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| www..com PJ2N9015 PNP Epitaxial Silicon Transistor PRE-APLIFIER, LOW LEVEL&LOW NOISE * * * High total power dissipation (PT=450mW) High hFE and good linearity Complementary to PJ2N9014 TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (T a= 25C) Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating -50 -45 -5 -100 450 150 -55 ~150 Uint V V V mA mW C C Device PJ2N9015CT PJ2N9015CX Operating Temperature -20+85 Package TO-92 SOT-23 P in : 1. Emitter 2. Base 3. Collector P in : 1.Base 2.Emitter 3. Collector ORDERING INFORMATION ELECTRICAL CHARACTERISTICS (T a= 25 C) Characte ristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Base Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Produce Noise Figure Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(ON) C ob fT NF Te st Conditions IC= -100A , IE =0 IC= -1mA , IB=0 IE = -100A , IC=0 VCB= -50V , IE = 0 VEB= -5V , IC=0 VEB= -5V, IC = -1 mA IC= -100 mA, IB= -5mA IC= -100mA , IB= -5mA VCE = -5V, Ic = -2 mA VCB = -10V, IE = 0 f=1MHz VCE = -5V, Ic = -10 mA VCE = -5V, Ic = -0.2 mA f=1KHz, Rs=2K Min -50 -45 -5 Typ Max Unit V V V nA nA V V V pF MHz dB 60 -0.6 200 -0.2 -0.82 -0.65 4.5 190 0.7 -50 -50 600 -0.7 -1.0 -0.75 7.0 100 10 hEF CLASSIFICATION Classification HFE A 60-150 B 100-300 C 200-600 D 400-1000 1-3 2002/01.rev.A PJ2N9015 PNP Epitaxial Silicon Transistor STATIC CHARACTERISTIC BASE-EMITTER VOLTAGE DC CURRENT GAIN CURRENT GAIN-BANDWIDTH PRODUCT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE 2-3 2002/01.rev.A PJ2N9015 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A |
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