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Freescale Semiconductor Technical Data
Document Number: MRFE6P3300H Rev. 2, 12/2009
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 32 volt analog or digital television transmitter equipment. * Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain -- 20.4 dB Drain Efficiency -- 44.8% IMD -- -28.8 dBc * Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness Features * Characterized with Series Equivalent Large-Signal Impedance Parameters * Internally Matched for Ease of Use * Designed for Push-Pull Operation Only * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFE6P3300HR3
860 MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET
CASE 375G-04, STYLE 1 NI-860C3
Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value -0.5, +66 -0.5, +12 -65 to +150 150 225 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 300 W CW Case Temperature 82C, 220 W CW Case Temperature 79C, 100 W CW Case Temperature 81C, 60 W CW Symbol RJC 0.23 0.24 0.27 0.27 Value (2,3) Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007-2009. All rights reserved.
MRFE6P3300HR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 3B (Minimum) C (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (4) (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (VDS = 32 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 350 Adc) Gate Quiescent Voltage (3) (VDD = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (4) (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (4) (VDS = 32 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (1) (VDS = 32 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
IDSS IDSS IGSS
-- -- --
-- -- --
10 1 1
Adc Adc Adc
VGS(th) VGS(Q) VDS(on)
1 2 --
2.2 2.8 0.22
3 4 0.3
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
1.22 217 1060
-- -- --
pF pF pF
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP, f1 = 857 MHz, f2 = 863 MHz Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss 1. 2. 3. 4. Each side of the device measured separately. Part internally matched both on input and output. Measurement made with device in push-pull configuration. Drains are tied together internally as this is a total device value. Gps D IMD IRL 19 41 -- -- 20.4 44.8 -28.8 -18.4 23 -- -27 -9 dB % dBc dB
MRFE6P3300HR3 2 RF Device Data Freescale Semiconductor
R1 VBIAS B1 + R3 COAX1 Z4 Z2 RF INPUT Z1 C4 Z3 C5 R2 COAX2 VBIAS + C9 C7 C8 C24 + C19 C20 + C22 C21 B2 Z5 C13 Z20 Z11 COAX4 VSUPPLY C6 Z7 DUT C10 C11 C12 Z6 Z8 C1 C2 C3 Z19 Z10 Z12 Z14 Z16 C14 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY
COAX3
Z9
Z13
Z15
Z17
Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11
0.401 x 0.081 Microstrip 0.563 x 0.101 Microstrip 1.186 x 0.058 Microstrip 0.416 x 0.727 Microstrip 0.191 x 0.507 Microstrip 1.306 x 0.150 Microstrip
Z12, Z13 Z14, Z15 Z16, Z17 Z18 Z19, Z20 PCB
0.225 x 0.507 Microstrip 0.440 x 0.435 Microstrip 0.123 x 0.215 Microstrip 0.401 x 0.081 Microstrip 0.339 x 0.165 Microstrip Arlon CuClad 250GX-0300-55-22, 0.030, r = 2.5
Figure 1. 820-900 MHz Narrowband Test Circuit Schematic
Table 5. 820-900 MHz Narrowband Test Circuit Component Designations and Values
Part B1, B2 C1, C9 C2, C7, C17, C21 C3, C8, C16, C20 C4, C5, C13, C14 C6, C12 C10 C11 C15, C19 C18, C22 C23, C24 Coax1, 2, 3, 4 R1, R2 R3 Description Ferrite Beads, Short 1.0 F, 50 V Tantulum Chip Capacitors 0.1 F, 50 V Chip Capacitors 1000 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 9.1 pF Chip Capacitor 1.8 pF Chip Capacitor 47 F, 50 V Electrolytic Capacitors 470 F, 63 V Electrolytic Capacitors 22 pF Chip Capacitors 50 , Semi Rigid Coax, 2.06 Long 10 , 1/4 W Chip Resistors 1 k, 1/4 W Chip Resistor Part Number 2743019447 T491C105K050AT CDR33BX104AKYS ATC100B102JT50XT ATC100B101JT500XT ATC100B8R2JT500XT ATC100B9R1BT500XT ATC100B1R8BT500XT EMVY500ADA470MF80G ESME630ELL471MK25S ATC100B220FT500XT UT-141A-TP CRCW120610R0FKEA CRCW12061001FKEA Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi-Con ATC Micro-Coax Vishay Vishay Manufacturer Fair-Rite
MRFE6P3300HR3 RF Device Data Freescale Semiconductor 3
C1 C23 VGG R3 C2 C3 R1 B1
C15
C18
VDD C16 C17
COAX1
COAX3
MRF6P9220, Rev. 2
C4 CUT OUT AREA
C14 C12
C5
C6
C10 C11
C13
COAX2
COAX4
R2 VGG C7 C8 B2 C24
C20 VDD
C21
C22 C9 C19
Figure 2. 820-900 MHz Narrowband Test Circuit Component Layout
MRFE6P3300HR3 4 RF Device Data Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
21 20.5 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5 ACP-L ACP-U 840 850 IRL 860 870 880 890 -65 900 -20 VDD = 32 Vdc, Pout = 60 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols Gps 25 -45 ACPR (dBc) -50 -55 -60 D, DRAIN EFFICIENCY (%) 0 -5 -10 -15 D, DRAIN EFFICIENCY (%) 0 ACPR (dBc) -5 -10 -15 -20 IDQ = 800 mA 1200 mA IRL, INPUT RETURN LOSS (dB) 2400 mA 2000 mA 1600 mA -6 0 1 10 100 600 1 10 100 600 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) D 31 29 27
17 820
830
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance @ 60 Watts Avg.
20.5 20 19.5 Gps, POWER GAIN (dB) 19 18.5 18 17.5 17 16.5 820 830 840 850 860 870 880 890 f, FREQUENCY (MHz) IRL Gps VDD = 32 Vdc, Pout = 120 W (Avg.) IDQ = 1600 mA, 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols ACP-U ACP-L D 44 42 40 38 -40 -45 -50 -55 -60 900
Figure 4. Single-Carrier OFDM Broadband Performance @ 120 Watts Avg.
21 IDQ = 2400 mA 20 Gps, POWER GAIN (dB) 2000 mA 19 1600 mA 1200 mA 18 800 mA 17 VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing 16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-1 0
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing
-2 0
-3 0
-4 0
-5 0
Figure 5. Two-T one Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRFE6P3300HR3 RF Device Data Freescale Semiconductor 5
TYPICAL NARROWBAND CHARACTERISTICS
-1 0 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -2 0 -3 0 -4 0 5th Order -5 0 -6 0 -70 1 7th Order 10 100 600 3rd Order VDD = 32 Vdc, IDQ = 1600 mA f1 = 857 MHz, f2 = 863 MHz Two-Tone Measurements, 6 MHz Tone Spacing -1 0 -2 0 -3 0 -4 0 -5 0 -6 0 -70 1 10 TWO-T ONE SPACING (MHz) 80 VDD = 32 Vdc, Pout = 150 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 860 MHz IM3-L IM3-U IM5-U IM5-L IM7-U IM7-L
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products versus Output Power
63 62 Pout, OUTPUT POWER (dBm) 61 60 59 58 57 56 55 54 53 32 33 34 35 P1dB = 55.15 dBm (327.9 W) P3dB = 55.9 dBm (388.37 W)
Figure 8. Intermodulation Distortion Products versus Tone Spacing
P6dB = 56.28 dBm (424.38 W)
Ideal
Actual VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 12 sec(on), 1% Duty Cycle f = 860 MHz 36 37 38 39 40 41 42
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus Input Power
45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 200 ACP-L ACP-U 85_C -30 _C TC = -30_C 25_C Gps VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz 8K Mode OFDM, 64 QAM Data Carrier Modulation, 5 Symbols D 85_C -25 -30 25_C 85_C 25_C -35 -40 -45 -50 -55 -60 -65 -70 ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
-30 _C
Figure 10. Single-Carrier DVBT OFDM ACPR, Power Gain and Drain Efficiency versus Output Power
MRFE6P3300HR3 6 RF Device Data Freescale Semiconductor
TYPICAL NARROWBAND CHARACTERISTICS
22 21 Gps, POWER GAIN (dB) 20 19 18 17 16 15 1 10 100 Pout, OUTPUT POWER (WATTS) CW D TC = -30 _C 25_C 85_C Gps 25_C 85_C 40 30 20 VDD = 32 Vdc IDQ = 1600 mA f = 860 MHz 10 0 800 16 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) CW -30 _C 70 60 Gps, POWER GAIN (dB) 50 D, DRAIN EFFICIENCY (%) 20 21
19
18
17
IDQ = 1600 mA f = 860 MHz
VDD = 28 V
32 V 30 V
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
107
Figure 12. Power Gain versus Output Power
MTTF (HOURS)
106
105
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 32 Vdc, Pout = 270 W PEP, and D = 44.8%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 13. MTTF versus Junction Temperature
MRFE6P3300HR3 RF Device Data Freescale Semiconductor 7
DIGITAL TEST SIGNALS
100 -2 0 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 12 PEAK-T O-A VERAGE (dB) 8K Mode DVTB OFDM 64 QAM Data Carrier Modulation 5 Symbols -3 0 -4 0 -5 0 -6 0 -7 0 -8 0 -9 0 -1 00 -110 -5 -4 -3 -2 -1 0 1 2 3 4 5 f, FREQUENCY (MHz) 20 kHz BW 20 kHz BW ACPR Measured at 3.9 MHz Offset from Center Frequency 7.61 MHz
Figure 14. Single-Carrier DVTB OFDM
Figure 15. 8K Mode DVBT OFDM Spectrum
MRFE6P3300HR3 8 RF Device Data Freescale Semiconductor
f = 890 MHz
Zload f = 830 MHz Zo = 10 f = 890 MHz
Zsource
f = 830 MHz
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP f MHz 830 845 860 875 890 Zsource 4.52 - j6.73 4.22 - j6.38 3.89 - j5.81 3.54 - j5.10 3.39 - j4.32 Zload 4.89 - j1.35 5.06 - j1.01 5.18 - j0.58 5.27 - j0.11 5.36 + j0.43
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 16. 820-900 MHz Narrowband Series Equivalent Source and Load Impedance
MRFE6P3300HR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
G L ccc R
M
4
2X
TA
M
B
M
Q bbb
M
TA
M
B
M
J
1 2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. DIM A B C D E F G H J K L M N Q R S bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF
(LID)
B
5 4X
(FLANGE)
K
4X
3
4
S
(INSULATOR) M
B D bbb
M M
bbb
TA
B
M
TA
M
B
M
ccc
M
TA N
(LID)
M
B
M
F
E
H bbb A
M
M
(INSULATOR)
C B
M
T
TA A
M
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375G-04 ISSUE G NI-860C3
MRFE6P3300HR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date May 2007 Dec. 2008 * Initial Release of Data Sheet * Table 4, Dynamic Characteristics, corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, corrected Typ value from 106 to 1060 pF, p. 2 * Fig. 1, Test Circuit Schematic, Z-list, changed Z4, Z5 from 1.013 x 0.058 Microstrip to 1.186 x 0.058 Microstrip; Z10, Z11 from 1.054 x 0.150 Microstrip to 1.306 x 0.150 Microstrip; and Z19, Z20 from 0.165 x 0.339 Microstrip to 0.339 x 0.165 Microstrip; also separated Z1 and Z18 into two lines in Z-list, p. 3 * Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 * Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 2 Dec. 2009 * Data sheet revised to reflect part status change, removing MRFE6P3300HR5. Refer to PCN13420. (See Rev. 1 data sheet for MRFE6P3300HR5.) Description
MRFE6P3300HR3 RF Device Data Freescale Semiconductor 11
How to Reach Us:
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MRFE6P3300HR3
Document Number: MRFE6P3300H Rev. 12 2, 12/2009
RF Device Data Freescale Semiconductor

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