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| SPICE MODEL: MMBT2222A MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) C B B TOP VIEW E C A SOT-23 Dim A B C D E G K J L M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data * * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K1P Ordering & Date Code Information: See Page 4 Weight: 0.008 grams (approximate) E D G H H J K L C M All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Pd RJA Tj, TSTG MMBT2222A 75 40 6.0 600 800 300 417 -55 to +150 Unit V V V mA mA mW C/W C Characteristic Collector Current - Continuous Peak Collector Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30041 Rev. 11 - 2 1 of 4 www.diodes.com MMBT2222A (c) Diodes Incorporated Electrical Characteristics OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Min 75 40 6.0 35 50 75 100 40 50 35 0.6 -- 300 Max 10 10 10 20 300 0.3 1.0 1.2 2.0 8 25 4.0 Unit V V V nA A nA nA nA Test Condition IC = 10A, IE = 0 IC = 10mA, IB = 0 IE = 10A, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100A, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100A, RS = 1.0k, f = 1.0kHz Characteristic (Note 3) DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Note: 3. VCE(SAT) VBE(SAT) V V Cobo Cibo fT NF pF pF MHz dB td tr ts tf 10 25 225 60 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Short duration test pulse used to minimize self-heating effect. DS30041 Rev. 11 - 2 2 of 4 www.diodes.com MMBT2222A 1000 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 hFE, DC CURRENT GAIN TA = 125C 100 TA = -25C TA = +25C 10 VCE = 1.0V 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current 35 VCE, COLLECTOR-EMITTER VOLTAGE (V) f = 1MHz 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 30 CT, CAPACITANCE (pF) 25 20 15 10 5 0 Cobo Cibo 0 2 4 6 8 10 12 14 16 18 20 VR, REVERSE VOLTAGE (V) Fig. 3, Typical Capacitance Characteristics 0.5 IB, BASE CURRENT (mA) Fig. 4, Typical Collector Saturation Region 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) IC IB = 10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50C TA = 25C 0.4 TA = 25C 0.3 TA = 150C 0.2 TA = 150C 0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base-Emitter Voltage vs. Collector Current DS30041 Rev. 11 - 2 3 of 4 www.diodes.com MMBT2222A 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 Ordering Information Device (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel MMBT2222A-7-F Note: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1P K1P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30041 Rev. 11 - 2 4 of 4 www.diodes.com YM MMBT2222A |
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