3.00 A 2.25 A 1.50 A 0.75 A
40 35 30
IM3 Up Gain
25 20 15 10 5 0 30 31 32 33
5
30
55
80
105
Supply Voltage (V)
Case Temperature (C)
Data Sheet
4 of 10
Rev. 06, 2008-02-13
PTF210451E PTF210451F
Typical Performance (cont.)
6-Carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ = 580 mA, C = 2017.5 MHz
Efficiency Adj Low er Adj Upper Alt Low er Alt Upper
4-Carrier TD-SCDMA Drive-up
VDD = 28 V, IDQ = 580 mA, C = 2017.5 MHz
Efficiency Alt Low er Alt Upper
25 20 Efficiency (%) 15 10 5 0 0.0
Adj Low er Adj Upper
-38 -42
25 20 Efficiency (%)
ACPR (dBc)
-38 -42 -46 -50 -54 -58 ACPR (dBc)
0.3
-46 -50 -54 -58 2.0 4.0 Output Power (W) 6.0 8.0
15 10 5 0 0.0 2.0 4.0 Output Power (W) 6.0 8.0
Broadband Circuit Impedance Data
E
Z0 = 50
0 .1
D
Z Source
Z Load
- WAVELENGTHS
TOW A RD
GE N
0.0
0.1
G S
Frequency
MHz 2070 2110 2140 2170 2210 R
Z Source
jX -9.36 -8.97 -8.52 -8.16 -7.79 R 4.94 4.90 4.96 4.96 4.88 5.72 5.17 4.88 4.59 4.08
Z Load
jX -0.87 -0.69 -0.60 -0.49 -0.39
LOAD S TOW ARD E NGTH
2210 MHz 2070 MHz
0.1
VEL
Z Source
2210 MHz 2070 MHz
0. 2
WA <---
0. 3
Data Sheet
5 of 10
Rev. 06, 2008-02-13
0.2
Z Load
PTF210451E PTF210451F
Test Circuit
210451E SCHEMATIC DWG FOR DATA SHEET.dwg
Test circuit schematic for 2170 MHz Circuit Assembly Information DUT PTF210451E or PTF210451F Circuit Board 0.79 mm [.031"] thick, r = 4.5 Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 Electrical Characteristics at 2170 MHz 1 0.047 , 45 0.040 , 23 0.132 , 66 0.028 , 45 0.018 , 12 0.074 , 7 0.152 , 9 0.257 , 68 0.027 , 44 0.056 , 56 0.036 , 19 0.076 , 44
LDMOS Transistor Rogers TMM4, 2 oz. copper Dimensions: L x W (mm) 3.48 x 1.78 2.87 x 4.57 10.08 x 0.89 2.08 x 1.78 1.27 x 10.06 4.98 x 17.68 10.34 x 13.56 19.76 x 0.84 1.98 x 1.83 4.22 x 1.22 2.57 x 5.74 5.64 x 1.80 Dimensions: L x W (in.) 0.137 x 0.070 0.113 x 0.180 0.397 x 0.035 0.082 x 0.070 0.050 x 0.396 0.196 x 0.696 0.407 x 0.534 0.778 x 0.033 0.078 x 0.072 0.166 x 0.048 0.101 x 0.226 0.222 x 0.071
1Electrical Characteristics are rounded.
Data Sheet
6 of 10
Rev. 06, 2008-02-13
PTF210451E PTF210451F
Test Circuit (cont.)
210451E ASSEMBLY DWG FOR DATA SHEET.dwg
Test circuit assembly diagram* (not to scale)
Component
C1 C2, C8 C3, C7 C4, C6 C5, C9 L1 R1, R2 R3
Description
Capacitor, 10 F, 35 V, Tant TE series Capacitor, 0.01 F Capacitor, 1 F Capacitor, 7.5 pF Capacitor, 10 pF Ferrite Bead Resistor, 3.3K ohm, 1/4 W Resistor, 10 ohm, 1/4 W
Suggested Manufacturer P/N or Comment
Digi-Key ATC ATC ATC ATC Elne Magnetic Digi-Key Digi-Key PCS6106TR-ND, SMD X08J103AFB ATC 200B103MW X24L105BVC 100B 7R5 100A 100 #BDS31314.6-452 P3.3K ECT-ND P10 ECT-ND
*Gerber files for this circuit available on request Data Sheet 7 of 10 Rev. 06, 2008-02-13
PTF210451E PTF210451F
Package Outline Specifications Package H-30265-2
(45 X 2.03 [.080]) 7.11 [.280] C L
D
2X 2.590.38 [.107 .015] 15.600.51 [.614.020] FLANGE 9.78 [.385]
S
C L LID 10.160.25 [.400.010]
G
2X R1.60 [.063] 2x 7.11 [.280] 15.23 [.600] 10.160.25 [.400.010] SPH 1.57 [.062] 4x 1.52 [.060]
3.480.38 [.137.015] 0.0381 [.0015] -A20.31 [.800]
H-30265-2-1-2303
1.02 [.040]
Diagram Notes--unless otherwise specified: 1. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
8 of 10
Rev. 06, 2008-02-13
PTF210451E PTF210451F
Package Outline Specifications (cont.) Package H-31265-2
(45 X 2.03 [.080]) C L
2X 2.590.51 [.102.020]
D
15.49.51 [.610.020]
LID 10.160.25 [.400.010] FLANGE 10.16 [.400]
C L
10.16 [.400]
G
R1.27 [R.050] 2X 7.11 [.280] 4X R0.63 [R.025] MAX
10.160.25 [.400.010] SPH 1.57 [.062]
|0.025 [.001]|-A3.56.38 [.140.015]
S
10.16 [.400]
1.02 [.040]
h-31265-2_265-cases
Diagram Notes--unless otherwise specified: 1. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 0.38 micron [45 15 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 10
Rev. 06, 2008-02-13
PTF210451EF Confidential, Limited Internal Distribution Revision History: 2008-02-13 2006-09-05, Data Sheet Previous Version: Page all 1, 2, 8, 9 10 Subjects (major changes since last revision) Show PTF210451F as released. Update package designation. Update company information.
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS (R) is a registered trademark of Infineon Technologies AG.
Edition 2008-02-13 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 06, 2008-02-13

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