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| www..com Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GE2761 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600/650V 1.0 10A The GE2761 series provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Low On-resistance *Simple Drive Requirement *RoHS Compliant *Fast Switching Characteristic Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 O A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 Symbol - /A VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : IAR Tj, Tstg Ratings 600/650 f 30 10 4.4 18 104 0.8 10 -55 ~ +150 Unit V V A A A W W/ A Total Power Dissipation Linear Derating Factor Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.2 62 Unit /W /W 1/4 ISSUED DATE :2005/05/18 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 650 2.0 Typ. 0.6 4.5 53 10 15 16 20 82 36 2770 320 8 Max. 4.0 D 100 10 100 1.0 85 4430 pF Ns nC Unit V V V/ : V S nA uA uA L Test Conditions VGS=0, ID=250uA VGS=0, ID=250uA A Symbol BVDSS BVDSS / Tj Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=3.5A VGS= D 30V VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=3.5A ID=10A VDS=520V VGS=10V VDD=320V ID=10A VGS=10V RG=10 L RD=30 L VGS=0V VDS=15V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Parameter Forward On Voltage3 Reverse Recovery Time 3 Symbol VSD Trr Qrr Min. - Typ. 610 8.64 Max. 1.5 - Unit V ns uC Test Conditions IS=10A, VGS=0V, Tj=25 : IS=10A, VGS=0V dI/dt=100A/ s Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=1.2mH, RG=25 L , IAS=10A. 3. Pulse width 300us, duty cycle 2%. 2/4 ISSUED DATE :2005/05/18 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 ISSUED DATE :2005/05/18 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4 |
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