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| AP2305AGN Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Small Package Outline Surface Mount Device S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80m - 3.2A Description SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 www..com Parameter Rating - 30 12 -3.2 -2.6 -10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200731031 AP2305AGN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -0.5 - Typ. -0.1 Max. Units 60 80 150 250 -1.2 -1 -25 100 18 1325 V V/ m m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-3.2A VGS=-4.5V, ID=-3.0A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A 9 10 1.8 3.6 7 15 21 15 735 100 80 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=-250uA VDS=-5V, ID=-3.0A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 12V ID=-3.2A VDS=-24V VGS=-4.5V VDS=-15V ID=-3.2A RG=3.3,VGS=-10V RD=4.6 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=-1.2A, VGS=0V IS=-3.2A, VGS=0V, dI/dt=100A/s Min. - Typ. 24 19 Max. Units -1.2 V ns nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. AP2305AGN 40 36 T A =25 C -5.0V -ID , Drain Current (A) 30 o 32 TA=150oC -5.0V -4.0V 28 -ID , Drain Current (A) -4.0V 24 65m -3.0V 20 20 -3.0V 16 12 10 V G = -2.0V 8 V G = -2.0V 4 0 0 1 2 3 4 5 6 7 8 9 0 0 1 2 3 4 5 6 7 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 300 1.8 I D = -1.0A T A =25 o C RDS(ON) (m ) 200 1.6 I D = -3.0A V GS = -4.5V Normalized RDS(ON) 0 2 4 6 8 10 12 1.4 1.2 100 1 0.8 0 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 100 10 1 1 -VGS(th) (V) 0.5 0 -50 T j =150 o C -IS(A) T j =25 o C 0.1 0.01 0 0.4 0.8 1.2 1.6 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2305AGN 12 10000 f=1.0MHz 10 -VGS , Gate to Source Voltage (V) I D = -3.2A V DS = -24V 8 1000 65m Ciss 6 4 C (pF) 100 Coss Crss 2 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 DUTY=0.5 Normalized Thermal Response (Rthja) 0.2 10 0.1 0.1 0.05 -ID (A) 1 1ms PDM t 0.01 T Duty factor = t/T Peak T j = PDM x Rthja + Ta 10ms 0.1 0.01 Single pulse 100ms T A =25 C Single Pulse o Rthja = 270/W 1s DC 10 100 0.01 0.1 1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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