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Transistors
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1022 Features
* Optimum for RF amplification of FM/AM radios * High transition frequency fT * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
1 2 (0.65)
Unit: mm
0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06
(0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 200 150 -55 to +150 Unit V V V mA mW C C
1.1+0.2 -0.1
1.1+0.3 -0.1
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: V
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base cutoff current (Emitter open) Forward current transfer ratio * Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance (Common emitter) Symbol ICBO hFE fT NF Zrb Cre Conditions VCB = 10 V, IE = 0 VCB = 10 V, IE = -1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 5 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz 70 150 250 2.8 22 0.9 4.0 50 1.5 Min Typ Max 0.1 220 Unit A MHz dB pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE B 70 to 140 C 110 to 220
0 to 0.1
0.40.2
5
Publication date: March 2003
SJC00112BED
1
2SC2295
PC Ta
240
12
IC VCE
Ta = 25C IB = 100 A
15.0
IC I B
VCE = 10 V Ta = 25C 12.5
Collector power dissipation PC (mW)
200
10
Collector current IC (mA)
160
8
80 A 60 A
Collector current IC (mA)
10.0
120
6
7.5
80
4
40 A
5.0
40
2
20 A
2.5
0
0
40
80
120
160
0
0
6
12
18
0
0
20
40
60
80
100
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (A)
IB VBE
120 VCE = 10 V Ta = 25C 100
50 60
IC VBE
VCE = 10 V
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
Collector current IC (mA)
10
Base current IB (A)
80
40 Ta = 75C 30
25C -25C
60
1 Ta = 75C 25C 0.1 -25C
40
20
20
10
0
0
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
0.01 0.1
1
10
100
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
240 VCE = 10 V
fT I E
400
60
Zrb IE
VCB = 10 V f = 2 MHz Ta = 25C
Reverse transfer impedance Zrb ()
Forward current transfer ratio hFE
Transition frequency fT (MHz)
200
50
300
160
Ta = 75C 25C
40
120 -25C 80
200
30
20
100 VCB = 10 V f = 100 MHz Ta = 25C 0 - 0.1 -1 -10 -100
40
10
0 0.1
1
10
100
0 - 0.1
-1
-10
Collector current IC (mA)
Emitter current IE (mA)
Emitter current IE (mA)
2
SJC00112BED
2SC2295
Cre VCE
3.0
12
NF IE
VCB = 6 V f = 100 MHz Rg = 50 Ta = 25C
bie gie
24 Vie = gie + jbie VCE = 10 V 20
Reverse transfer capacitance Cre (pF) (Common emitter)
f = 10.7 MHz Ta = 25C 2.5
10
Input susceptance bie (mS)
Noise figure NF (dB)
-4 mA 16
-7 mA 100 58
2.0 IC = 3 mA 1.5 1 mA
8
6
12
1.0
4
8
0.5
2
4
0 0.1
1
10
100
0 - 0.1
-1
-10
0
0
IE = -1 mA
-2 mA
f = 10.7 MHz
8
16
24
32
40
Collector-emitter voltage VCE (V)
Emitter current IE (mA)
Input conductance gie (mS)
bre gre
0
bfe gfe
0
boe goe
10.7
- 0.1 IE = -1 mA
Forward transfer susceptance bfe (mS)
Reverse transfer susceptance bre (mS)
yre = gre + jbre VCE = 10 V
f = 10.7 MHz
-20
f = 10.7 MHz - 0.1 mA 58 -1 mA 100 58 -2 mA 100
1.2 yoe = goe + jboe VCE = 10 V 1.0
Output susceptance boe (mS)
- 0.2
-40
0.8
IE = -1 mA 100
- 0.3
58
-60
IE = -4 mA 100 58
0.6 58 0.4
- 0.4
100
-80
- 0.5
-100
yfe = gfe + jbfe VCE = 10 V 0 20 40 60 80 100
0.2 f = 10.7 MHz 0 0 0.1 0.2 0.3 0.4 0.5
- 0.6 - 0.5
- 0.4
- 0.3
- 0.2
- 0.1
0
-120
Reverse transfer conductance gre (mS)
Forward transfer conductance gfe (mS)
Output conductance goe (mS)
SJC00112BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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