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| Advance Product Information 36 - 40 GHz Power Amplifier * * * * * * TGA1071-EPU 0.25um pHEMT Technology 36-40 GHz Frequency Range 22 dBm Nominal Pout @ P1dB 15 dB Nominal Gain 5V, 120 mA Bias Chip Dimensions 3.4mm x 2.1mm Key Features and Performance Primary Applications * * The TriQuint TGA1071-EPU is a two stage PA MMIC design using TriQuint' proven s 0.25 um Power pHEMT process to support a variety of millimeter wave applications including point-to-point digital radio and point-to-multipoint systems. The two-stage design consists of two 300 um input devices driving a pair of 400 um output devices. The TGA1071 provides 22dBm of output power across 36-40 GHz with a typical small signal gain of 15dB. The TGA1071 requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. 25.00 Point-to-Point Radio Point-Multipoint Radio TGA1071 Typical RF Performance (Fixtured) 20 15 10 Gain and Return Loss (dB) 5 0 -5 -10 -15 -20 -25 32.0 s11 s22 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 Frequency (GHz) Small Signal Gain TGA1071 RF Probe Summary Data 20.00 Pout (dBm) 15.00 10.00 5.00 0.00 36 37 38 39 40 Frequency (GHz) Pout at 1dB Gain Compression Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 1 Advance Product Information Electrical Characteristics RECOMMENDED MAXIMUM RATINGS Symbol V+ I+ PD PIN TCH TM TSTG 1/ 2/ Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 7V .4 A 2.8 W 20 dBm 150 C 320 C -65 to 150 C C Notes 3/ 1/, 2/ These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. Total current for both stages 3/ DC PROBE TESTS (TA = 25 5 C C) Symbol Idss VP1-5 BVGS1 BVGD1-5 Parameter Saturated Drain Current (info only) Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum 140 -1.5 -30 -30 Maximum 658 -0.5 -8 -8 Value mA V V V ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 5 C C) Symbol Parameter Test Condition Vd=5V, Id=120mA F = 36 to 40 GHz F = 38 GHz Limit Min Nom Max 15 13 -10 -10 22 Units Gp Small-signal Power Gain IRL ORL PWR Input Return F = 36 to 40 GHz Loss Output Return F = 36 to 40 GHz Loss Output Power F = 36 to 40 GHz dB dB dB dB dB dBm Note: RF probe data is taken at 0.4 GHz steps Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information Statistical Performance Summary TGA1071 RF Probe Summary Data 25.00 TGA1071 RF Probe Summary Data 14 12 10 Gain (dB) Pout (dBm) 20.00 8 6 4 2 0 36.0 36.4 36.8 37.2 37.6 38.0 38.4 38.8 39.2 39.6 40.0 Frequency (GHz) 15.00 10.00 5.00 0.00 36 37 38 Frequency (GHz) 39 40 Small Signal Gain Output Power Wafer 9818801-2 678 devices TGA1071 RF Probe Summary Data 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 36 36.4 36.8 37.2 37.6 38 38.4 38.8 39.2 39.6 40 Frequency (GHz) 0 -2 -4 s22 (dB) -6 -8 -10 -12 -14 -16 36 TGA1071 RF Probe Summary Data s11 (dB) 36.4 36.8 37.2 37.6 38 38.4 38.8 39.2 39.6 40 Input Return Loss Output Return Loss Frequency (GHz) Freq (GHz) 36.0 36.4 36.8 37.2 37.6 38.0 38.4 38.8 39.2 39.6 40.0 S11 Mag 0.593 0.569 0.508 0.448 0.328 0.191 0.086 0.202 0.324 0.460 0.567 S11 Ang 88.8 83.3 75.6 66.9 59.0 48.8 -18.0 -147.6 -159.9 -170.3 179.8 S21 Mag 5.060 5.037 5.174 5.327 5.142 5.109 5.480 5.274 4.896 4.527 3.929 S21 Ang -116.0 -136.2 -156.1 -172.3 170.3 151.1 132.6 108.3 88.1 67.1 47.1 S12 Mag 0.024 0.030 0.031 0.035 0.036 0.036 0.040 0.036 0.032 0.029 0.023 S12 Ang 179.8 163.2 148.6 133.6 119.4 106.1 90.8 69.8 55.1 44.9 27.3 S22 Mag 0.215 0.210 0.182 0.159 0.228 0.293 0.353 0.494 0.554 0.566 0.576 S22 Ang 125.6 122.5 136.4 151.4 170.4 180.0 -175.6 174.7 166.0 161.5 157.2 Typical s-parameters Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information Mechanical Characteristics Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information Chip Assembly and Bonding Diagram Reflow process assembly notes: * * * * * AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: * * * * * * * vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: * * * * * thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 |
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